ES1DFL - ES1JFL
Taiwan Semiconductor
1 Version:C1812
1A, 200V - 600V Surface Mount Super Fast Rectifier
FEATURES
● Glass passivated junction chip
● Ideal for automated placement
● Low profile package
● Low power loss, high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer,
automotive and telecommunication.
MECHANICAL DATA
● Case: SOD-123FL
● Molding compound meets UL 94 V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 16 mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
1
A
VRRM
200 - 600
V
IFSM
30
A
TJ MAX
150
°C
Package
SOD-123FL
Configuration
Single dice
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
ES1DFL
ES1GFL
ES1JFL
UNIT
Marking code on the device
EDF
EGF
EJF
Repetitive peak reverse voltage
VRRM
200
400
600
V
Reverse voltage, total rms value
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
Forward current
IF(AV)
1
A
Surge peak forward current, 8.3 ms single half sine-
wave superimposed on rated load per diode
IFSM
30
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
ES1DFL - ES1JFL
Taiwan Semiconductor
2 Version:C1812
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction to Lead Thermal Resistance
RӨJL
35
°C/W
Junction to Ambient Thermal Resistance
RӨJA
85
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage (1)
ES1DFL
IF = 1A, TJ = 25°C
VF
-
1.0
V
ES1GFL
-
1.3
V
ES1JFL
-
1.7
V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
5
µA
TJ = 125°C
-
100
µA
Junction capacitance
1 MHz, VR=4V
CJ
8
-
pF
Reverse recovery time
IF=0.5A , IR=1.0A
IRR=0.25A
trr
-
35
nS
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
ES1xFL
(Note1)
RV
G
SOD-123FL
3,000 / 7" Plastic reel
RQ
SOD-123FL
10,000 / 13" Paper reel
Notes:
1. "x" defines voltage from 200V (ES1DFL) to 600V (ES1JFL)
2. Whole series with green compound
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
ES1JFL RVG
ES1JFL
RV
G
Green compound
ES1DFL - ES1JFL
Taiwan Semiconductor
3 Version:C1812
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
Fig3. Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
0
0.2
0.4
0.6
0.8
1
1.2
025 50 75 100 125 150
Resistive or
inductive load
0
2
4
6
8
10
12
14
16
18
20
0.1 1 10 100
f=1.0MHz
Vsig=50mVp-p
0.01
0.1
1
10
100
020 40 60 80 100
TJ=125°C
TJ=25°C
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Pulse width=300μs
1% duty cycle
ES1JFL
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (°C)
REVERSE VOLTAGE (V)
ES1DFL - ES1JFL
Taiwan Semiconductor
4 Version:C1812
0
5
10
15
20
25
30
110 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
8.3ms single half sine wave
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig5. Maximum Non-repetitive Forward Surge Current
Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram
ES1DFL - ES1JFL
Taiwan Semiconductor
5 Version:C1812
PACKAGE OUTLINE DIMENSIONS
SOD-123FL
MARKING DIAGRAM
P/N = Marking Code
YW = Date Code
F = Factory Code
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
0.80
1.15
0.031
0.045
B
1.70
2.10
0.067
0.083
C
2.60
3.10
0.102
0.122
D
0.88
1.35
0.035
0.053
E
0.10
0.30
0.004
0.012
F
0.30
0.90
0.012
0.035
G
3.45
3.95
0.136
0.156
ES1DFL - ES1JFL
Taiwan Semiconductor
6 Version:C1812
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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