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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier Features * This device is designed for application as a video output and other high-voltage applications. * Sourced from process 48. MPSA42 MMBTA42 PZTA42 C C E E C B TO-92 B SOT-23 SOT-223 Mark: 1D E B C Ordering Information Part Number Top Mark Package Packing Method MPSA42 MPSA42 TO-92 3L Bulk MMBTA42 1D SOT-23 3L Tape and Reel PZTA42 A42 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 6 V 500 mA -55 to +150 C IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 www.fairchildsemi.com MPSA42 / MMBTA42 / PZTA42 -- NPN High-Voltage Amplifier October 2014 Values are at TA = 25C unless otherwise noted. Symbol Max. Parameter Unit MPSA42 MMBTA42(3) PZTA42(4) Total Device Dissipation 625 240 1000 mW Derate Above 25C 5.00 1.92 8.00 mW/C RJC Thermal Resistance, Junction-to-Case 83.3 RJA Thermal Resistance, Junction-to-Ambient 200 515 125 PD C/W C/W Notes: 3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 6 V ICBO Collector Cut-Off Current VCB = 200 V, IE = 0 0.1 A IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 0.1 A (5) On Characteristics hFE DC Current Gain VCE = 10 V, IC = 1.0 mA 25 VCE = 10 V, IC = 10 mA 40 VCE = 10 V, IC = 30 mA 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.9 V Small Signal Characteristics fT Ccb Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 50 MHz 3.0 pF Notes: 5. Pulse test: pulse width 300 s, duty cycle 2%. (c) 1997 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 www.fairchildsemi.com 2 MPSA42 / MMBTA42 / PZTA42 -- NPN High-Voltage Amplifier Thermal Characteristics o 125 C 120 VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V] 140 VCE=10V o 100 C o 75 C hFE- DC CURRENT GAIN 100 o 25 C 80 60 o -40 C 40 20 0 1 10 100 1000 100 10 1 o 100 C o TA = 125 C 0.1 o 75 C o 25 C 0.01 1 10 100 1000 IC- COLLECTOR CURRENT [mA] IC- COLLECTOR CURRENT [mA] Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. DC Current Gain vs. Collector Current 1.0 1.2 VBE(ON)- BASE-EMITTER VOLTAGE [V] VBE(SAT)- BASE-EMITTER VOLTAGE [V] o -40 C o -40 C 0.8 o 25 C o 125 C 0.6 o 100 C o 75 C 0.4 0.2 1 10 o TA = -40 C 1.0 o TA = 25 C 0.8 0.6 o TA = 75 C o 0.4 TA = 100 C o TA = 125 C 0.2 0.0 100 1 10 IC- COLLECTOR CURRENT [mA] 100 1000 IC- COLLECTOR CURRENT [mA] Figure 3. Base-Emitter Saturation Voltage vs. Collector Current Figure 4. Base-Emitter On Voltage vs. Collector Current V CB = 150V CAPACITANCE [pF] I CBO - COLLECTOR CURRENT (nA) 100 100 10 1 25 50 75 100 125 T A - AMBIENT TEMPE RATURE ( C) CIB 10 COB 150 1 0 2 4 6 8 10 12 14 16 18 20 REVERSE BIAS VOLTAGE [V] Figure 5. Collector Cut-Off Current vs. Ambient Temperature (c) 1997 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 Figure 6. Collector-Base and Emitter-Base Capacitance vs. Reverse-Bias Voltage www.fairchildsemi.com 3 MPSA42 / MMBTA42 / PZTA42 -- NPN High-Voltage Amplifier Typical Performance Characteristics MPSA42 / MMBTA42 / PZTA42 -- NPN High-Voltage Amplifier Typical Performance Characteristics (Continued) 1.0 PD - POWER DISSIPATION [W] SOT-223 0.8 0.6 TO-92 0.4 0.2 SOT-23 0.0 0 25 50 75 100 125 150 o TC - CASE TEMPERATURE [ C] Figure 7. Power Dissipation vs. Ambient Temperature (c) 1997 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 www.fairchildsemi.com 4 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10 5 GAGE PLANE R0.150.05 R0.150.05 10 TYP 0 0.25 SEATING PLANE 10 5 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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