2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 grams(approx.) Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage R GS <1.0M _ VDGR 60 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TA=25 C) ID 115 mA Power Dissipation (TA=25 C) PD 200 mW R JA 625 C/W TJ, Tstg -55 to 150 C Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Device Marking 2N7002DW= Note 1: Pulse Width Limited by Maximum Junction Temperature WEITRON http://www.weitron.com.tw 2N7002DW Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=10 uA V(BR)DSS 60 70 - V Gate-Threshold Voltage VDS=V GS , ID =-250uA VGS (th) 1.0 1.5 2.0 V Gate-body Leakage VGS= _+20V, VDS=0V IGSS - - + _ 10 nA Zero Gate Voltage Drain Current VDS=60V, VGS=0V @ Tc=25 C VDS=60V, VGS=0V @ Tc=125 C IDSS - - 1.0 500 uA 0.5 1.0 - A - 3.2 4.4 7.5 13.5 gfs 80 - - mS Input Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss - 22 50 Output Capacitance VDS=25V, VGS=0V, f=1MHZ Coss - 11 25 Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Crss - 2.0 5.0 Turn-On Time VDD=30V, RL=150 ,ID=0.2A VGEN=10V, RGEN=25 td(on) - 7.0 20 nS Turn-Off Time VDD=30V, RL=150 , ID=0.2A VGEN=10V, RGEN=25 td(off ) - 11 20 nS On-State Drain Current VGS=10V, VDS=7.5V ID (on) Drain-Source On-Resistance VGS=5V, ID=0.05A @ Tj=25 C VGS=10V, ID=0.5A @ Tj =125 C RDS (on) Forward Transconductance VDS=10V, ID=0.2A Dynamic PF Switching WEITRON http://www.weitron.com.tw 2N7002DW 0.8 I D , DRAIN-SOURCE CURRENT (A) 7 V GS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.6 T j = 25C R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESIST ANCE 1.0 5.5V 5.0V 0.4 0.2 6 5 V GS = 5.0V 4 3 V GS = 10V 2 1 0 0 0 1 3 2 V DS , DRAIN-SOURCE 0 5 4 0.6 I D , DRAIN CURRENT V OLTAGE (V) FIG.1 On-Region Characteristics 0.8 1.0 (A) FIG.2 On-Resistance vs Drain Current 6 R DS(ON) , N RMALIZED DRAIN-SOURCE ON-RESIST ANCE 2.0 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESIST ANCE 0.4 0.2 1.5 V GS = 10V , I D = 0.5A V GS = 5.0V , I D = 0.05A 1.0 0.5 0 5 4 I D = 50mA I D = 500mA 3 2 1 0 -55 -30 -5 20 45 70 95 120 145 Tj , JUNCTION TEMPERA TURE (C) FIG.3 On-Resistance vs Junction Temperature WEITRON http://www.weitron.com.tw 0 2 4 6 8 10 V GS , GA TE TO SOURCE 12 14 16 18 VOL TAGE (V) FIG.4 On-Resistance vs. Gate-Source Voltage