IRFF320 2N6792 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. * V(BR)DSS = 400V 5.08 (0.200) typ. * ID = 2.0A 2.54 (0.100) 2 1 3 * RDSON = 1.80 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 45 TO-39 PACKAGE (TO-205AF) Underside View PIN 1 - Source PIN 2 - Gate PIN 3 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS VGS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous TCase = 25C TCase = 100C IDM Drain Current Pulsed PD Total Device Dissipation @ TCase = 25C TCase = 100C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RJC Thermal Resistance Junction to Case RJA Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.6mm from Case for 10 secs. 400V 20V 2.0A 1.25A 10A 20W 8W -55 to +150C 6.25C/W 175C/W 300C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6407 Issue 1 IRFF320 2N6792 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Test Conditions Min. V(BR)DSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0mA 400 VGS(th) Gate Thresshold Voltage VDS=VGS ID = 250A 2.0 IGSS Gate-Source Leakage VDS = 0 VGS = 20V IDSS Zero Gate Voltage Drain Current rDS(on) Drain-Source On-Resistance1 Transconductance1 gfs Ciss Forward Coss Output capacitance Crss Reverse Transfer Capacitance td (on) Turn-On Delay Time tr RiseTime td (off) Turn off Delay Time tf FallTime Input Capacitance Typ. 4.0 100 VDS =0.8 x V(BR)DSS VGS = 10V Tj = 125C ID = 1.25A VDS = >15V ID = 1.25A VDS = 25V VGS = 0 VGS = 0 Max. Unit 25 250 1.8 1.0 nA A s( ) 350 pF 100 f = 1.0MHZ V 45 VDD = 200V 40 ID = 2.0A 35 RG = 7.5 60 ns 35 SOURCE DRAIN DIODE RATING CHARACTERISTICS VSD Diode Forward Voltage1 IS Continues Current VGS = 0 IS = 2.0A 1.4 2.0 Current2 ISM Pulsed trr Reverse Recovery Time IF = 2.0A Qrr Reverse Recovered Charge dIF/dT = 100A/S V A 10 VDD = 50V 650 ns 5.0 C 1) Pulse test : Pulse Width < 300s ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6407 Issue 1