Hyperfast Diode 75 A, 1200 V RHRG75120 Description The RHRG75120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling / clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features * * * * * www.onsemi.com CATHODE (BOTTOM SIDE METAL) CATHODE Hyperfast Recovery, trr = 100 ns (@ IF = 75 A) Max Forward Voltage, VF = 3.2 V (@ TC = 25C) 1200 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb-Free and is RoHS Compliant ANODE TO-247-2LD CASE 340CL MARKING DIAGRAM Applications * Switching Power Supplies * Power Switching Circuits * General Purpose $Y&Z&3&K RHRG75120 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 1200 V Working Peak Reverse Voltage VRWM 1200 V VR 1200 V Average Rectified Forward Current @ TC = 42C IF(AV) 75 A Repetitive Peak Surge Current (Square Wave, 20 kHz) IFRM 150 A Non-Repetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) IFSM 500 A PD 190 W EAVL 50 mJ TJ, TSTG -65 to +175 C DC Blocking Voltage Maximum Power Dissipation Avalanche Energy (See Figures 7 and 8) Operating and Storage Temperature A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Maximum Thermal Resistance, Junction to Case RqJC 0.8 C/W February, 2020 - Rev. 3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code K Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2001 $Y &Z &3 &K RHRG75120 1 Publication Order Number: RHRG75120/D RHRG75120 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Shipping RHRG75120 RHRG75120 TO-247-2L 450 / Tube ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit VF Instantaneous Forward Voltage (Pulse Width = 300 ms, Duty Cycle = 2%) IF = 75 A IF = 75 A, TC = 150C - - - - 3.2 2.6 V IR Instantaneous Reverse Current VR = 1200 V VR = 1200 V, TC = 150C - - - - 250 2 mA mA Trr Reverse Recovery Time (See Figure 6), Summation of ta + tb IF = 1 A, dIF/dt = 100 A/ms IF = 75 A, dIF/dt = 100 A/ms - - - - 85 100 ns ta Time to Reach Peak Reverse Current (See Figure 6) IF = 75 A, dIF/dt = 100 A/ms - 60 - ns tb Time from Peak IRM to Projected Zero Crossing of IRM Based on a Straight Line from Peak IRM through 25% of IRM (See Figure 6) IF = 75 A, dIF/dt = 100 A/ms - 25 - ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 RHRG75120 TYPICAL PERFORMANCE CURVES 400 1000 IR, Reverse Current (mA) IF, Forward Current (A) 175C 175C 100 100C 10 25C 100 100C 10 1 25C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 4.5 0 200 VF, Forward Voltage (V) IF(AV), Average Forward Current (A) t, Time (ns) Trr 60 ta 40 tb 1 10 IF, Forward Current (A) 1000 1200 80 80 0 800 Figure 2. Reverse Current vs. Reverse Voltage TC = 25C, dIF/dt = 100 A/ms 20 600 VR, Reverse Voltage (V) Figure 1. Forward Current vs. Forward Voltage 100 400 60 DC 40 SQ. WAVE 20 0 80 25 50 75 100 125 150 TC, Case Temperature (C) Figure 3. Trr, ta and tb Curves vs. Forward Current Figure 4. Current Derating Curve www.onsemi.com 3 175 RHRG75120 TEST CIRCUITS AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L DUT RG VGE CURRENT SENSE dIF dt trr ta 0 + - IGBT t1 IF VDD 0.25 IRM IRM t2 Figure 6. Trr Waveforms and Definitions Figure 5. Trr Test Circuit IMAX = 1.6 A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) CURRENT SENSE L tb VAVL R + VDD IL IL I V Q1 DUT VDD - t0 t1 t2 t Figure 8. Avalanche Current and Voltage Waveforms Figure 7. Avalanche Energy Test Circuit www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO-247-2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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