LITE-ON SEMICONDUCTOR MBRF1060CT REVERSE VOLTAGE - 60 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES M B K D PIN 1 2 3 A B C 15.50 10.0 3.00 16.50 10.40 3.50 D E 9.00 2.90 13.46 9.30 3.60 14.22 1.70 F J F G I MECHANICAL DATA H Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.7 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) ITO-220AB MIN. MAX. A C DIM. E Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications N H L PIN 1 PIN 2 PIN 3 G H I J K 1.15 2.40 0.75 2.70 1.00 0.45 0.70 3.00 3.30 L 4.36 4.77 M 2.48 2.80 2.80 N 2.50 All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL MBRF1060CT UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward RectifiedCurrent at TC=120 C (See Fig.1) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load VRRM VRMS VDC 60 42 60 V V V I(AV) 10 A IFSM 125 A Voltage Rate of Change (Rated VR) dv/dt 10000 V/us VF 0.65 0.80 0.90 V IR 0.1 15 mA CJ 220 pF R0JC TSTG 4.0 -55 to +150 -55 to +175 C/W C C Vdis 2000 V CHARACTERISTICS Maximum Forward Voltage, (Note 1) @IF=5A TJ =125 C @IF=5A TJ =25 C @IF=10A TJ =125 C Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =125 C Typical Junction Capacitance, per element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Dielectric Strengh from terminals to case, AC with t=1 minute, RH<30% TJ NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. REV. 2, Aug-2007, KTHC50 RATING AND CHARACTERISTIC CURVES MBRF1060CT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 16 12 8 4 RESISTIVE OR INDUCTIVE LOAD 0 50 25 75 100 125 150 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave 0 1 175 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 10000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 1000 100 10 TJ = 25 C 1 10 1 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0 0 20 40 60 80 100 0.1 120 0.0 0.2 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.6 0.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(uA) 20 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0