AUIRFS8405 AUIRFSL8405 AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features l l l l l l l Advanced Process Technology New Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Applications l l l l l Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Applications Base part number 40V 1.9m 2.3m 193A ID (Package Limited) 120A TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right c D D S D G D2Pak AUIRFS8405 G Gate Package Type AUIRFSL8405 AUIRFS8405 VDSS RDS(on) typ. max. ID (Silicon Limited) S D G TO-262 AUIRFSL8405 D Drain S Source Complete Part Number Quantity 50 50 800 800 AUIRFSL8405 AUIRFS8405 AUIRFS8405TRL AUIRFS8405TRR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. Units c c 193 137 120 904 163 1.1 d A W 20 -55 to + 175 W/C V C 300 10lbf in (1.1N m) x x HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com (c) 2013 International Rectifier April 30, 2013 AUIRFS/SL8405 Avalanche Characteristics EAS (Thermally limited) EAS (tested) IAR EAR Single Pulse Avalanche Energy d Thermal Resistance Symbol R JC R JA e Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy 181 247 See Fig. 14, 15, 24a, 24b l d Parameter kl Junction-to-Case Junction-to-Ambient (PCB Mount) mJ A mJ Typ. Max. Units --- --- 0.92 40 C/W j Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Min. Typ. Max. Units 40 --- --- 2.2 --- --- --- --- --- --- --- 0.026 --- 1.9 2.3 3.0 3.9 --- 1.0 --- 150 --- 100 --- -100 2.3 --- V V/C m V A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 100A VDS = VGS, ID = 100A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V d g Dynamic @ TJ = 25C (unless otherwise specified) Symbol Parameter gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) 2 www.irf.com (c) 2013 International Rectifier Min. Typ. Max. Units 100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 107 29 39 68 14 128 55 77 5193 754 519 878 1225 --- 161 --- --- --- --- --- --- --- --- --- --- --- --- S nC ns Conditions VDS = 10V, ID = 100A ID = 100A VDS =20V VGS = 10V ID = 100A, VDS =0V, VGS = 10V VDD = 26V ID = 100A R G = 2.7 VGS = 10V VGS = 0V VDS = 25V = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V , See Fig. 11 VGS = 0V, VDS = 0V to 32V g g pF i h April 30, 2013 AUIRFS/SL8405 Diode Characteristics Symbol IS Parameter Min. Typ. Max. Units VSD dv/dt trr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM d f Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.036mH, RG = 50, IAS = 100A, VGS =10V. Part not recommended for use above this value. ISD 100A, di/dt 1295A/s, VDD V(BR)DSS, TJ 175C. 3 www.irf.com (c) 2013 International Rectifier c Conditions D MOSFET symbol --- --- 193 showing the A G integral reverse --- --- 904 S p-n junction diode. --- 0.9 1.3 V TJ = 25C, IS = 100A, VGS = 0V --- 1.7 --- V/ns TJ = 175C, IS = 100A, VDS = 40V --- 44 --- TJ = 25C VR = 34V, ns IF = 100A --- 45 --- TJ = 125C di/dt = 100A/s --- 44 --- TJ = 25C nC --- 46 --- TJ = 125C --- 1.9 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) g g Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. RJC value shown is at time zero. April 30, 2013 AUIRFS/SL8405 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 4.5V 60s PULSE WIDTH BOTTOM 100 4.5V 60s PULSE WIDTH Tj = 175C Tj = 25C 1 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 175C T J = 25C 10 VDS = 10V 60s PULSE WIDTH 1.0 ID = 100A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 8 9 Fig 3. Typical Transfer Characteristics 100000 VGS, Gate-to-Source Voltage (V) ID= 100A C oss = C ds + C gd Ciss Coss Crss 1000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 10000 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com (c) 2013 International Rectifier 0 20 40 60 80 100 120 140 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage April 30, 2013 AUIRFS/SL8405 1000 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 175C 100 T J = 25C 10 1000 100sec 1msec 100 Limited by package 10 10msec 1 VGS = 0V 0.1 1.0 0.2 0.6 1.0 1.4 1.8 0.1 2.2 ID, Drain Current (A) Limited By Package 150 100 50 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 200 50 100 50 Id = 1.0mA 48 46 44 42 40 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C ) T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 0.9 EAS , Single Pulse Avalanche Energy (mJ) 800 0.8 0.7 0.6 Energy (J) 10 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 1 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 0.5 0.4 0.3 0.2 0.1 0.0 ID 17A 36A BOTTOM 100A 700 TOP 600 500 400 300 200 100 0 -5 0 5 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 5 DC Tc = 25C Tj = 175C Single Pulse www.irf.com (c) 2013 International Rectifier 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent April 30, 2013 AUIRFS/SL8405 Thermal Response ( Z thJC ) C/W 10 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 200 180 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 14, 15 (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature 6 www.irf.com (c) 2013 International Rectifier April 30, 2013 8.0 4.5 ID = 100A VGS(th) , Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m ) AUIRFS/SL8405 6.0 4.0 T J = 125C 2.0 TJ = 25C 0.0 4.0 3.5 3.0 ID = 100A ID = 1.0mA 2.5 ID = 1.0A 2.0 1.5 1.0 4 6 8 10 12 14 16 18 20 -75 -50 -25 VGS, Gate -to -Source Voltage (V) Fig 16. On-Resistance vs. Gate Voltage 200 IF = 60A V R = 34V 8 IF = 60A V R = 34V TJ = 25C TJ = 125C TJ = 25C TJ = 125C 150 QRR (nC) 6 4 100 50 2 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/s) 400 600 800 1000 diF /dt (A/s) Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt 12 200 10 IF = 100A V R = 34V 8 TJ = 25C TJ = 125C IF = 100A V R = 34V TJ = 25C TJ = 125C 150 QRR (nC) IRRM (A) 25 50 75 100 125 150 175 Fig 17. Threshold Voltage vs. Temperature 10 IRRM (A) 0 TJ , Temperature ( C ) 6 100 4 50 2 0 0 0 200 400 600 800 1000 diF /dt (A/s) 7 Fig. 20 - Typical Recovery Current vs. dif/dt www.irf.com (c) 2013 International Rectifier 0 200 400 600 800 1000 diF /dt (A/s) Fig. 21 - Typical Stored Charge vs. dif/dt April 30, 2013 RDS(on), Drain-to -Source On Resistance ( m) AUIRFS/SL8405 60 VGS = 5.5V VGS = 6.0V VGS = 7.0V 50 VGS = 8.0V VGS =10V 40 30 20 10 0 0 100 200 300 400 500 ID, Drain Current (A) Fig 22. Typical On-Resistance vs. Drain Current 8 www.irf.com (c) 2013 International Rectifier April 30, 2013 AUIRFS/SL8405 Driver Gate Drive D.U.T + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01 tp I AS Fig 24a. Unclamped Inductive Test Circuit RD V DS Fig 24b. Unclamped Inductive Waveforms VDS 90% V GS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 25a. Switching Time Test Circuit tr t d(off) Fig 25b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V tf .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 26a. Gate Charge Test Circuit 9 www.irf.com (c) 2013 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 26b. Gate Charge Waveform April 30, 2013 AUIRFS/SL8405 D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRFS8405 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2013 International Rectifier April 30, 2013 AUIRFS/SL8405 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRFSL8405 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com (c) 2013 International Rectifier April 30, 2013 AUIRFS/SL8405 D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 12 www.irf.com (c) 2013 International Rectifier 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 April 30, 2013 AUIRFS/SL8405 Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 D2 PAK Machine Model N/A MSL1 Class M3 (+/- 400V) AEC-Q101-002 Human Body Model ESD Class H1C (+/- 2000V) AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Highest passing voltage. 13 www.irf.com (c) 2013 International Rectifier April 30, 2013 AUIRFS/SL8405 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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