SiSH112DN
www.vishay.com Vishay Siliconix
S18-0706-Rev. A, 16-Jul-2018 1Document Number: 79345
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) Fast Switching MOSFET
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
•Load switch
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package
family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at
the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
VDS (V) 30
RDS(on) max. () at VGS = 10 V 0.0075
RDS(on) max. () at VGS = 4.5 V 0.0082
Qg typ. (nC) 18
ID (A) 17.8
Configuration Single
PowerPAK® 1212-8SH
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Top View
1
3.3 mm
3.3 mm
0.9 mm
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiSH112DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 S STEADY
STATE UNIT
Drain-source voltage VDS 30 30 V
Gate-source voltage VGS ±12 ±12
Continuous drain current (TJ = 150 °C) a TC = 25 °C ID
17.8 11.3
A
TC = 70 °C 14.2 9.1
Pulsed drain current IDM 60 60
Continuous source current (diode conduction) a IS3.2 1.3
Single avalanche current L = 0.1 mH IAS 20 20
Single avalanche energy EAS 20 20 mJ
Maximum power dissipation a TC = 25 °C PD
3.8 1.5 W
TC = 70 °C 2 0.8
Operating junction and storage temperature range TJ, Tstg -50 to +150 °C
Soldering recommendations (peak temperature) b, c 260
SiSH112DN
www.vishay.com Vishay Siliconix
S18-0706-Rev. A, 16-Jul-2018 2Document Number: 79345
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. Surface mounted on 1" x 1" FR4 board
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient a t 10 s RthJA
24 33
°C/WSteady state 65 81
Maximum junction-to-foot (drain) Steady state RthJC 1.9 2.4
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V
Gate-body leakage IGSS VDS = 0 V, VGS = ±12 V - - ±100 nA
Zero gate voltage drain current IDSS
VDS = 30 V, VGS = 0 V - - 1 μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5
On-state drain current a ID(on) VDS 5 V, VGS = 10 V 40 - - A
Drain-source on-state resistance a RDS(on)
VGS = 10 V, ID = 17.8 A - 0.0060 0.0075
VGS = 4.5 V, ID = 17 A - 0.0065 0.0082
Forward transconductance a gfs VDS = 15 V, ID = 17.8 A - 97 - S
Diode forward voltage a VSD IS = 3.2 A, VGS = 0 - 0.7 1.2 V
Dynamic b
Input capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
- 2610 -
pFOutput capacitance Coss - 340 -
Reverse transfer capacitance Crss - 145 -
Total gate charge Qg
VDS = 15 V, VGS = 4.5 V, ID = 17.8 A
-1827
nCGate-source charge Qgs -6.2-
Gate-drain charge Qgd -3.1-
Gate resistance Rgf = 1 MHz 0.5 1.2 1.8
Turn-on delay time td(on)
VDD = 15 V, RL = 15
ID 1 A, VGEN = 10 V, Rg = 6
-1015
ns
Rise time tr-1015
Turn-off delay time td(off) - 65 100
Fall time tf-1015
Body diode reverse recovery time trr IF = 3.2 A, di/dt = 100 A/μs -3060
Body diode reverse recovery charge Qrr -18-nC
SiSH112DN
www.vishay.com Vishay Siliconix
S18-0706-Rev. A, 16-Jul-2018 3Document Number: 79345
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
12
24
36
48
60
012345
VGS = 10 V thru 3 V
2.5 V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
0.000
0.003
0.006
0.009
0.012
015304560
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 1020304050
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 15 V
I
D
= 18.9 A
0
12
24
36
48
60
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
500
1000
1500
2000
2500
3000
3500
06121824 30
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V
ID = 17.8 A
TJ - Junction Temperature (°C)
RDS(on) - On-Resistance (Normalized)
SiSH112DN
www.vishay.com Vishay Siliconix
S18-0706-Rev. A, 16-Jul-2018 4Document Number: 79345
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
VSD - Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 25 °C
60
10
1
- Source Current (A)IS
TJ = 150 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
0
0.01
0.02
0.03
0.04
0.05
0246810
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
ID = 18.9 A
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
100
1
0.1 1 10 100
0.01
10
T
C
= 25 °C
Single Pulse
- Drain Current (A)I
D
P(t) = 10
DC
0.1
I
DM
Limited
I
D(on)
Limited
Limited by R
DS(on)
*
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is
specified
>
SiSH112DN
www.vishay.com Vishay Siliconix
S18-0706-Rev. A, 16-Jul-2018 5Document Number: 79345
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79345.
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Package Information
www.vishay.com Vishay Siliconix
Revision: 15-Jan-18 1Document Number: 76384
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® 1212-SWLH
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.82 0.90 0.98 0.032 0.035 0.038
A1 0 - 0.05 0 - 0.002
A3 0.20 ref. 0.008 ref.
b 0.30 BSC 0.012 BSC
D 3.30 BSC 0.130 BSC
D1 2.15 2.25 2.35 0.084 0.088 0.092
E 3.30 BSC 0.130 BSC
E1 1.60 1.70 1.80 0.063 0.067 0.071
e 0.65 BSC 0.026 BSC
K 0.76 typ. 0.030 typ.
K1 0.41 typ. 0.016 typ.
L 0.43 BSC 0.017 BSC
Z 0.525 typ. 0.021 typ.
ECN: C18-0001-Rev. A, 15-Jan-18
DWG: 6062
Backside view
1234
5678
1
2
3
4
5678
D
E
D1
E1 K1
Z
L
b
K
e
A3
A1
A
C
0.08 C
0.10 C
0.10 C
2x
0.10 C
2x
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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