BDP948_BDP950_BDP954 PNP Silicon AF Power Transistors * For AF driver and output stages 4 * High collector current 3 2 * High current gain 1 * Low collector-emitter saturation voltage * Complementary types: BDP947, BDP949 BDP953 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration BDP948 BDP948 1=B 2=C 3=E 4=C - - SOT223 BDP950 BDP950 1=B 2=C 3=E 4=C - - SOT223 BDP954 BCP954 1=B 2=C 3=E 4=C - - SOT223 1 Package 2011-10-05 BDP948_BDP950_BDP954 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BDP948 45 BDP950 60 BDP954 100 Collector-base voltage Unit VCBO BDP948 45 BDP950 60 BDP954 120 Emitter-base voltage VEBO 5 Collector current IC 3 Peak collector current, tp 10 ms ICM 5 Base current IB 200 Peak base current IBM 500 Total power dissipation- Ptot 5 W 150 C A mA TS 100 C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 10 K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-10-05 BDP948_BDP950_BDP954 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BDP948 45 - - IC = 10 mA, IB = 0 , BDP950 60 - - IC = 10 mA, IB = 0 , BDP954 100 - - IC = 100 A, IE = 0 , BDP948 45 - - IC = 100 A, IE = 0 , BDP950 60 - - IC = 100 A, IE = 0 , BDP954 120 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 45 V, IE = 0 - - 0.1 VCB = 45 V, IE = 0 , TA = 150 C - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 10 mA, VCE = 5 V 25 - - IC = 500 mA, VCE = 1 V 85 - 475 IC = 1 A, VCE = 2 V BDP948,BDP950 50 - - BDP954 15 - - VCEsat - - 0.5 VBEsat - - 1.3 fT - 100 - MHz Ccb - 40 - pF IC = 1 A, VCE = 2 V Collector-emitter saturation voltage1) V IC = 2 A, IB = 0.2 A Base emitter saturation voltage1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 100 MHz 1Pulse test: t < 300s; D < 2% 3 2011-10-05 BDP948_BDP950_BDP954 DC current gain hFE = (IC) VCE = 2 V Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 10 3 10 4 mA - IC hFE 10 3 10 2 10 100 C 25 C -50 C 10 1 0 10 10 100C 25C -50C 2 10 1 1 10 2 10 3 mA 10 10 0 0 4 0.1 0.2 0.3 V 0.4 IC Base-emitter saturation voltage Collector current IC = (VBE) IC = (VBEsat), hFE = 10 VCE = 2 V 10 4 10 4 mA mA 10 3 10 3 -50C 25C 100C IC IC -50C 25C 100C 10 2 10 2 10 1 10 0 0 0.6 VCEsat 10 1 0.2 0.4 0.6 0.8 1 V 10 0 0 1.3 VBEsat 0.2 0.4 0.6 0.8 1 V 1.3 VBE 4 2011-10-05 BDP948_BDP950_BDP954 Collector cutoff current ICBO = (TA) VCB = 45 V Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) 10 5 nA 425 pF 350 CCB(CEB ) ICB0 10 4 10 3 max 10 2 300 250 200 CEB 150 10 1 typ 100 10 0 50 CCB 10 -1 0 20 40 60 80 100 120 C 0 0 150 4 8 12 16 TA V 22 VCB(VEB Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 2 5.5 W 4.5 RthJS Ptot 4 3.5 10 1 3 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 2.5 2 10 0 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 C 10 -1 -6 10 150 ts 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 BDP948_BDP950_BDP954 Permissible Pulse Load Ptotmax/PtotDC = (tp ) Ptotmax/PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2011-10-05 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline BDP948_BDP950_BDP954 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 7 2011-10-05 BDP948_BDP950_BDP954 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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