TO-220 Plastic-Encapsulated Transistors
3DD13007 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 2 W (Tamb=25℃)
Collector current
ICM: 8 A
Collector-base voltage
V(BR)CBO: 700 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1mA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V
E mitter-base break dow n volt age V(BR)EBO I
E= 1mA, IC=0 9 V
Collector cut-off current ICBO V
CB= 700V, IE=0 1 mA
Emi tter cut -o ff curr e n t IEBO V
EB=9V, IC=0 100 µA
hFE(1) V
CE= 5V, I C= 2 A 8 40
DC current gain hFE(2) V
CE=5 V, IC=5A 5 30
Collector-emitter saturation vol tage VCE(sat) IC=2A,IB=0.4A 1 V
Base-emitter satu ration voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V
Transition fre quency fT Ic=500mA,VCE=10V
f=1MHZ 4 MHZ
Collector output capacitance Cob VCE=10,IE=0, f=0.1MHz 80 pF
Fall time tf 0.7 µs
Storage time ts
Vcc=125V, Ic=5A
IB1=-IB2=1A 3 µs
CLASSIFICATION OF hFE(1)
Rank
Range 8-15 15-20 20-25 25-30 30-35 35-40
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
Transys
Electronics
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