2SB1409(L)-(S) - Hitachi Semiconductor

2SB1409(L)/(S)

Silicon PNP Epitaxial

ADE-208-877 (Z)

1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)

Outline

123

11. Base

2. Collector

3. Emitter

4. Collector

DPAK

S Type

L Type

2SB1409(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage VCBO –180 V

Collector to emitter voltage VCEO –160 V

Emitter to base voltage VEBO –5 V

Collector current IC–1.5 A

Collector peak current IC(peak) –3 A

Collector power dissipation PC*118 W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage V(BR)CBO –180 — — V IC = –1 mA, IE = 0

Collector to emitter breakdown

voltage V(BR)CEO –160 — — V IC = –10 mA, RBE = ∞

Emitter to base breakdown

voltage V(BR)EBO –5 — — V IE = –1 mA, IC = 0

Collector cutoff current ICBO — — –10 µAV

CB = –160 V, IE = 0

DC current transfer ratio hFE1*160 — 200 VCE = –5 V, IC = –150 mA*2

hFE2 30 — — VCE = –5 V, IC = –500 mA*2

Collector to emitter saturation

voltage VCE(sat) ——–1V I

= –500 mA, IB = –50 mA

Base to emitter voltage VBE — — –1.5 V VCE = –5 V, IC = –150 mA

Gain bandwidth product fT— 240 — MHz VCE = –5 V, IC = –150 mA

Collector output capacitance Cob — 25 — pF VCB = –10 A, IE = 0, f = 1 MHz

Notes: 1. The 2SB1409(L)/(S) is grouped by hFE1 as follows.

60 to 120 100 to 200

2. Pulse test.

2SB1409(L)/(S)

0Case Temperature TC (°C)

Collector power dissipation Pc (W)

Maximum Collector Dissipation Curve

50 100 150

–0.01

–0.03

–0.1

–0.3

–1.0

–10

–3

Collector to emitter Voltage VCE (V)

Collector Current IC (A)

–3 –10 –30 –100 –300

Area of Safe Operation

IC (max)

iC (peak)

PW = 10 ms

1 ms

DC Operation (T

= 25°C)

Ta = 25°C

1 Shot Pulse

Collector to emitter Voltage VCE (V)

Collector Current IC (A)

Typical Output Characteristics

–10 –20 –30 –40 –50

–0.2

–0.4

–0.6

–0.8

–1.0

IB = 0 TC = 25°C

PC = 18 W

–1 mA

–1.5

–2.5

–3.5

–4.5

–2

–3

–4

–5

100

300

1,000

Collector current IC (A)

DC current transfer ratio hFE

–0.01 –0.03 –0.1 –0.3 –1.0

DC Current Transfer Ratio vs.

Collector Current

VCE = –5 V

Ta = 25°C

2SB1409(L)/(S)

–0.01

–0.1

–1.0

–10

Collector current IC (A)

–0.001 –0.01 –0.1 –1.0

Collector to emitter saturation voltage

VCE (sat) (V)

Saturation Voltage vs. Collector Current

lC = 10 lB

Ta = 25°C–0.1

–0.3

–1.0

–3

–10

Collector current IC (A)

–0.03 –0.1 –0.3 –1.0 –3.0

Base to emitter saturation voltage

VBE (sat) (V)

Saturation Voltage vs. Collector Current

lC = 10 lB

Ta = 25°C

–0.4

–0.8

–1.2

–1.6

–2.0

Base to emitter voltage VBE (V)

Collector current IC (A)

0 –0.4 –0.8 –1.2 –1.6 –2.0

Typical Transfer Characteristics

VCE = –5 V

Ta = 25°C10

100

300

1,000

Collector current IC (A)

Gain bandwidth product fT (MHz)

–0.01 –0.03 –0.1 –0.3 –1.0

Gain Bandwidth Product vs.

Collector Current

VCE = –5 V

Ta = 25°C

2SB1409(L)/(S)

100

300

Collector to base voltage VCB (V)

Collector output capacitance Cob (pF)

–1 –3 –10 –30 –100

Collector Output Capacitance vs.

Collector to Base Voltage

f = 1 MHz

IE = 0

Ta = 25°C

2SB1409(L)/(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (L)-(1)

—

Conforms

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(1)

—

Conforms

0.28 g

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(4.9)

(5.3)

2SB1409(L)/(S)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00,

Singapore 049318

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower,

World Finance Centre,

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 2.0