1. Product profile
1.1 General description
Single planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
[1] Pulse test: tp300 s; 0.02.
2. Pinning information
[1] The marking bar indicates the cathode.
BAT46WJ
Single Schottky barrier diode
Rev. 2 — 8 November 2011 Product data sheet
SOD323F
Low forward voltage Low capacitance
Reverse voltage VR100 V AEC-Q101 qualified
Very small and flat lead SMD plastic
package
High-speed switching Voltage clamping
Line termination Reverse polarity protection
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRreverse voltage - - 100 V
VFforward voltage IF=250mA [1] --850mV
IRreverse current VR=75V [1] --4A
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode
21
sym001
12
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 2 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
3. Ordering information
4. Marking
5. Limiting values
[1] Tj=25C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
BAT46WJ SC-90 plastic surface-mounted package; 2 leads SOD323F
Table 4. Marking codes
Type number Marking code
BAT46WJ JK
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage - 100 V
IFforward current - 250 mA
IFSM non-repetitive peak
forward current square wave;
tp<10ms [1] -2.5A
Ptot total power dissipation Tamb 25 C[2][4] -400mW
[3][4] -715mW
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][3] - - 310 K/W
[2][3] - - 175 K/W
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 3 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Reflow soldering is the only recommended soldering method.
[4] Soldering point of cathode tab.
Rth(j-sp) thermal resistance from
junction to solder poi nt [4] --35K/W
Table 6. Thermal characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambi ent as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambi ent as a function of pulse duration; typical values
006aac385
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1
0.05
0.02 0.01
0
006aac386
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1
0.05
0.02 0.01
0
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 4 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
7. Characteristics
[1] Pulse test: tp300 s; 0.02.
[2] When switched from IF= 10 mA to IR=10mA; R
L= 100 ; measured at IR=1mA.
Table 7. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage [1]
IF= 0.1 mA - 175 200 mV
IF= 10 mA - 315 350 mV
IF=10mA; T
j=40 C - - 470 mV
IF= 50 mA - 415 475 mV
IF=50mA; T
j=40 C - - 560 mV
IF= 250 mA - 710 850 mV
IRreverse current [1]
VR= 1.5 V - 0.2 0.5 A
VR= 1.5 V; Tj=60C --12A
VR=10V - 0.3 0.8 A
VR=10V; T
j=60C --20A
VR=50V - 0.7 2 A
VR=50V; T
j=60C --44A
VR=75V - 1 4 A
VR=75V; T
j=60C --80A
VR=100V - 2 9 A
VR=100V; T
j=60C - - 120 A
VR=100V; T
j=85C - - 600 A
Cddiode capacitance f = 1 MHz
VR=0V --39pF
VR=1V --21pF
trr reverse recovery time [2] -5.9-ns
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 5 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
(1) Tamb = 150 C
(2) Tamb = 125 C
(3) Tamb =85C
(4) Tamb =25C
(5) Tamb =40 C
(1) Tamb = 125 C
(2) Tamb =85C
(3) Tamb =60C
(4) Tamb =25C
(5) Tamb =40 C
Fig 3. Forward current as a function of forward
voltage; typical values Fig 4. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
amb =25C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
006aac387
V
F
(V)
0.0 1.20.80.4
10
3
10
2
10
1
1
I
F
(A)
10
4
(1)
(2)
(3)
(4)
(5)
(3) (4)
(5)
006aac388
I
R
(A)
10
6
10
8
10
7
10
3
10
4
10
5
10
2
10
9
V
R
(V)
0 10060 8020 40
(5)
(1)
(2)
(4)
(3)
VR (V)
0 1008040 6020
006aac389
35
Cd
(pF)
25
15
5
0
10
20
30
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 6 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
Tj= 125 C
(1) =1
(2) =0.9
(3) =0.8
(4) =0.5
FR4 PCB, standard footprint
Tj= 150 C
(1) =1; DC
(2) = 0.5; f = 20 kHz
(3) = 0.2; f = 20 kHz
(4) = 0.1; f = 20 kHz
Fig 6. Average reverse power dissipation as a
function of reverse voltage; typical values Fig 7. Average forward current as a function of
ambient temperature; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Tj= 150 C
(1) =1; DC
(2) = 0.5; f = 20 kHz
(3) = 0.2; f = 20 kHz
(4) = 0.1; f = 20 kHz
Tj= 150 C
(1) =1; DC
(2) = 0.5; f = 20 kHz
(3) = 0.2; f = 20 kHz
(4) = 0.1; f = 20 kHz
Fig 8. Average forward current as a function of
ambient temperature ; typi cal values Fig 9. Average forward current as a function of
solder point temperature; typical values
VR (V)
0 1008040 6020
006aac390
0.10
0.15
0.05
0.20
0.25
PR(AV)
(W)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 50 100 150 1751257525
006aac391
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 50 100 150 1751257525
006aac392
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tsp (°C)
0 50 100 150 1751257525
006aac393
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 7 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
8. Test information
The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are
calculated according to the equations: with IM defined as peak current,
at DC, and with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle =0.05
Oscilloscope: rise time tr=0.35ns
Fig 10. Reverse recovery time test cir cuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50
Ω
IF
D.U.T.
Ri = 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 11. Duty cycle defi nition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
IFAV IM=
IRMS IM=
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 8 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Fig 12. Package outline SOD323F (SC-90)
04-09-13Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3 1.8
1.6
0.40
0.25
1.35
1.15
1
2
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BAT46WJ SOD323F 4 mm pitch, 8 mm tape and reel -115 -135
Reflow soldering is the only recommended soldering method.
Fig 13. Reflow soldering footprint SOD323F (SC-90)
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323f_fr
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 9 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAT46W J v.2 20111108 Product data sheet - BAT46WJ v.1
Modifications: Table 7: unit for reverse current IRat VR= 50 V corrected to A
Table 7: conditions of reverse voltage VR corrected
Section 13 “Legal information: updated
BAT46W J v.1 20100728 Product data sheet - -
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 10 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full dat a
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio nThe information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental ,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, lif e-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer pr oduct
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liabili ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessa ry
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cu stomer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyri ghts, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the prod uct specification.
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 11 of 12
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BAT46WJ
Single Schottky barrier diode
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 November 2011
Document identifier: BAT46WJ
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12