TO-220 Plastic-Encapsulated Transistors
3DD13005 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.5 W (Tamb=25℃)
Collector current
ICM: 4 A
Collector-base voltage
V(BR)CBO: 700 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base br eakdown voltage V(BR)CBO Ic= 1000µA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V
E mitter-base breakdow n vol t age V(BR)EBO I
E= 1000µA, IC=0 9 V
Collector cut-off current ICBO V
CB= 700V, IE=0 1000 µA
Collector cut-off current ICEO V
CE= 400V, IB=0 100 µA
Emitte r c u t-of f c u rren t IEBO V
EB=9V, IC=0 1000 µA
DC current gain hFE V
CE= 5V, IC= 1000mA 10 40
Collector-emitter saturati on voltage VCE (sa t) I C=2000mA , IB=500 mA 0.6 V
Base-emitter satu ration voltage VBE (sat) IC=2000mA, IB= 500mA 1.6 V
Transition Frequency f T VCE=10 V, IC=500 mA
f = 1MHz 5 MHz
Fall time t f 0.9 µs
Storage time t s
IB1=-IB2=0.4A, IC=2A
VCC=120V 4 µs
CLASSIFICATION OF hFE
Rank
Range 10-15 15-20 20-25 25-30 30-35 35-40
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
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