LM324D^STMICRO - STMICROELECTRONICS

1. Product profile

1.1 General description

Single planar Schottky barrier diode with an integrated guard ring for stress protection,

encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

[1] Pulse test: tp300 s; 0.02.

2. Pinning information

[1] The marking bar indicates the cathode.

BAT46WJ

Single Schottky barrier diode

Rev. 2 — 8 November 2011 Product data sheet

SOD323F

Low forward voltage Low capacitance

Reverse voltage VR100 V AEC-Q101 qualified

Very small and flat lead SMD plastic

package

High-speed switching Voltage clamping

Line termination Reverse polarity protection

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRreverse voltage - - 100 V

VFforward voltage IF=250mA [1] --850mV

IRreverse current VR=75V [1] --4A

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode

sym001

Product data sheet Rev. 2 — 8 November 2011 2 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

3. Ordering information

4. Marking

5. Limiting values

[1] Tj=25C before surge.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4] Reflow soldering is the only recommended soldering method.

6. Thermal characteristics

Tabl e 3. Ordering i nfo rmation

Type number Package

Name Description Version

BAT46WJ SC-90 plastic surface-mounted package; 2 leads SOD323F

Table 4. Marking codes

Type number Marking code

BAT46WJ JK

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage - 100 V

IFforward current - 250 mA

IFSM non-repetitive peak

forward current square wave;

tp<10ms [1] -2.5A

Ptot total power dissipation Tamb 25 C[2][4] -400mW

[3][4] -715mW

Tjjunction temperature - 150 C

Tamb ambient temperature 55 +150 C

Tstg storage temperature 65 +150 C

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][3] - - 310 K/W

[2][3] - - 175 K/W

Product data sheet Rev. 2 — 8 November 2011 3 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3] Reflow soldering is the only recommended soldering method.

[4] Soldering point of cathode tab.

Rth(j-sp) thermal resistance from

junction to solder poi nt [4] --35K/W

Table 6. Thermal characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

FR4 PCB, standard footprint

Fig 1. Transient thermal impedance from junction to ambi ent as a function of pulse duration; typical values

FR4 PCB, mounting pad for cathode 1 cm2

Fig 2. Transient thermal impedance from junction to ambi ent as a function of pulse duration; typical values

006aac385

−5

1010

−2

−4

−1

(s)

−3

th(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.25 0.2

0.1

0.05

0.02 0.01

006aac386

−5

1010

−2

−4

−1

(s)

−3

th(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.25 0.2

0.1

0.05

0.02 0.01

Product data sheet Rev. 2 — 8 November 2011 4 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

7. Characteristics

[1] Pulse test: tp300 s; 0.02.

[2] When switched from IF= 10 mA to IR=10mA; R

L= 100 ; measured at IR=1mA.

Table 7. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage [1]

IF= 0.1 mA - 175 200 mV

IF= 10 mA - 315 350 mV

IF=10mA; T

j=40 C - - 470 mV

IF= 50 mA - 415 475 mV

IF=50mA; T

j=40 C - - 560 mV

IF= 250 mA - 710 850 mV

IRreverse current [1]

VR= 1.5 V - 0.2 0.5 A

VR= 1.5 V; Tj=60C --12A

VR=10V - 0.3 0.8 A

VR=10V; T

j=60C --20A

VR=50V - 0.7 2 A

VR=50V; T

j=60C --44A

VR=75V - 1 4 A

VR=75V; T

j=60C --80A

VR=100V - 2 9 A

VR=100V; T

j=60C - - 120 A

VR=100V; T

j=85C - - 600 A

Cddiode capacitance f = 1 MHz

VR=0V --39pF

VR=1V --21pF

trr reverse recovery time [2] -5.9-ns

Product data sheet Rev. 2 — 8 November 2011 5 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

(1) Tamb = 150 C

(2) Tamb = 125 C

(3) Tamb =85C

(4) Tamb =25C

(5) Tamb =40 C

(1) Tamb = 125 C

(2) Tamb =85C

(3) Tamb =60C

(4) Tamb =25C

(5) Tamb =40 C

Fig 3. Forward current as a function of forward

voltage; typical values Fig 4. Reverse current as a function of reverse

voltage; typical values

f=1MHz; T

amb =25C

Fig 5. Diode capacitance as a function of reverse voltage; typical values

006aac387

(V)

0.0 1.20.80.4

−3

−2

−1

(A)

−4

(1)

(2)

(3)

(4)

(5)

(3) (4)

(5)

006aac388

(A)

−6

−8

−7

−3

−4

−5

−2

−9

(V)

0 10060 8020 40

(5)

(1)

(2)

(4)

(3)

VR (V)

0 1008040 6020

006aac389

(pF)

Product data sheet Rev. 2 — 8 November 2011 6 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

Tj= 125 C

(1) =1

(2) =0.9

(3) =0.8

(4) =0.5

FR4 PCB, standard footprint

Tj= 150 C

(1) =1; DC

(2) = 0.5; f = 20 kHz

(3) = 0.2; f = 20 kHz

(4) = 0.1; f = 20 kHz

Fig 6. Average reverse power dissipation as a

function of reverse voltage; typical values Fig 7. Average forward current as a function of

ambient temperature; typical values

FR4 PCB, mounting pad for cathode 1 cm2

Tj= 150 C

(1) =1; DC

(2) = 0.5; f = 20 kHz

(3) = 0.2; f = 20 kHz

(4) = 0.1; f = 20 kHz

Tj= 150 C

(1) =1; DC

(2) = 0.5; f = 20 kHz

(3) = 0.2; f = 20 kHz

(4) = 0.1; f = 20 kHz

Fig 8. Average forward current as a function of

ambient temperature ; typi cal values Fig 9. Average forward current as a function of

solder point temperature; typical values

VR (V)

0 1008040 6020

006aac390

0.10

0.15

0.05

0.20

0.25

PR(AV)

(W)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

0 50 100 150 1751257525

006aac391

0.1

0.2

0.3

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

0 50 100 150 1751257525

006aac392

0.1

0.2

0.3

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tsp (°C)

0 50 100 150 1751257525

006aac393

0.1

0.2

0.3

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Product data sheet Rev. 2 — 8 November 2011 7 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

8. Test information

The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are

calculated according to the equations: with IM defined as peak current,

at DC, and with IRMS defined as RMS current.

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

(1) IR=1mA

Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle =0.05

Oscilloscope: rise time tr=0.35ns

Fig 10. Reverse recovery time test cir cuit and waveforms

trr

(1)

+ IFt

output signal

trtpt

10 %

90 %

input signal

V = VR + IF × RS

RS = 50

D.U.T.

Ri = 50

SAMPLING

OSCILLOSCOPE

mga881

Fig 11. Duty cycle defi nition

006aaa812

duty cycle δ =

IFAV IM=

IRMS IFAV

IRMS IM=

Product data sheet Rev. 2 — 8 November 2011 8 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Fig 12. Package outline SOD323F (SC-90)

04-09-13Dimensions in mm

0.80

0.65

0.25

0.10

0.5

0.3

2.7

2.3 1.8

1.6

0.40

0.25

1.35

1.15

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BAT46WJ SOD323F 4 mm pitch, 8 mm tape and reel -115 -135

Reflow soldering is the only recommended soldering method.

Fig 13. Reflow soldering footprint SOD323F (SC-90)

0.951.65

2.2

2.1

3.05

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

0.5

(2×)

0.6

(2×)

0.6 (2×)0.5 (2×)

sod323f_fr

Product data sheet Rev. 2 — 8 November 2011 9 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAT46W J v.2 20111108 Product data sheet - BAT46WJ v.1

Modifications: •Table 7: unit for reverse current IRat VR= 50 V corrected to A

•Table 7: conditions of reverse voltage VR corrected

•Section 13 “Legal information”: updated

BAT46W J v.1 20100728 Product data sheet - -

Product data sheet Rev. 2 — 8 November 2011 10 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

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with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full dat a

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Applications — Applications that are described herein for any of these

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representation or warranty tha t such application s will be suitable for the

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Customers are responsible for the design and ope ration of their applications

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the prod uct specification.

Product data sheet Rev. 2 — 8 November 2011 11 of 12

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAT46WJ

Single Schottky barrier diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 8 November 2011

Document identifier: BAT46WJ

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12