MPSA42_ND74Z - FAIRCHILD SEMICONDUCTOR

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MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier

MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0

October 2014

MPSA42 / MMBTA42 / PZTA42

NPN High-Voltage Amplifier

Features

• This device is designed for application as a video output

and other high-voltage applications.

• Sourced from process 48.

Ordering Information

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or

low-duty-cycle operations.

Part Number Top Mark Package Packing Method

MPSA42 MPSA42 TO-92 3L Bulk

MMBTA42 1D SOT-23 3L Tape and Reel

PZTA42 A42 SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 300 V

VCBO Collector-Base Voltage 300 V

VEBO Emitter-Base Voltage 6 V

ICCollector Current - Continuous 500 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

SOT-23

Mark: 1D

TO-92

B C E

SOT-223

MPSA42 MMBTA42 PZTA42

E B C

MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier

MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.

4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

Symbol Parameter Max. Unit

MPSA42 MMBTA42(3) PZTA42(4)

PDTotal Devic e Dissipation 625 240 1000 mW

Derate Above 2 5°C 5.00 1.92 8.00 mW/°C

RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 200 515 125 °C/W

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V(BR)CEO Collector-Emitter Breakdo w n Voltage(5) IC = 1.0 mA, IB = 0 300 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 300 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 V

ICBO Collector Cut-Off Current VCB = 200 V, IE = 0 0.1 μA

IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 0.1 μA

On Characteristics(5)

hFE DC Current Gain VCE = 10 V, IC = 1.0 mA 25

VCE = 10 V, IC = 10 mA 40

VCE = 10 V, IC = 30 mA 40

VCE(sat) Collector-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.5 V

VBE(sat) Base-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.9 V

Small Signal Characteristics

fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

f = 100 MHz 50 MHz

Ccb Collector-Base Capacitance VCB = 20 V, IE = 0,

f = 1.0 MHz 3.0 pF

MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier

MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Emitter Saturation Voltage vs.

Collector Current Figure 4. Base-Emitter On Voltage vs.

Collector Current

Figure 5. Collector Cut-Off Current vs.

Ambient Temperature Figure 6. Collector-Base and Emitter-Base

Capacitance vs. Reverse-Bias Voltage

1 10 100 1000

100

120

140 125oC

100oC

75oC

-40oC

25oC

VCE=10V

hFE- DC CURRENT GAIN

IC- COLLECTOR CURRENT [mA]

1 10 100 1000

0.01

0.1

100

TA = 125oC

100oC

75oC

-40oC25oC

VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

110100

0.2

0.4

0.6

0.8

1.0

125oC

100oC

75oC

-40oC

25oC

VBE(SAT)- BASE-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

1 10 100 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TA = 125oCTA = 100oC

TA = 75oC

TA = -40oC

TA = 25oC

VBE(ON)- BASE-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

25 50 75 100 125 150

10 0

T - AM BIEN T TE MPE RATU R E ( C )

I - COLLECTOR CURRENT (nA)

V = 150V

CBO

0 2 4 6 8 101214161820

100

COB

CIB

CAPACITANCE [pF]

REVERSE BIAS VOLTAGE [V]

MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier

MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 7. Power Dissipation vs. Ambient Temperature

0 25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

SOT-23

TO-92

SOT-223

PD - POWER DISSIPATION [W]

TC - CASE TEMPERATURE [oC]

DETAIL A

SCALE: 2:1

3.10

2.90

6.70

6.20

3.70

3.30

0.84

0.60

2.30

4.60

1.80 MAX

6.10

2.30

LAND PATTERN RECOMMENDATION

0.95

1.90

3.25

7.30

6.70

GAGE

PLANE

0.60 MIN

SEE DETAIL A

C0.08 C

NOTES: UNLESS OTHERWISE SPECIFIED

A) DRAWING BASED ON JEDEC REGISTRATION

TO-261C, VARIATION AA.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS DO NOT INCLUDE BURRS

OR MOLD FLASH. MOLD FLASH OR BURRS

DOES NOT EXCEED 0.10MM.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M-2009.

E) LANDPATTERN NAME: SOT230P700X180-4BN

F) DRAWING FILENAME: MKT-MA04AREV3

SEATING

PLANE

10°

0° TYP

0.10 C B

0.10

0.00

0.25

R0.15±0.05

1.70

10°

5°

10°

5°

0.35

0.20

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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