CJD340 NPN
CJD350 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD340 and CJD350
are complementary silicon power transistors manufactured
in a surface mount package, and designed for high
voltage general purpose applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 3.0 V
Continuous Collector Current IC 500 mA
Peak Collector Current ICM 750 mA
Power Dissipation PD 15 W
Power Dissipation (TA=25°C) PD 1.56 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 8.33 °C/W
Thermal Resistance ΘJA 80.1 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=300V 100 μA
ICEO V
CE=300V 100 μA
IEBO V
EB=3.0V 100 μA
BVCEO I
C=1.0mA 300 V
VCE(SAT) I
C=100mA, IB=10mA (CJD340) 1.0 V
VCE(SAT) I
C=100mA, IB=10mA (CJD350) 2.6 V
VBE(ON) V
CE=10V, IC=1.0A (CJD340) 1.5 V
VBE(ON) V
CE=10V, IC=1.0A (CJD350) 2.0 V
hFE V
CE=10V, IC=50mA 30 240
fT V
CE=10V, IC=50mA, f=10MHz 10 MHz
DPAK CASE
R5 (11-June 2013)
www.centralsemi.com
CJD340 NPN
CJD350 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R5 (11-June 2013)
CJD340 NPN
CJD350 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
NPN TYPICAL ELECTRICAL CHARACTERISTICS
R5 (11-June 2013)
www.centralsemi.com
CJD340 NPN
CJD350 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
PNP TYPICAL ELECTRICAL CHARACTERISTICS
R5 (11-June 2013)
www.centralsemi.com
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(001)
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