MBR4045PT-E3/45 - Vishay [General Semiconductor]

MBR4035PT thru MBR4060PT

Vishay General Semiconductor

Document Number: 88679

Revision: 25-Mar-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Dual Common-Cathode Schottky Rectifier

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-247AD (TO-3P)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV) 40 A

VRRM 35 V to 60 V

IFSM 400 A

VF0.60 V, 0.62 V

TJ max. 150 °C

PIN 1

PIN 3 CASE

PIN 2

TO-247AD (TO-3P)

Note:

(1) 2.0 µs pulse width, f = 1.0 kHz

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT

Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V

Maximum working peak reverse voltage VRWM 35 45 50 60 V

Maximum DC blocking voltage VDC 35 45 50 60 V

Maximum average forward rectified current at TC = 125 °C IF(AV) 40 A

Peak forward surge current, 8.3 ms single

half sine-wave superimposed on rated load per diode IFSM 400 A

Peak repetitive reverse surge current per diode (1) IRRM 2.0 1.0 A

Voltage rate of change at (rated VR) dV/dt 10 000 V/µs

Operating junction temperature range TJ - 65 to + 150 °C

Storage temperature range TSTG - 65 to + 175 °C

MBR4035PT thru MBR4060PT

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88679

Revision: 25-Mar-08

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT

Maximum instantaneous

forward voltage per diode (1)

IF = 20 A,

IF = 40 A,

TC = 25 °C

TC = 125 °C

TC = 25 °C

TC = 125 °C

0.70

0.60

0.80

0.75

0.72

0.62

Maximum instantaneous

reverse current at rated DC

blocking voltage per diode (1)

TC = 25 °C

TC = 125 °C IR 1.0

100 mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT

Maximum thermal resistance from junction to case per diode RθJC 1.2 °C/W

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube

Figure 1. Forward Current Derating Curve

050 100 150

Average Forward Current (A)

Case Temperature (°C)

Resistive or Inductive Load

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

110 100

100

200

300

400

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

TJ = TJ Max.

8.3 ms Single Half Sine-Wave

MBR4035PT thru MBR4060PT

Vishay General Semiconductor

Document Number: 88679

Revision: 25-Mar-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

00.2 0.4 0.6 0.81.0 1.2

0.01

0.1

100

MBR4035PT - MBR4045PT

MBR4050PT & MBR4060PT

TJ = 150 °C

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

020 40 60 80100

0.001

0.01

0.1

100

= 125 °C

= 25 °C

= 75 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (mA)

MBR4035PT - MBR4045PT

MBR4050PT & MBR4060PT

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

0.1 110 100

100

1000

10 000

Reverse Voltage (V)

Junction Capacitance (pF)

MBR4035PT - MBR4045PT

MBR4050PT & MBR4060PT

= 25 °C

f = 1.0 MHz

sig

= 50 mVp-p

0.01 0.1 110 100

0.1

100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

PIN 1

PIN 3 CASE

PIN 2

TO-247AD (TO-3P)

0.245 (6.2)

0.225 (5.7)

0.645 (16.4)

0.625 (15.9) 0.323 (8.2)

0.313 (7.9)

0.142 (3.6)

0.138 (3.5)

0.170

(4.3)

0.086(2.18)

0.076 (1.93)

0.160 (4.1)

0.140 (3.5)

0.225 (5.7)

0.205 (5.2)

0.127 (3.22)

0.117 (2.97)

0.048(1.22)

0.044 (1.12)

0.795 (20.2)

0.775 (19.6)

0.840 (21.3)

0.820 (20.8)

1 2 3

0.078 (1.98) REF.

0.203 (5.16)

0.193 (4.90)

10° TYP.

Both Sides

30° 10

1° REF.

Both Sides

0.030 (0.76)

0.020 (0.51)

0.118 (3.0)

0.108 (2.7)

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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