HEXFET® Power MOSFET
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other applications.
Features
lAdvanced Process Technology
lNew Ultra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Applications
lElectric Power Steering (EPS)
lBattery Switch
lStart/Stop Micro Hybrid
lHeavy Loads
lDC-DC Applications
GDS
Gate Drain Source
TO-262
AUIRFSL8405
G
D
S
D
D2Pak
AUIRFS8405
S
D
G
D
V
DSS
40V
R
DS
(
on
)
t
yp
.1.9mΩ
max. 2.3mΩ
I
D (Silicon Limited)
193A
c
I
D (Package Limited)
120A
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
163
10lbf
x
in (1.1N
x
m)
°C
A
300
-55 to + 175
± 20
1.1
Max.
193
c
137
c
904
120
Base part number Package Type Standard Pack Complete Part Number
Form Quantity
AUIRFSL8405 TO-262 Tube 50 AUIRFSL8405
AUIRFS8405 D2Pak Tube 50 AUIRFS8405
Tape and Reel Left 800 AUIRFS8405TRL
Tape and Reel Right 800 AUIRFS8405TRR
1www.irf.com © 2013 International Rectifier April 30, 2013
AUTOMOTIVE GRADE AUIRFS8405
AUIRFSL8405
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2
AUIRFS/SL8405
Avalanche Characteristics
E
AS
(
Thermall
y
limited
)
Single Pulse Avalanche Energy
e
E
AS
(
tested
)
Single Pulse Avalanche Energy Tested Value
l
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case
kl
––– 0.92 °C/W
R
θJA
Junction-to-Ambient (PCB Mount)
j
––– 40
mJ
181
See Fig. 14, 15, 24a, 24b
247
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(
BR
)
DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆V
(
BR
)
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.026 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.9 2.3
V
GS( th)
Gate Threshold Voltage 2.2 3.0 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.3 ––– Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 100 ––– ––– S
Q
g
Total Gate Charge ––– 107 161
Q
g
s
Gate-to-Source Charge ––– 29 –––
Q
g
d
Gate-to-Drain ("Miller") Charge ––– 39 –––
Q
s
y
nc
Total Gate Charge Sync. (Q
- Q
g
d
) ––– 68 –––
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time ––– 128 –––
t
d(off)
Turn-Off Delay Time ––– 55 –––
t
f
Fall Time ––– 77 –––
C
iss
Input Capacitance ––– 5193 –––
C
oss
Output Capacitance ––– 754 –––
C
rss
Reverse Transfer Capacitance ––– 519 –––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 878 –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 1225 –––
mΩ
µA
nA
nC
ns
pF
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
GS
= 20V
V
GS
= -20V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
DS
=20V
V
GS
= 10V
g
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V
i
, See Fig. 11
I
D
= 100A
R
G
= 2.7Ω
V
GS
= 10V
g
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
d
V
GS
= 10V, I
D
= 100A
g
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 40V, V
GS
= 0V
V
DD
= 26V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
GS
= 0V, V
DS
= 0V to 32V
h
www.irf.com © 2013 International Rectifier April 30, 20133
AUIRFS/SL8405
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.036mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 100A, di/dt ≤ 1295A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
S
D
G
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
d
V
SD
Diode Forward Voltage ––– 0.9 1.3 V
dv/dt Peak Diode Recovery
f
––– 1.7 ––– V/ns
t
rr
Reverse Recovery Time ––– 44 ––– T
J
= 25°C V
R
= 34V,
––– 45 ––– T
J
= 125°C I
F
= 100A
Q
rr
Reverse Recovery Charge ––– 44 ––– T
J
= 25°C di/dt = 100A/µs
g
––– 46 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.9 ––– A T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
Conditions
ns
nC
A
–––
–––
–––
–––
193
c
904
www.irf.com © 2013 International Rectifier April 30, 2013
4
AUIRFS/SL8405
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 3 4 5 6 7 8 9
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 10V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 100A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 100A
www.irf.com © 2013 International Rectifier April 30, 20135
AUIRFS/SL8405
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.2 0.6 1.0 1.4 1.8 2.2
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
40
42
44
46
48
50
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 1.0mA
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Energy (µJ)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 17A
36A
BOTTOM 100A
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
Limited by package
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
ID, Drain Current (A)
Limited By Package
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6
AUIRFS/SL8405
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
160
180
200
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
www.irf.com © 2013 International Rectifier April 30, 20137
AUIRFS/SL8405
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt Fig. 21 - Typical Stored Charge vs. dif/dt
Fig 16. On-Resistance vs. Gate Voltage
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
0.0
2.0
4.0
6.0
8.0
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 100A
TJ = 25°C
TJ = 125°C
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate threshold Voltage (V)
ID = 100µA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
10
IRRM (A)
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
10
12
IRRM (A)
IF = 100A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
50
100
150
200
QRR (nC)
IF = 100A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
50
100
150
200
QRR (nC)
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
www.irf.com © 2013 International Rectifier April 30, 2013
8
AUIRFS/SL8405
Fig 22. Typical On-Resistance vs. Drain Current
0100 200 300 400 500
ID, Drain Current (A)
0
10
20
30
40
50
60
RDS(on), Drain-to -Source On Resistance (mΩ)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
www.irf.com © 2013 International Rectifier April 30, 20139
AUIRFS/SL8405
Fig 25a. Switching Time Test Circuit Fig 25b. Switching Time Waveforms
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 26a. Gate Charge Test Circuit Fig 26b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
www.irf.com © 2013 International Rectifier April 30, 2013
10
AUIRFS/SL8405
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFS8405
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
www.irf.com © 2013 International Rectifier April 30, 201311
AUIRFS/SL8405
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFSL8405
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
www.irf.com © 2013 International Rectifier April 30, 2013
12
AUIRFS/SL8405
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
www.irf.com © 2013 International Rectifier April 30, 201313
AUIRFS/SL8405
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Highest passing voltage.
Qualification Information
†
TO-262 N/A
D
2
PAK MSL1
Charged Device Model Class C5 (+/- 2000V)
††
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
RoHS Compliant Yes
ESD
Machine Model Class M3 (+/- 400V)
††
AEC-Q101-002
Human Body Model Class H1C (+/- 2000V)
††
AEC-Q101-001
www.irf.com © 2013 International Rectifier April 30, 2013
14
AUIRFS/SL8405
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105