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©
2000, 2001
MOS FIELD EFFECT TRANSI STOR
2SK3479
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15077EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•Super low on-state resistance:
RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)
•Low Ciss: Ciss = 11000 pF TYP.
•Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 100 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±83 A
Drain Current (pulse) Note1 ID(pulse) ±332 A
Total Power Dissipation (TC = 25°C) PT1 125 W
Total Power Dissipation (TA = 25°C) PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS 65 A
Single Avalanche Energy Note2 EAS 422 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3479 TO-220AB
2SK3479-S TO-262
2SK3479-ZJ TO-263
2SK3479-Z TO-220SMDNote
Note TO-220SMD package is produced only
in Japan. (TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
Data Sheet D15077EJ1V0DS
2
2SK3479
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTE RISTI CS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Volt age Drai n Current IDSS VDS = 100 V, VGS = 0 V10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V
Forward Transfer Adm i t tance | yfs |V
DS = 10 V, ID = 42 A3774S
Drain to Sourc e On-state Resist ance RDS(on)1 VGS = 10 V, ID = 42 A8.811mΩ
RDS(on)2 VGS = 4.5 V, ID = 42 A1013mΩ
Input Capaci tance Ciss VDS = 10 V 11000 pF
Output Capaci tance Coss VGS = 0 V 1100 pF
Reverse Transf er Capacitanc e Crss f = 1 MHz 540 pF
Turn-on Delay Time td(on) VDD = 50 V, ID = 42 A27ns
Rise Ti me trVGS = 10 V18ns
Turn-off Del a y T i me td(off) RG = 0 Ω140 ns
Fall Time tf13 ns
Total Gate Charge QGVDD = 80 V 210 nC
Gate to Source Charge QGS VGS = 10 V26nC
Gate to Drain Charge QGD ID = 83 A60nC
Body Diode Forward Voltage VF(S-D) IF = 83 A, VGS = 0 V1.0V
Reverse Recovery T i me trr IF = 83 A, VGS = 0 V85ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 280 nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T. L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T. R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T. R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 µs
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
Data Sheet D15077EJ1V0DS 3
2SK3479
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
100
0.1
1000
1 10 100
T
C
= 25˚C
Single Pulse 1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
I
D(DC)
Power Dissipation
Limited
DC
PW = 10 µs
100 µs
1 ms
10 ms
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - ˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
120
100
80
60
40
20
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
08020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
150
125
100
75
50
25
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
Rth(ch-C) = 1˚C/W
µµ
Rth(ch-A) = 83.3˚C/W
Data Sheet D15077EJ1V0DS
4
2SK3479
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
123456
V
DS
= 10 V
10
1
0.1
100
1000
T
A
= −40˚C
25˚C
75˚C
150˚C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01 0.1 1
10
100
10 100
0.1
0.01
1
Pulsed
TA = 150˚C
75˚C
25˚C
−40˚C
VDS = 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
5101520
Pulsed
20
16
12
8
4
0
42 A
ID = 83 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
101
50
40
30
20
10
0100 1000
Pulsed
V
GS
= 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate Cut-off Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
2.5
3.0
−50 0 50 100 150
0
Data Sheet D15077EJ1V0DS 5
2SK3479
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance - mΩ
−50 050 100 150
25
20
15
10
5
0
10 V
VGS = 4.5 V
Pulsed
ID = 42 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
01.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
0 V
V
GS
= 10 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1.0 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
QG - Gate Charge - nC
VDS - Drain to Source Voltage - V
50 100 150 200 250
160
120
80
40
0VDS
VGS
VDD = 80 V
50 V
20 V
ID = 83 A
16
12
8
4
0
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
0.1
1000
10000
100000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
110.1
100
1000
10 100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0 Ω
Data Sheet D15077EJ1V0DS
6
2SK3479
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS - Single Avalanche Current - A
10
100
1000
1
m10
m
VDD = 50
V
RG = 25 Ω
VGS = 20
→
0
V
IAS = 65
A
10
µ
100
µ
1
E
AS
=
422
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50 75 100
160
140
120
100
80
60
40
20
0
125 150
V
DD
= 50 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
I
AS
≤ 65 A
Data Sheet D15077EJ1V0DS 7
2SK3479
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10.6 MAX.
10.0 TYP. 3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
φ
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
1.0±0.5
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX. 1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8±0.2
4) TO-220SMD(MP-25Z)Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX. 1.3±0.2
0.5±0.2
0.5R TYP.
0.8R TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2SK3479
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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