BD241B - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

 

. . . designed for use in general purpose amplifier and switching applications.

•Collector–Emitter Saturation Voltage —

VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C

•High Current Gain — Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

•Compact TO–220 AB Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

BD241B

BD242B

ÎÎÎÎ

BD241C

BD242C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCES

ÎÎÎÎ

115

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

3.0

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.32

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

3.125

ÎÎÎ

C/W

00 20 40 60 80 100 120 140 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD241B/D

 Motorola, Inc. 1995









3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80, 100 VOLTS

40 WATTS

*Motorola Preferred Device



CASE 221A–06

TO–220AB





REV 7

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min.

ÎÎÎÎ

Max.

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage1

(IC = 30 mAdc, IB = 0) BD241B, BD242B

BD241C, BD242C

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) BD241B, BD241C, BD242B, BD242C

ÎÎÎÎ

ICEO

ÎÎÎÎ

0.3

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0) BD241B, BD242B

(VCE = 100 Vdc, VEB = 0) BD241C, BD242C

ÎÎÎÎ

ICES

ÎÎÎÎ

200

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 600 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

1.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain – Bandwidth Product2

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎ

1Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

2fT = |hfe| • ftest.

2.0

0.03 IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

1.0

0.7

0.5

0.3

0.1

0.07

0.02 0.05 0.1 0.3 0.5 0.7 1.0 3.0

td @ VBE(off) = 2.0 V

IC/IB = 10

TJ = 25

tr @ VCC = 30 V

tr @ VCC = 10 V

0.07

0.03

0.05

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time

APPROX

+ 11 V

TURN-ON PULSE

Vin 0

VEB(off)

APPROX – 9.0 V

TURN-OFF PULSE

Vin

APPROX

+ 11 V

VCC

SCOPE

Cjd

Ceb

– 4.0 V

7.0 ns

100

500

15 ns

DUTY CYCLE

[

2.0%

Vin

   

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

JC (t) = r(t) R

JC = 3.125

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

SECOND BREAKDOWN

LIMITED @ TJ

150

THERMAL LIMITATION @ TC = 25

BONDING WIRE LIMITED

CURVES APPLY BELOW

RATED VCEO

5.0

Figure 5. Active Region Safe Operating Area

IC, COLLECTOR CURRENT (AMP)

5.0

1.0

0.1 10 20 50 100

BD241B, BD242B

BD241C, BD242C

5.0 ms 100

1.0 ms

0.2

2.0

0.5

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C, TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

3.0

0.03

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

tf @ VCC = 30 V

t, TIME ( s)

2.0

1.0

0.5

0.3

0.2

0.1

0.05

0.03 0.05 0.07 0.1 0.2 0.5 1.0 2.0 3.0

tf @ VCC = 10 V

IB1 = IB2

IC/IB = 10

′

= ts – 1/8 tf

TJ = 25

′

0.3 0.7

0.07

0.7

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 3.0 5.0 20 30 40100.2 0.3 0.5

CAPACITANCE (pF)

200

100

TJ = + 25

Ceb

Ccb

   

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

500

0.03

5.0 0.05 0.07 0.1 0.3 0.5 1.0 3.0

100

300

TJ = 150

–55

VCE = 2.0 V

0.7

7.0

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

1.4

0.003

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.01 0.020.03 0.1 0.2 0.5 1.0 2.0 3.0

0.8

0.6

0.4

0.2

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

2.0

1.0

Figure 10. “On” Voltages

IB, BASE CURRENT (mA)

02.0 5.0 10 20 50 100 200 500 1000

1.6

1.2

0.8

0.4

IC = 0.3 A

TJ = 25

1.0 A 3.0 A

hFE, DC CURRENT GAIN

+2.5

0.003

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.01 0.02 0.05 0.1 0.2 0.3 1.0 2.0 3.0

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0

+1.5

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

VB FOR VBE

VC FOR VCE(sat)

*APPLIES FOR IC/IB

≤

5.0

TJ = – 65

C TO + 150

103

–0.4

Figure 12. Collector Cut–Off Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

100

10–1

, COLLECTOR CURRENT ( A)

10–2

10–3 –0.3 –0.2 –0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

ICES

107

Figure 13. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (

20 40 60 80 100 120 140 160

106

105

104

103

102

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

≈

ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

0.005 0.30.05

1.2

1.0

VBE @ VCE = 2.0 V

+1.0

0.50.005

IC = 2 x ICES

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

   

6 Motorola Bipolar Power Transistor Device Data

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BD241B/D

*BD241B/D*

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