PD- 91833C IRFP22N50A SMPS MOSFET HEXFET(R) Power MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS RDS(on) max ID 0.23 22A 500V TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 22 14 88 277 2.2 30 4.8 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies l l Full Bridge Converters Power Factor Correction Boost Notes through www.irf.com are on page 8 1 12/15/99 IRFP22N50A Static @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V(BR)DSS V(BR)DSS/TJ Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.55 --- V/C Reference to 25C, ID = 1mA --- --- 0.23 VGS = 10V, ID = 13A 2.0 --- 4.0 V VDS = VGS, ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, T J = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 12 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 26 94 47 47 3450 513 27 4935 137 264 Max. Units Conditions --- S VDS = 50V, ID = 13A 120 ID = 22A 32 nC VDS = 400V 52 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 22A ns --- RG = 4.3 --- R D = 11,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 1180 22 28 mJ A mJ Typ. Max. Units --- 0.24 --- 0.45 --- 40 C/W Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 22 --- --- showing the A G integral reverse 88 --- --- S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 22A, VGS = 0V --- 570 850 ns TJ = 25C, IF = 22A --- 6.1 9.2 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFP22N50A 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 4.5V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 4.5V 1 0.1 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 5.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 0.1 4.0 20s PULSE WIDTH TJ = 150 C 10.0 ID = 22A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP22N50A V GS C is s C rss C oss C , C a pa c itan c e (p F ) 10000 = = = = 20 0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd VGS , Gate-to-Source Voltage (V) 100000 C iss 1000 C oss 100 C rs s 10 1 10 100 VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 ID = 22A 0 1000 20 40 60 80 100 120 Q G , Total Gate Charge (nC) V D S , D rain-to-S ource V oltage (V ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 TJ = 150 C I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.8 10us 100us 10 1ms 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP22N50A 25 VGS 20 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 15 10V Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 TC , Case Temperature 125 150 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP22N50A EAS , Single Pulse Avalanche Energy (mJ) 3000 1 5V TOP 2500 D R IV E R L VDS BOTTOM ID 9.8A 14A 22A 2000 D .U .T RG + V - DD IA S 20V 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A 1500 1000 500 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V 640 QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F V D S av , A valanche Voltage (V ) QGS 630 620 610 600 590 580 .3F D.U.T. + V - DS 570 A 0 VGS 4 8 12 16 20 24 I av , A valanche C urrent (A ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRFP22N50A Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFP22N50A TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 3 .65 (.1 43 ) 3 .55 (.1 40 ) 15 .90 (.6 26 ) 15 .30 (.6 02 ) -B - 0.25 (.0 1 0) M 5 .3 0 (.2 09 ) 4 .7 0 (.1 85 ) 2 .5 0 (.08 9) 1 .5 0 (.05 9) 4 D B M -A 5 .50 (. 217 ) 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2 NO TES : 5.5 0 (.2 17) 4.5 0 (.1 77) 2X 1 D IME N SION ING & TO LE R AN CING P E R A NS I Y14.5M, 1982. 2 C ON TR OLLIN G D IME N SIO N : IN CH . 3 C ON F OR MS TO JED E C OU TLIN E T O-247-A C . 3 -C- 14 .8 0 (.5 83 ) 14 .2 0 (.5 59 ) 2 .40 (. 094 ) 2 .00 (. 079 ) 2X 5.45 (.21 5) 2X 4.3 0 (.1 70) 3.7 0 (.1 45) 0 .80 (.03 1) 3 X 0 .40 (.01 6) 1 .40 (.0 56 ) 3X 1 .00 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .40 (.13 3) 3 .00 (.11 8) 2 .60 (.1 0 2) 2 .20 (.0 8 7) C A S LE AD A S SIG N MEN TS 1 2 3 4 - GA TE DR AIN SO UR C E DR AIN TO-247AC Part Marking Information E X A M P L E : T H IS IS A N IR F P E 3 0 W IT H A S S E M B L Y LOT C ODE 3A1Q A IN T E R N A T IO N A L R E C T IF I E R PA R T NU M B E R IR F P E 30 LOGO 3A1Q A S SE M B L Y LOT CODE 9302 D ATE CO DE (Y Y W W ) Y Y = YE A R W W W EEK Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 4.87mH RG = 25, IAS = 22A. (See Figure 12a) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 22A, di/dt 190A/s, VDD V(BR)DSS, TJ 150C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 12/99 8 www.irf.com