512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 1 - Rev 1.0
July 2005
K7M161835B
K7M163635B
18Mb B-die NtRAM
TM
Specification
100TQFP with Pb & Pb-Free
(RoHS co m pli ant)
* Samsung Electronics reserves the right to change products or specification without notice.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure couldresult in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 2 - Rev 1.0
July 2005
K7M161835B
K7M163635B
Document Title
512Kx36 & 1Mx18-Bit Flow Through NtRAMTM
The attached data sheets are prepared and approved by SAMSUNG Elec tronics. SAMSUNG Electronics CO., LTD. reserve the right to change th e
specifications. SAMSUNG Elect ronics will evaluate and reply to your requests an d questions on the parameters of this device. If you have any que s-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev . No.
0.0
0.1
0.2
0.3
0.4
1.0
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
1. Initial document.
1. Update the DC current spec(ICC, ISB)
1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
1. Remove the 1.8V Vdd voltage level
1. Remove the -75 speed bin
1. Finalize the datasheet
Draf t Date
Mar. 23, 2004
May. 21, 2004
Sep. 21. 2004
Oct. 18, 2004
Jan. 04, 2004
July 18, 2005
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 3 - Rev 1.0
July 2005
K7M161835B
K7M163635B
18Mb NtRAM(Flow Through / Pipelined) Ordering Information
Org. Part Num ber Mode VDD Speed
FT ; Access Time(ns)
Pipelined ; Cycle Time (MHz) PKG Temp
1Mx18 K7M161835B-Q(P)C(I)65 FlowThrough 3.3/2.5 6.5ns Q : 100TQFP
F : 165FBGA
P : Lead-Free
100TQFP
E : Lead Free
165FBGA
C
; Commercial
Temp.Range
I
; Industrial
Temp.Range
K7N161831B-Q(F,E,P)C(I)25/16 Pipelined 3.3/2.5 250/167MHz
512Kx36 K7M163635B-Q(P)C(I)65 FlowThrough 3.3/2.5 6.5ns
K7N163631B-Q(F,E,P)C(I)25/16 Pipelined 3.3/2.5 250/167MHz
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 4 - Rev 1.0
July 2005
K7M161835B
K7M163635B
512Kx36 & 1Mx18-Bit Flow Through NtRAMTM
The K7M163635B and K7M161835B are 18,874,368-bits Syn-
chronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Mem ory uti-
lizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, Flow-Through SRAM allows output data to
simply flow freely from the memory array.
The K7M163635B and K7M161835B are implemented with
SAMSUNG′s high performance CMO S technology and is avail-
able in 100pin TQFP packages. Multiple power and ground pins
minimize ground bounce.
GENERAL DESCRIPTIONFEATURES
LOGIC BLOCK DIAGRAM
• VDD= 2.5 or 3.3V +/- 5% Power Supply.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A (Lead and Lead free package)
• Operating in commeical and industrial temperature range.
NtRAMTM and No Turnaround Random Access Memory are trademarks of Samsung.
WE
BW
x
CLK
CKE
CS
1
CS
2
CS
2
ADV
OE
ZZ
DQa
0
~ DQd
7
or
DQa
0
~ DQb
8
ADDRESS
ADDRESS
REGISTER
CONTROL
LOGIC
A
′
0
~A
′
1
36 or 18
DQPa ~ DQPd
BUFFER
DATA-IN
REGISTER
K
REGISTER
BURST
ADDRESS
COUNTER
WRITE
CONTROL
LOGIC
CONTROL
REGISTER
K
A [0:18]or
A [0:19]
LBO
A
2
~A
18
or
A
2
~A
19
A
0
~A
1
(x=a,b ,c ,d or a ,b)
512Kx36, 1Mx18
MEMORY
ARRAY
FAST ACCESS TIMES
Parameter Sym. -65 Unit
Cycle Time tCYC 7.5 ns
Clock Access Time tCD 6.5 ns
Output Enable Access Time tOE 3.5 ns
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 5 - Rev 1.0
July 2005
K7M161835B
K7M163635B
PIN CONFIGURATION(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
NC/DQPc
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
Vss
VDD
VDD
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
NC/DQPd
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb/NC
DQb7
DQb6
VDDQ
VSSQ
DQb5
DQb4
DQb3
DQb2
VSSQ
VDDQ
DQb1
DQb0
VSS
VDD
ZZ
DQa7
DQa6
VDDQ
VSSQ
DQa5
DQa4
DQa3
DQa2
VSSQ
VDDQ
DQa1
DQa0
DQPa/NC
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
A6
A7
CS1
CS2
BWd
BWc
BWb
BWa
CS2
VDD
VSS
CLK
WE
CKE
OE
ADV
A18
A17
A8
81 A9
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
A16
A15
A14
A13
A12
A11
A10
N.C.
N.C.
VDD
VSS
N.C.
N.C.
A0
A1
A2
A3
A4
A5
31
LBO
PIN NAME
Notes : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
SYMBOL P IN NAME TQFP PI N NO. SYMBOL PIN NAME TQFP PI N NO.
A0 - A18
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx(x=a,b,c,d)
OE
ZZ
LBO
Address Inputs
Address Adva nce/L oad
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,84,99,100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
VDD
VSS
N.C.
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
or NC
VDDQ
VSSQ
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Output Power Supply
(2.5V or 3.3V)
Output Ground
15,16,41,65,91
14,17,40,66,67,90
38,39,42,43
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
K7M163635B(512Kx36)
VSS
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 6 - Rev 1.0
July 2005
K7M161835B
K7M163635B
PIN CONFIGURATION(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
N.C.
N.C.
N.C.
VDDQ
VSSQ
N.C.
N.C.
DQb8
DQb7
VSSQ
VDDQ
DQb6
DQb5
VSS
VDD
VDD
VSS
DQb4
DQb3
VDDQ
VSSQ
DQb2
DQb1
DQb0
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A10
N.C.
N.C.
VDDQ
VSSQ
N.C.
DQa0
DQa1
DQa2
VSSQ
VDDQ
DQa3
DQa4
VSS
VSS
VDD
ZZ
DQa5
DQa6
VDDQ
VSSQ
DQa7
DQa8
N.C.
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
A6
A7
CS1
CS2
BWb
BWa
CS2
VDD
VSS
CLK
WE
CKE
OE
ADV
A19
A18
A8
81 A9
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
A17
A16
A15
A14
A13
A12
A11
N.C.
N.C.
VDD
VSS
N.C.
N.C.
A0
A1
A2
A3
A4
A5
31
LBO
K7M161835B(1Mx18)
N.C.
N.C.
PIN NAME
Notes : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
SYMBOL PIN NAME TQFP PIN NO. SYMBOL PIN NAME TQFP PIN NO.
A0 - A19
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx(x=a,b)
OE
ZZ
LBO
Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,84,99,100
85
88
89
87
98
97
92
93,94
86
64
31
VDD
VSS
N.C.
DQa0~a8
DQb0~b8
VDDQ
VSSQ
Power Supply(+3 .3V)
Ground
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Output Power Supply
(2.5V or 3.3V)
Output Ground
15,16,41,65,91
14,17,40,66,67,90
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 7 - Rev 1.0
July 2005
K7M161835B
K7M163635B
FUNCTION DESCRIPTION
The K7M16 3635B and K 7M161835B are NtRAMTM designed to sustain 100% bus bandwidth by e liminating turnaround c ycle when
there is transition from Read to Write, or vice versa.
All inputs (with the exception of OE, LBO and ZZ) are synchronized to rising clock edges.
All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses c an be internally generated by the
burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next
operation.
Clock Enable(CKE ) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous
inputs are ignored and the internal device registers will hold their previous values.
NtRAMTM latches external address and initiates a cycle, when CKE, ADV are driven to low and all three chip enables(CS1, CS2, CS2)
are active .
Output Enable(OE) can be used to disable the output at any given time.
Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the
address register, CKE is driven low, all three chip enables(CS1, CS 2, CS2) are active, the write enable input signals WE are driven
high, and ADV driven low. Data appears at the outputs within the same clock cycle as the address for the data. Also during read oper-
ation OE must be driven low for the device to drive out the requested data.
Write operation occurs when WE is driven low at the rising edge of the clock. BW[d:a] can be used for byte write operation. The Flow
Through NtRAMTM uses a late write cycle to utilize 100% of the bandwidth.
At the first rising edge of the clock, WE and addre ss are registered, and the data assoc iated with that address is required one cycle
later.
Subsequent addresses are generat ed by A DV High for the burst access as shown below. The starting point of the burst seguence is
provided by the external address. The burst address counter wraps around to its initial state upon completion.
The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected.
And when this pin is high, Interleaved burst sequence is selected.
During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At
this time, internal state of the SRAM is preser ved. When ZZ returns to low, the SRAM no rmally operates after 2 cyc les of wake up
time.
BURST SEQUENCE TABLE (Interleaved Burst, LBO=High)
LBO PIN HIGH Case 1 Case 2 Case 3 Case 4
A1A0A1A0A1A0A1A0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
0
1
1
1
0
1
0
1
1
0
0
0
1
0
1
1
1
0
0
1
0
1
0
BQ TABLE (Linear Burst, LBO=Low)
Note : 1. LBO pin must be tied to High or Low, and Floating S tate must not be allowed.
LBO PIN LOW Case 1 Case 2 Case 3 Case 4
A1A0A1A0A1A0A1A0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
1
1
0
1
0
1
0
1
1
0
0
0
1
0
1
1
0
0
1
1
0
1
0
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 8 - Rev 1.0
July 2005
K7M161835B
K7M163635B
STATE DIAGRAM FOR NtRAMTM
BEGIN
WRITE
BURST
WRITE
BEGIN
READ
WRITE
DS
READ
BURST
READ
DS
WRITE
DS
READ
DS
READ
DS
WRITE
BURST
DESELECT
BURST
READ
BURST
WRITE
READ WRITE
BURST BURST
Note s : 1. An IGNORE CLO CK EDGE cycle is not shown is the above diag ram. This is becaus e CKE HIGH only blocks th e clock(CLK) inp ut and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
COMMAND ACTION
DS DESELECT
READ BEGIN READ
WRITE BEGIN WRITE
BURST BEGIN READ
BEGIN W R IT E
CONTINUE DESELECT
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 9 - Rev 1.0
July 2005
K7M161835B
K7M163635B
SYNCHRONOUS TRUTH TABLE
Notes : 1. X means "Don′t Care". 2. The rising edge of clock is symbolized by (↑).
3. A continue deselect cycle can only be enterd if a deselect cycle is executed first.
4. WRI TE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
5. Operation finally depends on status of asynchronous input pins(ZZ and OE).
CS1CS2CS2ADV WE BWxOE CKE CLK ADDRESS ACCESSED OPERATION
HXXLXXX L ↑N/A Not Selected
XLXLXXXL↑N/A Not Selected
XXHLXXX L ↑N/A Not Selected
XXXHXXX L ↑N/A Not Selected Continue
LHLLHXL L ↑External Address Begin Burst Read Cycle
XXXHXXL L ↑Next Address Continue Burst Read Cycle
LHLLHXHL ↑External Address NOP/Dummy Read
XXXHXXH L ↑Next Address Dummy Read
LHLLLLXL↑External Address Begin Burst Write Cycle
XXXHXLX L ↑Next Address Continue Bur st Write Cycle
LHLLLHX L ↑N/A NOP/Write Abort
XXXHXHX L ↑Next Address Write Abort
XXXXXXXH↑Current Address Ignore Clock
WRITE TRUTH TABLE( x36)
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WE BWaBWbBWcBWdOPERATION
HXXXX READ
LLHHH WRITE BYTE a
LHLHH WRITE BYTE b
LHHLH WRITE BYTE c
LHHHL WRITE BYTE d
LLLLL WRITE ALL BYTEs
L H H H H WRITE ABORT/NOP
TRUTH TABLES
WRITE TRUTH TABLE(x18)
Notes : 1. X means "Don′t Care ".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WE BWaBWbOPERATION
HXX READ
LLH WRITE BYTE a
LHL WRITE BYTE b
L L L WRITE ALL BYTEs
L H H WRITE ABORT/NOP
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 10 - Rev 1.0
July 2005
K7M161835B
K7M163635B
ASYNCHRONOUS TRUTH TABLE
Operation ZZ OE I/O STATUS
Sleep Mode H X High-Z
Read LL DQ
L H High-Z
Write L X Din, High-Z
Deselected L X High-Z
Notes
1. X means "Don′t C are".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
*Notes : S tresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER SYMBOL RATING UNIT
Voltage on VDD Supply Relative to VSS VDD -0.3 to 4.6 V
Voltage on Any Other Pin Relative to VSS VIN -0 .3 to V DD+0.3 V
Power Dissipation PD1.6 W
Storage Temperature TSTG -65 to 150 °C
Operating Temperature Commercial TOPR 0 to 70 °C
Industrial TOPR -40 to 85 °C
Storage Temperature Range Under Bias TBIAS -10 to 85 °C
CAPACITANCE*(TA=25°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT
Input Capacitance CIN VIN=0V - 5 pF
Output Capacitance COUT VOUT=0V - 6 pF
OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C)
Notes: 1. The above parameters are also guaranteed at industrial temperature range.
2. It should be VDDQ ≤ VDD
PARAMETER SYMBOL MIN Typ. MAX UNIT
Supply Voltage
VDD1 2.375 2.5 2.625 V
VDDQ1 2.375 2.5 2.625 V
VDD2 3.135 3.3 3.465 V
VDDQ2 3.135 3.3 3.465 V
Ground VSS 000V
VSS
VIH
VSS-1.0V
20% t CYC(MIN)
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 11 - Rev 1.0
July 2005
K7M161835B
K7M163635B
DC ELECTRICAL CHARACTERISTICS
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT NOTES
Input Leakage Current(except ZZ) IIL VDD=Max ; VIN=VSS to VDD -2 +2 µA
Output Leakage Current IOL Output Disabled, -2 +2 µA
Operating Current ICC Device Selected, IOUT=0mA,
ZZ≤VIL , Cycle Tim e ≥ tCYC Min -65 - 300 mA 1,2
Standby Current
ISB
Device deselected, IOUT=0mA,
ZZ≤VIL, f=Max,
All Inputs≤0.2V or ≥ VDD-0.2V -65 - 170 mA
ISB1 Device deselected, IOUT=0mA, ZZ≤0.2V, f=0,
All Inputs=fixed (VDD-0.2V or 0.2V) - 150 mA
ISB2 Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
f=Max, All Inputs≤VIL or ≥VIH - 130 mA
Output Low V oltage(3.3V I/O) VOL IOL=8.0mA - 0.4 V
Output High V oltage(3.3V I/O) VOH IOH=-4.0mA 2.4 - V
Output Low V oltage(2.5V I/O) VOL IOL=1.0mA - 0.4 V
Output High V oltage(2.5V I/O) VOH IOH=-1.0mA 2.0 - V
Input Low Voltage(3.3V I/O) VIL -0.3* 0.8 V
Input High Voltage(3.3V I/O) VIH 2.0 VDD+0.3** V 3
Input Low Voltage(2.5V I/O) VIL -0.3* 0.7 V
Input High Voltage(2.5V I/O) VIH 1.7 VDD+0.3** V 3
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER VALUE
Input Pulse Level(for 3.3V I/O) 0 to 3.0V
Input Pulse Level(for 2.5V I/O) 0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3/2.5V I/O) 1.0V/ns
Input and Output Timing Referen ce Levels for 3.3V I/O 1.5V
Input and Output Timing Referen ce Levels for 2.5V I/O VDDQ/2
Output Load See Fig. 1
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 12 - Rev 1.0
July 2005
K7M161835B
K7M163635B
AC TIMING CHARACTERISTICS
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. All addre ss inpu ts must mee t the sp eci fied setup and hold time s f or all risi ng clock(CLK) edges whe n AD V is sam pled low an d CS is sampled
low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
3. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
4. A write cycle is de fined by WE low havin g been regi sterd into the de vice at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
5. To avoid bus contention, At a given vlotage and temperature tLZC is more than tHZC.
The soecs as shown do not imply bus contention because tLZC is a Min. parameter that is worst case at totally different test conditions
(0°C,3.465V) than tHZC, which is a Max. paramete r(wor st case at 70°C,3.135V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperatue.
PARAMETER SYMBOL -65 UNIT
MIN MAX
Cycle Tim e tCYC 7.5 - ns
Clock Access Time tCD -6.5ns
Output Enable to Data Valid tOE -3.5 ns
Clock High to Output Low-Z tLZC 2.5 - ns
Output Hold from Clock High tOH 2.5 - ns
Output Enable Low to Output Low-Z tLZOE 0-ns
Output Enable High to Output High-Z tHZOE -3.5
ns
Clock High to Output High-Z tHZC -3.8ns
Clock High Pulse Width tCH 2.5 - ns
Clock Low Pulse Width tCL 2.5 - ns
Address Setup to Clock High tAS 1.5 -ns
CKE Setup to Clock High tCES 1.5 -ns
Data Setup to Clock High tDS 1.5 -ns
Write Setup to Clock High (WE, BWX)tWS 1.5 -ns
Address Advance Setup to Clock High tADVS 1.5 -ns
Chip Select Setup to Clock High tCSS 1.5 -ns
Address Hold from Clock High tAH 0.5 - ns
CKE Hold from Clock High tCEH 0.5 - ns
Data Hold from Clock High tDH 0.5 - ns
Write Hold from Clock High (WE, BWX)tWH 0.5 - ns
Address Advance Hold from Clock High tADVH 0.5 - ns
Chip Select Hold from Clock High tCSH 0.5 - ns
ZZ High to Power Down tPDS 2 - cycle
ZZ Low to Power Up tPUS 2 - cycle
Output Load(B),
(for tLZC, tLZOE, tHZOE & tHZC)
Dout
353Ω / 1538Ω 5pF*
+3.3V for 3.3V I/O
319Ω / 1667Ω
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Zo=50Ω
RL=50ΩVL=1.5V for 3.3V I/O
VDDQ/2 for 2 .5V I/O
/+2.5V for 2.5V I/O
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 13 - Rev 1.0
July 2005
K7M161835B
K7M163635B
SLEEP MODE
SLEEP MO DE is a low current , power-down mode in which t he device is deselected and current is reduce d to ISB2. The duration of
SLEEP MODE is dictated by the length of time the ZZ is in a High state.
After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z
The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE.
When the ZZ pin becom es a logic High, ISB2 is guaranteed after the time tZZI is met. Any operation pending when entering SLEEP
MODE is not guaranteed to successful com plete. Therefore, SLEE P M ODE (REA D or W RITE) must not be initiated until valid pend-
ing operations are completed. similarly, when exiting SLEEP M ODE during tPUS, only a DESELECT or READ cyc le should be given
while the SRAM is transitioning out of SLEEP MODE.
SLEEP MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS
Current during SLEEP MODE ZZ ≥ VIH ISB2 130 mA
ZZ active to input ignored tPDS 2 cycle
ZZ inactive to input sampled tPUS 2 cycle
ZZ active to SLEEP current tZZI 2 cycle
ZZ inactive to exit SLEEP current tRZZI 0
K
tPDS
ZZ setup cycle
tRZZI
ZZ
Isupply
All inputs
(except ZZ)
Outputs
(Q)
tZZI
tPUS
ZZ recovery cycle
Deselect or Read Only
High-Z
DON′T CARE
ISB2
SLEEP MODE WAVEFORM
Normal
operation
cycle
Deselect or Read Only
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 14 - Rev 1.0
July 2005
K7M161835B
K7M163635B
Clock
CKE
Address
WRITE
CS
ADV
OE
Data Out
TIMING WAVEFORM OF READ CYCLE
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L , and CS2 = L
tCH tCL
tCES tCEH
tAS tAH
A1 A2 A3
tWS tWH
tCSS tCSH
tOE tHZOE
tLZOE
tCD
tOH tHZC
Q3-4Q3-3Q3-2Q3-1Q2-4Q2-3Q2-2Q2-1
Q1-1
Don′t Care
Undefined
tCYC
tADVS tADVH
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 15 - Rev 1.0
July 2005
K7M161835B
K7M163635B
TIMING WAVEFORM OF WRTE CYCLE
Clock
Address
WRITE
CS
ADV
Data In
tCH tCL
A2 A3
D2-1D1-1 D2-2 D2-3 D2-4 D3-1 D3-2 D3-3
OE
Data Out
tDS tDH
tHZOE
Don′t Care
Undefined
tCYC
CKE
A1
tCES tCEH
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Q0-4
D3-4
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 16 - Rev 1.0
July 2005
K7M161835B
K7M163635B
TIMING WAVEFORM OF SINGLE READ/WRITE
Clock
Address
WRITE
CS
ADV
OE
Data In
tCH tCL
tDS tDH
Data Out
A2 A4 A5
D2
tOE
tLZOE
Q1
Don′t Care
Undefined
tCYC
CKE
tCES tCEH
A1 A3 A7A6
Q3 Q4 Q6
D5
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Q7
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 17 - Rev 1.0
July 2005
K7M161835B
K7M163635B
TIMING WAVEFORM OF CKE OPERATION
Clock
Address
WRITE
CS
ADV
OE
Data In
tCH tCL
Data Out
A1 A2 A3 A4 A5
tCES tCEH
Don′t Care
Undefined
tCYC
CKE
tDS tDH
D2
Q3 Q4Q1
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L , and CS2 = L
tCD
tLZC tHZC
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 18 - Rev 1.0
July 2005
K7M161835B
K7M163635B
TIMING WAVEFORM OF CS OPERATION
Clock
Address
WRITE
CS
ADV
OE
Data In
tCH tCL
Data Out
A1 A2 A3 A4 A5
Don′t Care
Undefined
tCYC
CKE
D5
Q4
tCES tCEH
Q1 Q2
tOE
tLZOE
D3
tCD
tLZC
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L , and CS2 = L
tHZC
tDHtDS
512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 19 - Rev 1.0
July 2005
K7M161835B
K7M163635B
PACKAGE DIMENSIONS
0.10 MAX
0~8
°
22.00
±
0.30
20.00
±
0.20
16.00
±
0.30
14.00
±
0.20
1.40
±
0.10
1.60 MAX
0.05 MIN
(0.58)
0.50
±
0.10
#1
(0.83) 0.50
±
0.10
100-TQFP-1420A (Lead and Lead free package)
0.65 0.30
±
0.10
0.10 MAX
+ 0.10
- 0.05
0.127
Units ; millimeters/Inches
