D44H5 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  



. . . for general purpose power amplification and switching such as output or driver

stages in applications such as switching regulators, converters and power amplifiers.

•Low Collector–Emitter Saturation Voltage

VCE(sat) = 1.0 V (Max) @ 8.0 A

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

D44H or D45H

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎÎ

ÎÎÎÎ

10, 11

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

@ TA = 25

ÎÎÎ

ÎÎÎÎÎÎÎÎ

1.67

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–55 to 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎ

2.5

ÎÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

ÎÎÎÎÎ

275

ÎÎÎÎÎ

(1) Pulse Width

6.0 ms, Duty Cycle

50%.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TJ = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(VCE = 1.0 Vdc, IC = 2.0 Adc)

ÎÎÎÎÎÎ

D44H10

D45H10

ÎÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

D44H8,11

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCE = 1.0 Vdc, IC = 4.0 Adc)

ÎÎÎÎÎÎ

D44H10

D45H10

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

D44H8,11

D45H8,11

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by D44H/D

 Motorola, Inc. 1995

 

 

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 80 VOLTS

*Motorola Preferred Device









CASE 221A–06

TO–220AB

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5.0 Vdc)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.4 Adc) D44H/D45H8,11

(IC = 8.0 Adc, IB = 0.8 Adc) D44H/D45H10

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.8 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Capacitance

(VCB = 10 Vdc, ftest = 1.0 MHz) D44H Series

D45H Series

ÎÎÎÎ

Ccb

ÎÎÎÎ

—

ÎÎÎÎ

130

230

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series

D45H Series

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING TIMES

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Delay and Rise Times

(IC = 5.0 Adc, IB1 = 0.5 Adc) D44H Series

D45H Series

ÎÎÎÎ

td + tr

ÎÎÎÎ

—

ÎÎÎÎ

300

135

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) D44H Series

D45H Series

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series

D45H Series

ÎÎÎÎ

—

ÎÎÎÎ

140

100

ÎÎÎÎ

—

ÎÎÎ

100

1.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0 10

≤

DUTY CYCLE

≤

50%

IC, COLLECTOR CURRENT (AMPS)

2.0 3.0 20 30 50 100

1.0

7.0

D44H/45H8

D44H/45H10,11

Figure 1. Maximum Rated Forward Bias

Safe Operating Area

1.0

0.1

0.2

0.3

0.5

2.0

3.0

5.0

100

1.0 ms

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

   

4 Motorola Bipolar Power Transistor Device Data

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D44H/D

*D44H/D*

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