TOSHIBA
TOSHIBA CORPORATION
MW50230196 1/4
MICROWAVE POWER GaAs FET
TIM1213-4L
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
Features
• Low intermodulation distortion
-IM
3
= -45 dBc at Po = 25 dBm,
- Single carrier level
• High power
-P
1dB
= 36.5 dBm at 12.7 GHz to 13.2 GHz
• High gain
-G
1dB
= 7.5 dB at 12.7 GHz to 13.2 GHz
• Broad band internally matched
• Hermetically sealed package
RF Performance Specifications (Ta = 25
°
C)
Note 1: 2 Tone Test (Pout = 25 dBm Single Carrier Level).
Electrical Characteristics (Ta = 25
°
C)
Characteristics Symbol Condition Unit Min. Typ. Max
Output Power at 1dB
Compression Point P
1dB
V
DS
= 9V
f = 12.7 ~ 13.2 GHz
dBm 35.5 36.5 –
Power Gain at 1dB
Compression Point G
1dB
dB 6.5 7.5 –
Drain Current I
DS1
A – 1.7 2.2
Gain Flatness
∆
GdB––
±
0.8
Power Added Efficiency
η
add
% – 24 –
3rd Order Intermodulation Distortion IM
3
Note 1 dBc -42 -45 –
Drain Current I
DS2
A – 1.7 2.2
Channel-Temperature Rise
∆
T
ch
V
DS
xI
DS
xR
th(c-c)
°
C– –70
Characteristic Symbol Condition Unit Min. Typ. Max
Trans-conductance gm V
DS
= 3V
I
DS
= 2.0A mS – 1200 –
Pinch-off Voltage V
GSoff
V
DS
= 3V
I
DS
= 60mA V -2 -3.5 -5
Saturated Drain Current I
DSS
V
DS
= 3V
V
GS
= 0V A – 4.0 5.2
Gate-Source Breakdown Voltage V
GSO
I
GS
= -60
µ
AV -5 – –
Thermal Resistance R
th (c-c)
Channel
to case
°
C/W – 2.9 3.5
2/4 MW50230196
TOSHIBA CORPORATION
TIM1213-4L
Absolute Maximum Ratings (Ta = 25
°
C)
Package Outline (2-9D1A)
Handling Precautions for Packaged Type
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260
°
C.
Characteristic Symbol Unit Rating
Drain-Source Voltage V
DS
V15
Gate-Source Voltage V
GS
V-5
Drain Current I
DS
A 5.2
Total Power Dissipation (T
c
= 25
°
C) P
T
W30
Channel Temperature T
ch
˚
C 175
Storage Temperature T
stg
˚
C -65~175
TOSHIBA CORPORATION
MW50230196 3/4
TIM1213-4L
RF Performances
4/4 MW50230196
TOSHIBA CORPORATION
TIM1213-4L
Power Dissipation vs. Case Temperature
IM
3
vs. Output Power Characteristics
