MICROWAVE POWER GaAs FET TIM1213-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=7.5dB at 12.7GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB Channel Temperature Rise G1dB IDS1 G CONDITIONS UNIT dBm MIN. 35.5 dB 6.5 7.5 A dB % dBc -42 1.7 24 -45 2.2 0.8 A C 1.7 2.2 70 UNIT mS MIN. MAX. TYP. 1200 V -2.0 -3.5 -5.0 A 4.0 V -5 C/W 2.9 3.5 VDS= 9V f= 12.7 to 13.2GHz add IM3 Two-Tone Test Po=25.0 dBm IDS2 (Single Carrier Level) Tch (VDS x IDS + Pin - P1dB) TYP. MAX. 36.5 x Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 2.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -60A Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2006 TIM1213-4L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 5.2 Total Power Dissipation (Tc= 25 C) PT W 42.8 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-9D1B) 4-R2.4 2.0MIN. Unit: mm (1) (1) Gate (2) Source (2) (3) Drain 2.0MIN 0.50.15 1.80.3 0.2MAX 8.5 MAX. 3.2MAX +0.1 0.1 -0.05 13.00.3 17.0 MAX. 1.20.3 (3) 9.70.3 2.50.3 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1213-4L RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V IDS1.7A Pout(dBm) Pin=29.0dBm 37 36 35 34 33 12.7 13.2 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=13.2GHz 38 VDS=9V IDS1.7A 37 70 Pout 60 35 50 34 40 add 33 30 32 20 31 10 30 0 22 24 26 28 Pin(dBm) 3 30 32 add(%) Pout(dBm) 36 TIM1213-4L Power Dissipation(PT) vs. Case Temperature(Tc) 30 20 10 0 0 40 80 120 200 160 Tc( C ) IM3 vs. OUTPUT POWER CHARACTERISTICS -10 VDS= 9 V f= 13.2GHz f= 5MHz -20 IM3(dBc) PT(W) 40 -30 -40 -50 -60 20 22 24 26 28 Po(dBm), Single Carrier Level 4 30