ZPY3V9 to ZPY100
Document Number 85790
Rev. 1.8, 08-Nov-10
Vishay Semiconductors
www.vishay.com
1
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Zener Diodes
Features
• Silicon planar power Zener diodes
• For use in stabilizing and clipping circuits
with high power rating
• The Zener voltages are graded according
to the international E 12 standard.
Smaller voltage tolerances are available
upon request
• These diodes are also available in the MELF case
with the type designation ZMY3V9 to ZMY100
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
Mechanical Data
Case: DO-41
Weight: approx. 310 mg
Cathode band color: black
Packaging codes/options:
TR/5K per 13" reel (52 mm tape), 25K/box
TAP/5K per ammopack (52 mm tape), 25K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Notes:
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Notes:
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
17173
Parameter Test condition Symbol Value Unit
Zener current
(see Table "Characteristics")
Power dissipation Ptot 1.3 1) W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RthJA 110 1) K/W
Maximum junction temperature Tj175 °C
Storage temperature range Tstg - 55 to + 175 °C
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Document Number 85790
Rev. 1.8, 08-Nov-10
ZPY3V9 to ZPY100
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Notes:
1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
2) Tested with pulses tp = 5 ms
Part number
Zener voltage
range 2)
Dynamic
resistance
Temperature
coefficient of Zener
voltage
Te s t
current Reverse voltage Admissible Zener
current 1)
VZ at IZT
rzj at IZT1,
f = 1 kHz TCVZ at IZT IZT VR at IR = 0.5 µA IZ at Tamb = 25 °C
V10-4/°C mA VmA
min. max. typ. min. max.
ZPY3V9 3.7 4.1 4 (< 7) - 7 2 100 - 290
ZPY4V3 4.0 4.6 4 (< 7) - 7 3 100 - 260
ZPY4V7 4.4 5.0 4 (< 7) - 7 4 100 - 235
ZPY5V1 4.8 5.4 2 (< 5) - 6 5 100 > 0.7 215
ZPY5V6 5.2 6.0 1 (< 2) - 3 5 100 > 1.5 193
ZPY6V2 5.8 6.6 1 (< 2) - 1 6 100 > 2.0 183
ZPY6V8 6.4 7.2 1 (< 2) 0 7 100 > 3.0 157
ZPY7V5 7.0 7.9 1 (< 2) 0 7 100 > 5.0 143
ZPY8V2 7.7 8.7 1 (< 2) 3 8 100 > 6.0 127
ZPY9V1 8.5 9.6 2 (< 4) 3 8 50 > 7.0 117
ZPY10 9.41 10.6 2 (< 4) 5 9 50 > 7.5 105
ZPY11 10.4 11.6 3 (< 7) 5 10 50 > 8.5 94
ZPY12 11.4 12.7 3 (< 7) 5 10 50 > 9.0 85
ZPY13 12.4 14.1 4 (< 9) 5 10 50 > 10 78
ZPY15 13.8 15.8 4 (< 9) 5 10 50 > 11 70
ZPY16 15.3 17.1 5 (< 10) 7 11 25 > 12 63
ZPY18 16.8 19.1 5 (< 11) 7 11 25 > 14 57
ZPY20 18.8 21.2 6 (< 12) 7 11 25 > 15 52
ZPY22 20.8 23.3 7 (< 13) 7 11 25 > 17 48
ZPY24 22.8 25.6 8 (< 14) 7 12 25 > 18 42
ZPY27 25.1 28.9 9 (< 15) 7 12 25 > 20 38
ZPY30 28 32 10 (< 20) 7 12 25 > 22.5 35
ZPY33 31 35 11 (< 20) 7 12 25 > 25 31
ZPY36 34 38 25 (< 60) 7 12 10 > 27 29
ZPY39 37 41 30 (< 60) 8 12 10 > 29 26
ZPY43 40 46 35 (< 80) 8 13 10 > 32 24
ZPY47 44 50 40 (< 80) 8 13 10 > 35 22
ZPY51 48 54 45 (< 100) 8 13 10 > 38 20
ZPY56 52 60 50 (< 100) 8 13 10 > 42 18
ZPY62 58 66 60 (< 130) 8 13 10 > 47 16
ZPY68 64 72 65 (< 130) 8 13 10 > 51 14
ZPY75 70 79 70 (< 160) 8 13 10 > 56 13
ZPY82 77 88 80 (< 160) 8 13 10 > 61 12
ZPY91 85 96 120 (< 250) 9 13 5 > 68 11
ZPY100 94 106 130 (< 250) 9 13 5 > 75 10
ZPY3V9 to ZPY100
Document Number 85790
Rev. 1.8, 08-Nov-10
Vishay Semiconductors
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 2. Pulse Thermal Resistance vs. Pulse Duration
Figure 3. Dynamic Resistance vs. Zener Current
0100
200 °C
2
1
0
W
P
tot
T
ambgzpy1_04
ZPY...
10
-5
10
-4
10
-3
10
-2
10
-1
110
s
10
3
10
2
10
1
°C/W
2
5
4
3
2
5
4
3
2
5
4
3
r
thA
t
P
gzpy1_05
tP
v =
T
PI
___
T
tP
0.5
0.2
0.1
0.05
0.02
0.01
ZPY...
1
2
10 100
mA
10
3
10
2
1
Ω
r
zj
I
Zgzpy1_06
54
3254
3
2
5
4
3
2
5
4
3
2
5
4
3
10
77
ZPY5.1
ZPY4.3
ZPY18
ZPY12
ZPY7.5
ZPY6.2
ZPY1 ZPY10
ZPY...
Figure 4. Dynamic Resistance vs. Zener Current
Figure 5. Dynamic Resistance vs. Zener Current
Figure 6. Thermal Resistance vs. Lead Length
ZPY...
0.1
2
110
mA
10
3
10
2
10
Ω
2
5
4
3
r
zj
I
Zgzpy1_07
54
3254
3
7
2
5
4
3
7
ZPY100
ZPY82
ZPY68
ZPY56
ZPY43
1
2
10 100
mA
100
10
1
Ω
2
5
4
3
r
zj
I
Zgzpy1_08
54
3254
3
7
2
5
4
3
7
ZPY43
ZPY36
ZPY30
ZPY24
ZPY22
ZPY...
ZPY18
ll
ZPY...
010
15 20
mm
200
100
0
°C/W
R
thA
lead length l
gzpy1_09
5
www.vishay.com
4
Document Number 85790
Rev. 1.8, 08-Nov-10
ZPY3V9 to ZPY100
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Package Dimensions in millimeters (inches): DO-41
Figure 7. Breakdown Characteristics
Figure 8. Breakdown Characteristics
0123456789 1011 12131415 V
0
40
80
120
160
200
240
mA
I
Z
V
Zgzpy1_01
ZPY...
Tj = 25 °C
Test Current lZ
100 mA
50 mA
ZPY4.7
ZPY3.9
ZPY5.6
ZPY6.8
ZPY8.2
ZPY10
ZPY12
0 5 101520253035
40 45 50 V
10
20
30
40
50
60
mA
IZ
VZgzpy1_02
Tj = 25 °C
ZPY...
Test Current lZ
25 mA
10 mA
ZPY22
ZPY18
ZPY27
ZPY33
ZPY15
ZPY39
ZPY47
0
Figure 9. Breakdown Characteristics
0100
200 V
0
10
20
mA
IZ
VZgzpy1_03
50 150
Test Current lZ
10 mA
5 mA
Tj = 25 °C
ZPY56
ZPY68
ZPY82
ZPY100
94 9368
Cathode identification
26 (1.024) min. 4.1 (0.161) max. 26 (1.024) min.
0.86 (0.034) max.
2.6 (0.102) max.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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