© 2008 IXYS CORPORATION, All rights reserved
GenX3TM 300V IGBT
High Speed PT IGBTs for
50-150kHz switching
VCES = 300V
IC110 = 42A
VCE(sat) ≤ ≤
≤ ≤
≤
1.85V
tfi typ = 65ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 250μA, VGE = 0V 300 V
VGE(th) IC= 250μA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES 25 μA
VGE = 0V TJ = 125°C 500 μA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 42A, VGE = 15V, Note1 1.54 1.85 V
TJ = 125°C 1.54 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 300 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ 300 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC110 TC= 110°C (chip capability) 42 A
ICM TC= 25°C, 1ms 250 A
IATC= 25°C 42 A
EAS TC= 25°C 250 mJ
SSOA VGE= 15V, TVJ = 125°C, RG = 10Ω ICM = 84 A
(RBSOA) Clamped inductive load @ ≤ 300V
PCTC= 25°C 223 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C
MdMounting torque (TO-247)(TO-220) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-247 6.0 g
TO-220 3.0 g
DS99885B(07/08)
G = Gate C = Collector
E = Emitter TAB = Collector
IXGA42N30C3
IXGH42N30C3
IXGP42N30C3
TO-220 (IXGP)
TO-247 (IXGH)
C (TAB)
Features
zOptimized for low switching losses
zSquare RBSOA
zHigh current handling capability
zInternational standard packages
Advantages
zHigh power density
zLow gate drive requirement
Applications
zHigh Frequency Power Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
TO-263 (IXGA)
G
E
GCEC (TAB)
C (TAB)
G
E
C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC = 0.5 • IC110, VCE = 10V, Note 1 20 33 S
Cies 2140 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 218 pF
Cres 60 pF
Qg 76 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 15 nC
Qgc 26 nC
td(on) 21 ns
tri 23 ns
Eon 0.12 mJ
td(off) 113 170 ns
tfi 65 120 ns
Eoff 0.15 0.28 mJ
td(on) 21 ns
tri 22 ns
Eon 0.21 mJ
td(off) 127 ns
tfi 102 ns
Eoff 0.20 mJ
RthJC 0.56 °C/W
RthCK TO-220 0.50 °C/W
TO-247 0.25 °C/W
Inductive Load, TJ = 125°°
°°
°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 10Ω
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Inductive Load, TJ = 25°°
°°
°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 10Ω
Pins: 1 - Gate 2 - Drain
TO-220 (IXGP) Outline
TO-263 (IXGA) Outline
Note1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
© 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Fi g . 1. Ou tpu t C har acteri sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
CE
- Volts
I
C
- A mpe re s
VGE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
25
50
75
100
125
150
175
200
225
250
275
300
325
0246810121416
V
CE
- Volts
I
C
-
Amperes
VGE
= 15
V
13
V
11
V
7V
9V
5V
Fi g . 3. Outp u t Ch ar ac ter i sti c s
@ 125ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
CE
- Vo lt s
I
C
- A mpe res
VGE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction T em perature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- N orma liz ed
VGE
= 15V I C = 84A
I C = 42A
I C = 21A
Fi g . 5. C ol l ect o r-to - Emit ter Vo l tag e
vs. Gate-to -Emi tter Vo l tag e
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- V o lts
I C
= 84A
42A
21A
TJ = 25ºC
Fig. 6. Input Adm i ttance
0
10
20
30
40
50
60
70
80
90
100
110
120
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
TJ = 125ºC
25ºC
- 40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
60
0 20 40 60 80 100 120 140
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig . 10. Reverse-Bi as Safe Oper ati n g Area
0
10
20
30
40
50
60
70
80
90
50 100 150 200 250 300
V
CE
- Volts
I
C
- A mpe re s
T
J
= 125ºC
R
G
= 10Ω
dV / dt < 10V / ns
Fi g . 11. Maxi mu m Tran sien t Ther mal I mp ed an c e
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 1020304050607080
Q
G
- NanoCoulombs
V
GE
- V o lt s
V
CE
= 150V
I
C
= 42A
I
G
= 10 mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Fig. 12. Inductive Switching
Ener g y L o ss vs . Ga te R esi stan c e
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
10 15 20 25 30 35 40 45 50 55 60 65 70 75
R
G
- Ohm s
E
off
- M illiJo ule s
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
E
on
- M illiJo ule s
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 200V
I
C
= 84A
I
C
= 42A
Fig. 17. Inductive T urn-off
Switching Times vs. Junction T emperature
70
80
90
100
110
120
130
140
150
160
170
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nan osecon ds
110
115
120
125
130
135
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω , V
GE
= 15V
V
CE
= 200V
I C = 84A
I
C
= 42A
Fig. 15. Inductive T urn-off
Swit ch i n g Times vs. Gate R esistan ce
100
110
120
130
140
150
160
170
180
190
200
10 15 20 25 30 35 40 45 50 55 60 65 70 75
R
G
- Ohms
t
f
- Nanoseconds
100
150
200
250
300
350
400
450
500
550
600
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 200V
I
C
= 84A
I
C
= 42A
Fig. 13. Inductive Swiching
Ener g y L o ss vs . C o l l ect o r Cu r r e n t
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
20 25 30 35 40 45 50 55 60 65 70 75 80 85
I
C
- A mp e res
E
off
- M illiJo u les
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
E
on
- M illiJo ule s
E
off
E
on
- - - -
R
G
= 10Ω , V
GE
= 15V
V
CE
= 200V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centi grad e
E
off
- M illiJo ule s
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
E
on
- M illiJo ule s
Eoff Eon
- - - -
R
G
= 10Ω , V
GE
= 15V
V
CE
= 200V
I
C
= 84A
I
C
= 42A
Fig. 16. Inductive Turn-off
Switchi n g Times vs. C o l l ector C u r r en t
50
60
70
80
90
100
110
120
130
140
150
160
170
20 30 40 50 60 70 80
I
C
- A mp er es
t
f
- Nanoseconds
110
115
120
125
130
135
140
t
d(off)
- Nan osecon ds
t
f
t
d(off)
- - - -
R
G
= 10Ω , VGE = 15V
V
CE
= 200V T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
IXYS REF: G_42N30C3(55)8-05-08-A
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
0
20
40
60
80
100
120
140
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - A mpe res
t
r - Nanoseconds
18
20
22
24
26
28
30
32
t d(on) - Nanoseconds
t
r td(on)
- - - -
R
G
= 10Ω
, V
GE
= 15V
25ºC < TJ < 125ºC
V
CE
= 200V
Fig. 20. Inductive Turn-on
Switch i n g Times vs. Ju n cti o n Tempe r atu r e
30
40
50
60
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Cent i grad e
t
r - Nanoseconds
18
20
22
24
26
28
30
32
t d(on) - Nanoseconds
t
r td(on)
- - - -
R
G
= 10Ω
, V
GE
= 15V
V
CE
= 200V
I
C
= 42A
I
C
= 84A
Fig. 18. Inductive T urn-on
Switch i n g Times vs. Gate R esi stan ce
20
40
60
80
100
120
140
160
180
200
10 15 20 25 30 35 40 45 50 55 60 65 70 75
RG - Oh ms
t r - Nanoseconds
10
20
30
40
50
60
70
80
90
100
t d(on) - Nanoseconds
t
r td(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 200V
I
C
= 42A
I
C
= 84A
