BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD241 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
TINUEULAVLOBMYSGNITAR
Collector-emitter voltage (RBE = 100 Ω)
BD242
BD242A
BD242B
BD242C
VCER
-55
-70
-90
-115
V
Collector-emitter voltage (IC = -30 mA)
BD242
BD242A
BD242B
BD242C
VCEO
-45
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-3 A
I)1 etoN ees( tnerruc rotcelloc kaeP CM -5 A
Continuous base current IB-1 A
Continuous device dissipation at (or below) 25°C P)2 etoN ees( erutarepmet esac tot 40 W
P)3 etoN ees( erutarepmet ria eerf C°52 )woleb ro( ta noitapissid ecived suounitnoC tot 2 W
IL½)4 etoN ees( ygrene daol evitcudni depmalcnU C232 mJ
Tegnar erutarepmet noitcnuj gnitarepO j-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Tsdnoces 01 rof esac morf mm 2.3 erutarepmet daeL L250 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA
(see Note 5)
IB = 0
BD242
BD242A
BD242B
BD242C
-45
-60
-80
-100
V
ICES
Collector-emitter
cut-off current
VCE = -55 V
VCE = -70 V
VCE = -90 V
VCE = -115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD242
BD242A
BD242B
BD242C
-0.2
-0.2
-0.2
-0.2
mA
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB=0
IB=0
BD242/242A
BD242B/242C
-0.3
-0.3 mA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -1 mA
hFE
Forward current
transfer ratio
VCE = -4 V
VCE = -4 V
IC= -1 A
IC= -3 A (see Notes 5 and 6) 25
10
VCE(sat)
Collector-emitter
saturation voltage IB = -0.6 A IC= -3 A (see Notes 5 and 6) -1.2 V
VBE
Base-emitter
voltage VCE = -4 V IC= -3 A (see Notes 5 and 6) -1.8 V
hfe
Small signal forward
current transfer ratio VCE = -10 V IC=-0.5A f = 1 kHz 20
|hfe|Small signal forward
current transfer ratio VCE = -10 V IC=-0.5A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3.125 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t ime I C = -1 A
VBE(off) = 3.7 V
IB(on) = -0.1 A
RL = 20 Ω
IB(off) = 0.1 A
tp = 20 µs, dc ≤ 2%
0.2 µs
toff Turn-off time 0.3 µs
OBSOLETE
BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
3
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·01 -0·1 -1·0 -10
hFE - DC Current Gain
10
100
1000 TCS632AH
VCE = -4 V
tp = 300 µs, duty cycle < 2%
TC = 25°C
TC = 80°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - mA
-0·1 -1·0 -10 -100 -1000
VCE(sat) - Collector-Emitter Saturation Voltage - V
-0·01
-0·1
-1·0
-10 TCS632AB
IC = -100 mA
IC = -300 mA
IC = -1 A
IC = -3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·01 -0·1 -1 -10
VBE - Base-Emitter Voltage - V
-0·5
-0·6
-0·7
-0·8
-0·9
-1 TCS632AC
VCE = -4 V
TC = 25°C
OBSOLETE
BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0·01
-0·1
-1·0
-10
-100 SAS632AD
BD242
BD242A
BD242B
BD242C
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50 TIS631AA
OBSOLETE
