To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old com pany name remains in this docum ent, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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Rev.5.00 Sep 07, 2005 page 1 of 3
HAT2108R
Silicon N Channel Power MOS FET
High Speed Power Switching REJ03G1188-0500
(Previous : AD E- 208-1 574 C)
Rev.5.00
Sep 07, 2005
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
G
D
S
D
G
D
S
D
MOS1 MOS2
1
2
78
4
56
3
1234
5
6
7
8
HAT2108R
Rev.5.00 Sep 07, 2005 page 2 of 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 28 V
Gate to source voltage VGSS ±12 V
Drain current ID 11 A
Drain peak current ID (pulse) Note 1 88 A
Body-drain diode reverse drain current IDR 11 A
Channel dissipation Pch Note 2 2 W
Channel dissipation Pch Note 3 3 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 28 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±12 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±10 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 28 V, VGS = 0
Gate to source cutoff volta ge VGS (off) 0.4 — 1.4 V VDS = 10 V, ID = 1 mA
RDS (on) — 12 15 mΩ I
D = 5.5 A, VGS = 4 V Note 4 Static drain to source on state resistance RDS (on) — 15 22 mΩ I
D = 5.5 A, VGS = 2.5 V Note 4
Forward transfer admittance |yfs| 17 28 — S ID = 5.5 A, VDS = 10 V Note 4
Input capacitan ce Ciss — 2200 — pF
Output capacitance Coss — 400 — pF
Reverse transfer capacitance Crss — 240 — pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge Qg — 16 — nC
Gate to source charge Qgs — 5.2 — nC
Gate to drain charge Qgd — 4.8 — nC
VDD = 10 V
VGS = 4 V
ID = 11 A
Turn-on delay time td (on) — 30 — ns
Rise time tr — 35 — ns
Turn-off delay time td (off) — 70 — ns
Fall time tf — 25 — ns
VGS = 4 V, ID = 5.5 A
VDD ≅ 10 V
RL = 1.81 Ω
Rg = 4.7 Ω
Body-drain diode forward voltage VDF — 0.85 1.11 V IF = 11 A, VGS = 0 Note 4
Body-drain diode reverse recovery time trr — 40 — ns IF = 11 A, VGS = 0
diF/dt = 50 A/µs
Note: 4. Pulse test
HAT2108R
Rev.5.00 Sep 07, 2005 page 3 of 3
Package Dimensions
P-SOP8-3.95 × 4.9-1.27 0.085g
MASS[Typ.]
FP-8DAVPRSP0008DD-D
RENESAS CodeJEITA Package Code Package Name
A
85
14
F
b
p
c
Detail F
Terminal cross section
1.27
1.08
0.40
L
1
0.60
0.25x
0.460.400.34
0.10
b
p
b
1
c
1
0.250.200.15
MaxNomMin
Dimension in Millimeters
Symbol
Reference
5.34.90D
3.95E
0.14
A
2
6.206.105.80
0.25
1.75
A
0.75Z
L
8
°
0
°
c
1.27e
0.1y
H
E
A
1
D
*
1
*
2
E
H
E
*
3
xM
b
p
e
Z(Ni/Pd/Au plating)
2.
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Index mark
A
1
L
1
L
Detail F
y
Ordering Information
Part Name Quantity Shipping Container
HAT2108R-EL-E 2500 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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