MOC8111/MOC8112 No Base Connection Phototransistor Optocoupler FEATURES * Current Transfer Ratio MOC8111, 20% minimum MOC8112, 50% minimum * No Base Terminal Connection for Improved Common Mode Interface Immunity * Field-Effect Stable by TRIOS(R) (TRansparent IOn Shield) * Long Term Stability * Industry Standard Dual-in-Line Package * Underwriters Lab File #E52744 * V VDE #0884 Available with Option 1 Dimensions in inches (mm) 3 5 Collector Cathode 2 4 5 6 NC 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. The MOC8111, MOC8112 is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package. Maximum Ratings (TA=25C) Emitter Reverse Voltage ................................................. 6.0 V DC Forward Current ......................................... 60 mA Surge Forward Current (t10 s)......................... 2.5 A Total Power Dissipation .................................. 100 mW Detector Collector-Emitter Breakdown Voltage ................... 30 V Collector Current .............................................. 50 mA Collector Current (t1 ms) ............................... 150 mA Total Power Dissipation .................................. 150 mW Package Isolation Test Voltage between Emitter and Detector, Refer to Standard Climate 23/50 DIN 50014 ................................................ 5300 VRMS Creepage ..................................................... 7.0 mm Clearance ..................................................... 7.0 mm Isolation Thickness between Emitter and Detector .................................. 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1...................... 175 Isolation Resistance VIO=500 V, TA=25C ........................................1012 VIO=500 V, TA=100C ......................................1011 Storage Temperature Range ............ -55C to +150C Ambient Temperature Range............ -55C to +100C Soldering Temperature (max. 10 s, dip soldering distance to seating plane 1.5 mm) ............................... 260C 6 NC Anode 1 DESCRIPTION In contrast to the IL1, the base terminal is not connected, resulting in a substantially improved common-mode interference immunity. pin one ID 1 .248 (6.30) .256 (6.50) D E The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. 2 .018 (0.45) .022 (0.55) 4 Emitter .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18 .031 (0.80) min. 3-9 114 . (2.90) .130 (3.0) .010 (.25) typ. .300-.347 (7.62-8.81) .031 (0.80) .035 (0.90) .100 (2.54) typ. Electrical Characteristics (TA=25C) Parameter Sym. Min. Typ. Max. Unit Condition Forward Voltage VF -- 1.15 1.5 V IF=10 mA Reverse Leakage Current IR -- 0.05 10 A VR=6.0 V Capacitance CJ -- 25 -- pF V=0 V, f=1.0 MHz Collector-Emitter Breakdown Voltage BVCEO 30 -- -- V IC=1.0 A Collector-Emitter Leakage Current ICEO -- 1.0 50 nA VCE=10 V Emitter-Collector Breakdown Voltage VECO 7.0 -- -- V IE=10 A Collector-Emitter Capacitance CCE -- 7.0 -- pF VCE=0 V, f=1.0 MHz Emitter Detector Package Collector Saturation Voltage VCESAT -- 0.15 0.4 V IC=500 A IF=10 mA Current Transfer Ratio MOC8111 MOC8112 CTR -- -- % IF=10 mA VCE=10 V Turn On Time tON -- 7.5 20 s Turn Off Time tOFF -- 5.7 20 s VCC=10 V RL=100 , IC=2.0 mA, 20 50 see Figure 1 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-215 March 7, 2000-21 Figure 1. Switching times VCC =10 V IC Input Pulse RL =100 Vout Input 10% Output Pulse 90% tr Input current adjusted to achieve I C =2 mA toff ton Test Circuit tf Waveforms 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) MOC8111/2 2-216 March 7, 2000-21