2SA1483
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1483
High Frequency Amplifier Applications
Video Amplifier Applications
High Speed SwitcHing Applications
High transition frequency: fT = 200 MHz (typ.)
Low collector output capacitance: Cob = 3.5 pF (typ.)
Complementary to 2SC3803
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 45 V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 200 mA
Continuous base current IB 50 mA
PC 500
Collector power dissipation PC
(Note 1)
1000
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
2SA1483
2006-11-09
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 45 V, IE = 0 0.1 μA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 μA
hFE (1)
(Note 3)
VCE = 1 V, IC = 10 mA 40 240
DC current gain
hFE (2) V
CE = 3 V, IC = 200 mA 20
Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA 0.3 V
Base-emitter saturation voltage VBE (sat) IC = 100 mA, IB = 10 mA 1.0 V
Transition frequency fT VCE = 10 V, IC = 10 mA 100 200 MHz
Input impedance (real part) Re (hie) VCE = 10 V, IE = 10 mA, f = 200 MHz 120
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3.5 5 pF
Turn-on time ton 40
Storage time tstg 250
Switching time
Fall time tf
30
ns
Note 3: hFE (1) classification R: 40 to 80, O: 70 to 140, Y: 120 to 240
Marking
W
Part No. (or abbreviation code)
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
50
200
OUTPUT
500
680
VCC
= 12 V
VBB
= 3 V
INPUT
0
10 V
1 μs
DUTY CYCLE 2%
2SA1483
2006-11-09
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
0 120 80 100 40 60
0
0.6
0.2
1.0
0.4
1.2
20 160140
0.8
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
Collector current IC (mA)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
hFE – IC
DC current gain hFE
0.1 10 100 30 0.3
300
1000
500
Common emitter
VCE = 3 V
10
3 1
100
30
50
Ta = 100°C
25
55
0.1
1
1 100 30 0.3
0.3
0.5
Common emitter
IC/IB = 10
0.1
3 10
3
5
Ta = 55°C
25
100
0
0 1
40
2 3 4 5 6
80
120
160
200 Common emitter
Ta = 25°C
IB = 0.2 mA
0.5
1.0
1.5
2.0
3.0
5.0
10
0
0
0 1
40
2 3 4 5 6
80
120
160
200 Common emitter
Ta = 100°C
IB = 0.2 mA
0.6
0
8.0
4.0
2.0
1.0
0
0 1
40
2 3 4 5 6
80
120
160
200 Common emitter
Ta = 55°C
IB = 0.5 mA
1.0
0
1.5
2.0
3.0
4.0
6.0
0.1
0.1
1 100 30 0.3
0.03
0.05
Common emitter
IC/IB = 10
0.01
3 10
0.3
0.5
Ta = 100°C
25
55
2SA1483
2006-11-09
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RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
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document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
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The information contained herein is presented only as a guide for the applications of our products. No
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occurring as a result of noncompliance with applicable laws and regulations.