SAMSUNG SEMICONDUCTOR. INC nye 0 BP zaeun42 oonz4ay-4 i KSA1142 . PNP EPITAXIAL SILICON. TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER vr 3 3-7 HIGH FREQUENCY POWER AMPLIFIER * Complement to KSC2682 T0-126 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit .Collector-Base Voltage Veso - =180 Vv Collector-Emitter Voltage Vceo" -180 Vv Emitter-Base Voltage Veno ~5 Vv Collector Current le -100 mA Collector Dissipation (T, a=25C) Py _ 1.2 WwW Collector Dissipation (T-=25C) | Pe 8 Ww Junction Temperature TT. 150 c Storage Temperature Tstg S51 50 C 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic | Symbol Test Condition | Min Typ | Max Unit Collector Cutoff Current loao Vea=- 180V, =O . -1 pA Emitter Cutoff Current. feso Ves=3V, l-=0 ~1 pA * DCG Current Gain. Hee Vce=68V, Ic=1mA 90 200 : Neo Vece=-5V, lb=10mA 400 200 320 Collector, Emitter Saturation Voltage Voce (sat) | lc=S5OmMA, la=~SmA -0.16 -0.5 Vv *Base Emitter Saturation Voltage Vee (sat) | b= SOmvV, b=5mA 7 -0.8 -1.5 Vv Current Gain, Bandwidth. Product fr Vee=-10V, l= ~20mA 180 MHz Output Capacitance Cob Vca=10V, k=O 4.5 7 pF - f=1MHz ; Noise Figure NF Vce=10V, le=1mA 4 dB : : Rs=10kQ, f= 1kHz . * Pulse. Tst: PW<350p8, Duty Cycles2% Pulsed hre(2) CLASSIFICATION - Classification - Oo Y hre(2) 100-200 ~ 160-320 cee SAMSUNG SEMICONDUCTOR 89SAMSUNG SEMICONDUCTOR INC: nue o BP eseunye coovuas o ff KSA17142 PNP EPITAXIAL SILICON TRANSISTOR - T-33-17 2 STATIC CHARACTERISTIC DC CURRENT GAIN Puss Test i 8 z a = so 3 8 z igf mA), COLLECTOR CURRENT -100 -120 -140 -160 Te = = 49-60-80 VedtV), COLLECTOR-EMITTER VOLTAGE tomA}, COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE ao k= a Test DERATING CURVE OF SAFE OPERATING AREAS 160 g 5 140 << a) o $ 120 3 -4 9 E Z 100 e E PR -0s = < uo %-03 2 # = = - 3 = E 60 w -01 3 ~0.05 40 > -0.03 : 20 -0.01 01 -03~05 -1 3 - -10 -30 -80 -100 0 i) 100 150 200 ke{maA), COLLECTOR CURRENT Te{*C), CASE TEMPERATURE POWER DERATING . SAFE OPERATING AREA ima), COLLECTOR CURRENT Po(W), POWER DISSIPATION -5 ~-10 -W-50-100 TetC), CASE TEMPERATURE Vce(}, COLLECTOR-EMITTER VOLTAGE oH SAMSUNG SEMICONDUCTOR 70SAMSUNG SEMICONDUCTOR INC. 4 0 J 2aG4342 oOOZUaE 2 i KSA1142 Oo PNP EPITAXIAL SILICON TRANSISTOR 3 T-33-17 __ OUTPUT AND INPUT CAPACITANCE va REVERSE VOLTAGE CURRENT GAIN BANDWIDTH PRODUCT Cod (pF) Clb (pF), CAPACITANCE FiMiz}, CURRENT GAIN BANDWIDTH PRODUCT * 1 - - - ft 3 -& ~10 50 =100 Veai}, COLLECTOR-BASE VOLTAGE Val), EMITTER-BASE VOLTAGE k{mA), COLLECTOR CURRENT Hl ck SAMSUNG SEMICONDUCTOR . aSAMSUNG SEMICONDUCTOR INC sae o ff 2an4i42 ooozua? 4 &f KSA1220/1220A PNP EXITAXIAL SILICON TRANSISTOR | | 7> 33-09 AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER * Complement to KSC2690/KSC2690A TO-128 ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol| Rating | Unit Collector-Base Voltage : KSA1220 Vcao -120 Vv : KSA1220A 160 Vv Collector-Emitter Voltage : KSA1220 Vero ~120 Vv . > KSA1220A -160 Vv Emitter-Base Voltage Vewo Nn Vv Collector Current (DC) . lo -1.2 | A *Collector Current (Pulse) - - le 2.5 A 1. Emitter 2. Collector 3. Base Base Current ls ~0.3 A Collector Dissipation (T,=25C) Po 1.2 Ww Colfector Dissipation (T.=25C)- - [Pr 20 Ww Junction Temperature. Tj 150 C Storage Temperature . Tstg 55~150} C : * * PWs10ms, Duty Cycle <50% ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symboi Test Condition Min Typ Max Unit Collector Cutoff Current : leeo | Vep=120V, ie=0 -1 pA Emitter Cutoff Current | Teo Vis=3V, lc=0 -1 BA *DC Current Gain Nees Vce=5V, lb=~5mA 35 150 . Nreo. Vce=5V, lc=-0,3A 60 140 320 _ |*Collector Emitter Saturation Voltage Vce (sat) | lce=-1A, fp=0.2A -0.4 -0.7 Vv -{*Base Emitter Saturation Voltage Vee (sat) | b=-1A, l= -0.2A -1 -1.3 Vv Current Gain Bandwidth Product fr - Voe=5V, le=~-0.2A 175 MHz Output.Capacitance Cob Vea=10V, 1:=0 26 pF . f=1MHz * Pulse Test: PW<350ys, Duty Cyle<2% Pulsed hr (2) CLASSIFICATION Classification R oO Y Nre(2) 60-120 100-200 . 160-320 che SAMSUNG SEMICONDUCTOR : 72KSA1220/1220A SAMSUNG SEMICONDUCTOR INC PNP EXITAXIAL SILICON TRANSISTOR T-33- \4 DC CURRENT GAIN + STATIC CHARACTERISTIC Lf) 7 1 Le enama | i 2 a f 8 bE p-9ma a 4A s | annem fy me DTA, Z lt 02 te Le a 16280 nap a 30 -60 VoetV), COLLECTOREMITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE . COLLECTOREMITTER SATURATION Vec{sat), Vca(aat] (V), SATURATION VOLTAGE OO itd), COLLECTOR CURRENT 0.05 0.1 0.30.5 1 3.5 10 POWER DERATING PolW), POWER DISSIPATION 50 100 150 200 250 To{*C), CASE TEMPERATURE LYE D Bf escu.42 oooz498 ae | hee, DC CURRENT GAIN 3 t 0.001 0.003 0.01 0.060.1 0305 1 35 to L(A), COLLECTOR CURRENT DERATING CURVE OF SAFE OPERATING AREAS 8 8 T(%) l; DERATING 8 40 20 o 50 100. 150 200 Tel?C), CASE TEMPERATURE SAFE OPERATING AREA kiA), COLLECTOR CURRENT , Veen | 4 0.01 1 3665 10 30 100 300500 1000 Vee(V}, COLLECTOR-EMITTER VOLTAGE cs SAMSUNG SEMICONDUCTOR 73SAMSUNG SEMICONDUCTOR INC. 14E O i ?Fb4R4e OOO7499 4 i KSA1220/1220A PNP EXITAXIAL SILICON TRANSISTOR ' T- 33- (97 COLLECTOR OUTPUT CAPACITANCE * GURRENT GAIN-BANDWIDTH PRODUCT : i 1 3 85 = i0 30 60 100 300500 9000 : Veat), COLLECTOR-BASE: VOLTAGE , . [{A}, COLLECTOR CURRENT . eke SAMSUNG SEMICONDUCTOR - 74