Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5663
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5663J)
• JANTX level (2N5663JX)
• JANTXV level (2N5663JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Power Transistor
• NPN silicon transistor
Features
• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 1031
• Reference document:
MIL-PRF-19500/454
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 300
Volts
Collector-Base Voltage VCBO 400
Volts
Emitter-Base Voltage VEBO 6
Volts
Collector Current, Continuous IC 2
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 1
5.7
W
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C PT 15
150
W
mW/°C
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N5663
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 300 Volts
Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 100 Ω 400
Volts
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA 6
Volts
Collector-Base Cutoff Current ICBO1
ICBO2
VCB = 300 Volts
VCB = 400 Volts
0.1
1.0
µA
mA
Collector-Emitter Cutoff Current ICES1
ICES2
VCE = 300 Volts
VCE = 300 Volts, TA = 150°C
0.2
100 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 50 mA, VCE = 2 Volts
IC = 500 mA, VCE = 5 Volts
IC = 1 A, VCE = 5 Volts
IC = 2 A, VCE = 5 Volts
IC = 500 mA, VCE = 5 Volts
TA = -55°C
25
25
15
5
10
75
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 400 mA
1.2
1.5 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 400 mA
0.4
0.8 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 100 mA,
f = 10 MHz 2 7
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 45
pF
Switching Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Saturated Turn-On Time tON I
C = 500 mA, VCC = 100 Volts 250 ns
Saturated Turn-Off Time tOFF I
C = 500 mA, VCC = 100 Volts 1200 ns