2007-12-14
Rev. 2.6 Page 1
SPB11N60C3
Cool MOS™ Power Transistor VDS @ T
j
max 650 V
RDS
(
on
)
0.38 Ω
ID11 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• High peak current capability
• Improved transconductance
PG-TO263
Marking
11N60C3
Type Package Ordering Code
SPB11N60C3 PG-TO263 Q67040-S4396
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
A
Pulsed drain current, t
p
limited by T
j
max ID
p
uls 33 A
Avalanche energy, single pulse
ID=5.5A, VDD=50V
EAS 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
EAR 0.6
Avalanche current, repetitive t
A
R limited by T
j
max I
A
R11 A
Gate source voltage static VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 125 W
SPB
Operating and storage temperature T
j
,Tst
g
-55...+150 °C
Reverse diode dv/dt dv/dt 15 V/ns
7)
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2007-12-14
Rev. 2.6 Page 2
SPB11N60C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
dv/dt50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
- -
Thermal resistance, junction - ambient, leaded RthJA - - 62
- -
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
35
62
-
Soldering temperature, reflow soldering, MSL1
1.6 mm (0.063 in.) from case for 10s
Tsold - - 260 °C
Electrical Characteristics, at T
=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=11A - 700 -
Gate threshold voltage VGS
(
th
)
ID=500µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.1
-
1
100
µA
Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=7A
Tj=25°C
Tj=150°C
-
-
0.34
0.92
0.38
-
Ω
Gate input resistance RGf=1MHz, open drain - 0.86 -
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2007-12-14
Rev. 2.6 Page 3
SPB11N60C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=7A
- 8.3 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1200 - pF
Output capacitance Coss - 390 -
Reverse transfer capacitance Crss - 30 -
Effective output capacitance,5)
energy related
Co(er) VGS=0V,
VDS=0V to 480V
- 45 -
Effective output capacitance,6)
time related
Co(tr) - 85 -
Turn-on delay time td(on) VDD=380V, VGS=0/10V,
ID=11A,
RG=6.8Ω
- 10 - ns
Rise time tr- 5 -
Turn-off delay time td(off) - 44 70
Fall time tf- 5 9
Gate Charge Characteristics
Gate to source charge Qgs VDD=480V, ID=11A - 5.5 - nC
Gate to drain charge Qgd - 22 -
Gate charge total QgVDD=480V, ID=11A,
VGS=0 to 10V
- 45 60
Gate plateau voltage V
(
plateau
)
VDD=480V, ID=11A - 5.5 - V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
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2007-12-14
Rev. 2.6 Page 4
SPB11N60C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 11 A
Inverse diode direct current,
pulsed ISM - - 33
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=480V, IF=IS ,
diF/dt=100A/µs
- 400 600 ns
Reverse recovery charge Qrr - 6 - µC
Peak reverse recovery current Irrm - 41 - A
Peak rate of fall of reverse
recovery current
dirr/dt Tj=25°C - 1200 - A/µs
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
Rth1 0.015 K/W Cth1 0.0001878 Ws/K
Rth2 0.03 Cth2 0.0007106
Rth3 0.056 Cth3 0.000988
Rth4 0.197 Cth4 0.002791
Rth5 0.216 Cth5 0.007285
Rth6 0.083 Cth6 0.063
SPB SPB
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
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2007-12-14
Rev. 2.6 Page 5
SPB11N60C3
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
SPP11N60C3
Ptot
2 Power dissipation FullPAK
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
5
10
15
20
25
W
35
Ptot
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
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2007-12-14
Rev. 2.6 Page 6
SPB11N60C3
5 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
ZthJC = f(tp)
parameter: D = tp/t
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 3 6 9 12 15 18 21 V27
VDS
0
4
8
12
16
20
24
28
32
A
40
ID
4,5V
5V
5,5V
6V
6,5V
7V
20V
10V
8V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
2
4
6
8
10
12
14
16
18
A
22
ID
4V
4.5V
5V
5.5V
6V
20V
8V
7V
7.5V
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2007-12-14
Rev. 2.6 Page 7
SPB11N60C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 2 4 6 8 10 12 14 16 A 20
ID
0.4
0.6
0.8
1
1.2
1.4
1.6
Ω
2
RDS(on)
4V 4.5V 5V 5.5V 6V
6.5V
8V
20V
10 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 7 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Ω
2.1 SPP11N60C3
RDS(on)
typ
98%
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 2 4 6 8 10 12 V 15
VGS
0
4
8
12
16
20
24
28
32
A
40
ID
25°C
150°C
12 Typ. gate charge
VGS =f (QGate)
parameter: ID = 11 A pulsed
0 10 20 30 40 50 nC 70
QGate
0
2
4
6
8
10
12
V
16 SPP11N60C3
VGS
0,8 VDS max
DS max
V
0,2
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2007-12-14
Rev. 2.6 Page 8
SPB11N60C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: T
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPP11N60C3
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
14 Typ. switching time
t = f(ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
02468 A 12
ID
0
5
10
15
20
25
30
35
40
45
50
55
60
ns
70
t
tr
td(off)
td(on)
tf
15 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11 A
0 10 20 30 40 50 Ω70
RG
0
50
100
150
200
250
ns
350
t
td(off)
td(on)
tr
tf
16 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 20 40 60 80 Ω120
RG
0
500
1000
1500
2000
A/µs
3000
di/dt
di/dt(on)
di/dt(off)
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2007-12-14
Rev. 2.6 Page 9
SPB11N60C3
17 Typ. drain source voltage slope
dv/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 10 20 30 40 50 Ω70
RG
10
20
30
40
50
60
70
80
90
100
110
120
V/ns
140
dv/dt
dv/dt(off)
dv/dt(on)
18 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
02468 A 12
ID
0
0.005
0.01
0.015
0.02
0.025
0.03
mWs
0.04
E
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
19 Typ. switching losses
E = f(RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 10 20 30 40 50 Ω70
RG
0
0.04
0.08
0.12
0.16
mWs
0.24
E
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
20 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
1
2
3
4
5
6
7
8
9
A
11
IAR
Tj(START)=125°C
Tj(START)=25°C
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2007-12-14
Rev. 2.6 Page 10
SPB11N60C3
21 Avalanche energy
EAS = f(Tj)
par.: ID = 5.5 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
50
100
150
200
250
mJ
350
EAS
23 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
10 410 510 6
Hz
f
0
50
100
150
200
W
300
PAR
22 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
SPP11N60C3
V(BR)DSS
24 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
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2007-12-14
Rev. 2.6 Page 11
SPB11N60C3
25 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
µJ
7.5
Eoss
Definition of diodes switching characteristics
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2007-12-14
Rev. 2.6 Page 12
SPB11N60C3
PG-TO263
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2007-12-14
Rev. 2.6 Page 13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
SPB11N60C3
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