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S
O
T
8
9
PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
9 December 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115X.
2. Features and benefits
•High voltage
•Low collector-emitter saturation voltage VCEsat
•High collector current capability IC and ICM
•High collector current gain (hFE) at high IC
•AEC-Q101 qualified
•Medium power SMD plastic package
3. Applications
•LED driver for LED chain module
•LCD backlighting
•High Intensity Discharge (HID) front lighting
•Automotive motor management
•Hook switch for wired telecom
•Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter
voltage
open base - - 150 V
ICcollector current - - 1 A
hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 °C 100 250 -
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 2 / 14
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E emitter
2 C collector
3 B base
3 2 1
SOT89
sym042
1
2
3
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBHV8115X SOT89 plastic surface-mounted package; die pad for good heat transfer;
3 leads
SOT89
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PBHV8115X %4F
[1] % = placeholder for manufacturing site code
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 3 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 400 V
VCEO collector-emitter voltage open base - 150 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 1 A
ICM peak collector current - 2 A
IBM peak base current
single pulse; tp ≤ 1 ms
- 400 mA
[1] - 0.52 WPtot total power dissipation Tamb ≤ 25 °C
[2] - 1.5 W
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
Tamb (°C)
- 75 17512525 75- 25
006aab846
0.8
1.2
0.4
1.6
2.0
Ptot
(W)
0.0
(2)
(1)
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 4 / 14
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 240 K/WRth(j-a) thermal resistance
from junction to
ambient
in free air
[2] - - 83 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aab847
10
1
102
103
Zth(j-a)
(K/W)
10- 1
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab848
10
1
102
103
Zth(j-a)
(K/W)
10- 1
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 5 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB = 120 V; IE = 0 A; Tamb = 25 °C - - 100 nAICBO collector-base cut-off
current VCB = 120 V; IE = 0 A; Tj = 150 °C - - 10 µA
ICES collector-emitter cut-off
current
VCE = 120 V; VBE = 0 V; Tamb = 25 °C - - 100 nA
IEBO emitter-base cut-off
current
VEB = 4 V; IC = 0 A; Tamb = 25 °C - - 100 nA
VCE = 10 V; IC = 50 mA; Tamb = 25 °C 100 250 -
VCE = 10 V; IC = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
100 250 -
VCE = 10 V; IC = 0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
50 160 -
hFE DC current gain
VCE = 10 V; IC = 1 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
10 30 -
IC = 100 mA; IB = 20 mA; Tamb = 25 °C - 33 50 mV
IC = 100 mA; IB = 10 mA; Tamb = 25 °C - 40 60 mV
VCEsat collector-emitter
saturation voltage
IC = 1 A; IB = 0.2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
- 225 350 mV
VBEsat base-emitter saturation
voltage
IC = 1 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 1.1 1.2 V
tddelay time - 7 - ns
trrise time - 565 - ns
ton turn-on time - 572 - ns
tsstorage time - 1530 - ns
tffall time - 700 - ns
toff turn-off time
VCC = 6 V; IC = 0.5 A; IBon = 0.1 A;
IBoff = -0.1 A; Tamb = 25 °C
- 2230 - ns
fTtransition frequency VCE = 10 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
- 30 - MHz
Cccollector capacitance VCB = 20 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
- 5.7 - pF
Ceemitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
- 150 - pF
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 6 / 14
006aab158
200
300
100
400
500
hFE
0
IC(mA)
10- 1 104
103
1 102
10
(2)
(1)
(3)
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
VCE (V)
0 542 31
006aab159
0.8
1.2
0.4
1.6
2.0
IC
(A)
0
270
240
210
180
150
120
IB(mA) = 300
90
60
30
Tamb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
006aab160
0.4
0.8
1.2
VBE
(V)
0
IC(mA)
10- 1 104
103
1 102
10
(2)
(1)
(3)
VCE = 10 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
006aab161
0.5
0.9
1.3
VBEsat
(V)
0.1
IC(mA)
10- 1 104
103
1 102
10
(2)
(1)
(3)
IC/IB = 5
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 7 / 14
006aab162
10- 1
10- 2
1
VCEsat
(V)
10- 3
IC(mA)
10- 1 104
103
1 102
10
(1)
(2)
(3)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab163
IC(mA)
10- 1 104
103
1 102
10
10- 2
10- 1
1
10
VCEsat
(V)
10- 3
(2)
(1)
(3)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab164
IC(mA)
10- 1 104
103
1 102
10
1
10
102
103
RCEsat
(Ω)
10- 1
(1)
(2)
(3)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aab165
IC(mA)
10- 1 104
103
1 102
10
1
10
102
103
RCEsat
(Ω)
10- 1
(1)
(2)
(3)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 8 / 14
11. Test information
Fig. 12. BISS transistor switching time definition
RC
R2
R1
DUT
mlb826
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 9 / 14
12. Package outline
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 06-03-16
06-08-29
wM
e1
e
EHE
B
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89
1 2 3
UNIT A
mm 1.6
1.4
0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
Fig. 14. Package outline SOT89
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 10 / 14
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot089_fr
1.2
1.9
2
2.25
4.75
1
(3×)
0.7
(3×)
0.6
(3×)
1.1
(2×)
1.2
0.85 0.2
0.5
1.7
4.85
3.95
4.6
1.51.5
Dimensions in mm
Fig. 15. Reflow soldering footprint for SOT89
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot089_fw
0.7
5.3
6.6
2.4
3.5
0.5
1.8
(2×)
1.5
(2×)
7.6
1.9 1.9
Dimensions in mm
Fig. 16. Wave soldering footprint for SOT89
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 11 / 14
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PBHV8115X v.1 20131209 Product data sheet - -
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 12 / 14
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 13 / 14
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8115X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 14 / 14
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 5
11 Test information ..................................................... 8
11.1 Quality information ............................................... 8
12 Package outline ..................................................... 9
13 Soldering .............................................................. 10
14 Revision history ................................................... 11
15 Legal information .................................................12
15.1 Data sheet status ............................................... 12
15.2 Definitions ...........................................................12
15.3 Disclaimers .........................................................12
15.4 Trademarks ........................................................ 13
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 December 2013