© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 1700 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 42 A
IC90 TC = 90°C 21 A
ICM TC = 25°C, 1ms 265 A
SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 84 A
(RBSOA) Clamped Inductive Load 1360 V
TSC VGE = 15 V, VCES = 1200V, TJ = 125°C
(SCSOA) RG = 10Ω, non repetitive 10 µs
PCTC = 25°C 357 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS98939A(11/12)
IXBT42N170A
IXBH42N170A
VCES = 1700V
IC90 = 21A
VCE(sat) ≤≤
≤≤
≤ 6.0V
tfi = 20ns
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Features
zHigh Blocking Voltage
zInternational Standard Packages
zAnti-Parallel Diode
zLow Conduction Losses
Advantages
zLow Gate Drive Requirement
zHigh Power Density
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zUninterruptible Power Supplies (UPS)
zAC Motor Drives
zCapacitor Discharge Circuits
zAC Switches
G = Gate C = Collector
E = Emiiter Tab = Collector
TO-247 (IXBH)
G
EC (Tab)
C
TO-268 (IXBT)
E
G
C (Tab)
Preliminary Technical Information
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250µA, VGE = 0V 1700 V
VGE(th) IC = 750µA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 • VCES, VGE = 0V 50 µA
TJ = 125°C 1.5 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = IC90, VGE = 15V, Note 1 5.2 6.0 V
TJ = 125°C 5.3 V
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N170A
IXBH42N170A
Note 1: Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = IC90, VGE = 0V 5.0 V
trr 330 ns
IRM 15 A
IF = 25A, VGE = 0V, -diF/dt = 50A/µs
VR = 100V, VGE = 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = IC90, VCE = 10V, Note 1 14 23 S
Cies 3920 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 275 pF
Cres 107 pF
Qg(on) 188 nC
Qge IC = IC90, VGE = 15V, VCE = 0.5 • VCES 23 nC
Qgc 80 nC
td(on) 19 ns
tri 17 ns
Eon 3.43 mJ
td(off) 200 ns
tfi 20 ns
Eoff 0.43 mJ
td(on) 19 ns
tri 14 ns
Eon 5.40 mJ
td(off) 226 ns
tfi 82 ns
Eoff 0.83 mJ
RthJC 0.35 °C/W
RthCS TO-247 0.21 °C/W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Diode Type = DH40-18A
Note 2
Inductive load, TJ = 125°C
IC = IC90, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Diode Type = DH40-18A
Note 2
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT42N170A
IXBH42N170A
Fi g . 1. Ou tp u t C h ar ac ter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0123456789101112
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
12
V
10
V
7
V
6
V
8
V
9
V
Fi g . 2. Exten d ed Ou tp u t Char ac ter i st i cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15
V
12
V
11
V
8
V
9
V
10
V
7
V
6
V
Fi g . 3. Ou tp u t C h ar ac ter i sti cs @ T
J
= 125º C
0
10
20
30
40
50
60
70
80
012345678910111213
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
12
V
10
V
9V
7
V
5
V
6
V
8
V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15
V
I
C
= 84
A
I
C
= 42
A
I
C
= 21
A
Fi g . 5. Co l l ecto r -t o -Emi tter Vo l tag e
vs. Gate- to -Emi tter Vo l tag e
4
6
8
10
12
14
16
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 84
A
T
J
= 25ºC
42
A
21
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N170A
IXBH42N170A
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 102030405060708090100
IC - Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 11. R ever se-B i as Safe Oper ati n g Area
0
10
20
30
40
50
60
70
80
90
200 400 600 800 1000 1200 1400 1600 1800
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 10Ω
dv / dt < 10V / ns
Fi g . 12. Maximu m Tran si en t Th er mal I mp ed an ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z(th)JC - ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
VGE - Volts
V
CE
= 850V
I
C
= 42A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MH
z
Cies
Coes
Cres
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
220
024681012
VF - Volts
IF - Amperes
T
J
= 125ºC
T
J
J
= 25ºC
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT42N170A
IXBH42N170A
Fig. 18. Inductive Turn-off
Swit chin g Times vs . Gate R esi st an ce
0
20
40
60
80
100
120
140
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
100
150
200
250
300
350
400
450
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
VGE
= 15V
VCE
= 850V
I
C
= 84
A
I
C
= 42
A
Fig. 15. Inductive Switching Energy Loss vs.
Gate Re si stance
0
1
2
3
4
5
6
7
12345678910
R
G
- Ohms
E
off
- MilliJoules
4
8
12
16
20
24
28
32
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 850V
I
C
= 42
A
I
C
= 84
A
Fig. 16. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
20 30 40 50 60 70 80
I
C
- Amperes
Eoff - MilliJoules
0
5
10
15
20
25
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 17 . I n d u cti ve Sw i tch i n g En er gy L o ss vs.
Junction Temperature
0
1
2
3
4
5
6
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
4
8
12
16
20
24
28
Eon - MilliJoules
I
C
= 84
A
I
C
= 42
A
E
off
E
on
- - - -
R
G
= 1Ω , V
GE
= 15V
V
CE
= 850V
Fig. 13. Forward-Bias Safe Operating Area @ T
C
= 25 ºC
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limit
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
DC
25µs
Fig. 14. Forward-Bias Safe Operating Area @ T
C
= 75ºC
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limit
T
J
= 150ºC
T
C
= 75ºC
Single Pulse DC
25µs
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N170A
IXBH42N170A
IXYS REF: B_42N170A(7N)11-12-12
Fig. 22. Inductive Turn-on Switching Times
vs. C o l l ecto r C u r r en t
0
20
40
60
80
100
120
20 30 40 50 60 70 80
I
C
- Amperes
t
r i
- Nanoseconds
16
18
20
22
24
26
28
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 125ºC
Fig. 23. Inductive T urn-on
Switching Times vs. Junction Temperature
0
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
18
19
20
21
22
23
24
25
26
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 42
A
I
C
= 84
A
Fig. 21. Inductive Turn-on Switching Times
vs. Gate R esi st ance
0
20
40
60
80
100
120
140
160
12345678910
R
G
- Ohms
t
r i
- Nanoseconds
14
18
22
26
30
34
38
42
46
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 42
A
I
C
= 84
A
Fi g . 19. I n d u cti ve Tu r n -off
Switch i n g Times vs. Co l l ect o r C u r r en t
0
20
40
60
80
100
120
140
20 30 40 50 60 70 80
I
C
- Amperes
t
f i
- Nanoseconds
120
140
160
180
200
220
240
260
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 20. I n d u cti ve Turn -o ff
Switch i n g Times vs. Ju n cti o n Temp era tu r e
20
40
60
80
100
120
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 42A, 84
A
