Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6407
Issue 1
IRFF320
2N6792
N-CHANNEL ENHANCEMENT
MODE TRANSIST OR
FEATURES
•V
(BR)DSS = 400V
•I
D = 2.0A
•R
DSON = 1.80ΩΩ
VDS Drain–Source Voltage
VGS Gate–Source Voltage
IDDrain Current Continuous TCase = 25°C
TCase = 100°C
IDM Drain Current Pulsed
PDTotal Device Dissipation @ TCase = 25°C
TCase = 100°C
TJ, TSTG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
TLMaximum Lead Temperature 1.6mm from Case for
10 secs.
400V
±20V
2.0A
1.25A
10A
20W
8W
–55 to +150°C
6.25°C/W
175°C/W
300°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE (TO-205AF)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Source Underside View
PIN 2 – Gate PIN 3 – Drain
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
123
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain–Source Breakdown Voltage
VGS(th) Gate Thresshold Voltage
IGSS Gate–Source Leakage
IDSS Zero Gate Voltage Drain Current
rDS(on) Drain–Source On–Resistance1
gfsForward Transconductance1
Ciss Input Capacitance
Coss Output capacitance
Crss Reverse Transfer Capacitance
td (on) Turn–On Delay Time
trRiseTime
td (off) Turn off Delay Time
tfFallTime
VSD Diode Forward Voltage1
ISContinues Current
ISM Pulsed Current2
trr Reverse Recovery Time
Qrr Reverse Recovered Charge
VGS = 0 ID= 1.0mA
VDS=VGS ID= 250μA
VDS = 0 VGS = ±20V
VDS =0.8 x V(BR)DSS
VGS = 0 Tj = 125°C
VGS = 10V ID= 1.25A
VDS = >15V ID= 1.25A
VDS = 25V VGS = 0
f = 1.0MHZ
VDD = 200V
ID= 2.0A
RG = 7.5Ω
VGS = 0 IS= 2.0A
IF= 2.0A VDD = 50V
dIF/dT = 100A/μS
400
2.0 4.0
±100
25
250
1.8
1.0 350
100
45 40
35
60
35
1.4
2.0
10
650
5.0
V
nA
μA
Ω
s( )
pF
ns
V
A
ns
μC
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6407
Issue 1
ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Ω
IRFF320
2N6792
