2012-03-14
Page 1
Rev 1.2 BSL211SP
OptiMOS
-P Small-Signal-Transistor Product Summary
VDS -20 V
RDS
(
on
)
67 mΩ
ID-4.7 A
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
P-TSOP6-6
5
6
4
1
3
2
Gate
pin 3
Drain
pin 1,2,
Source
pin 4
5,6
Marking
sPB
Type Package Tape and reel
BSL211SP P-TSOP6-6 L6327: 3000pcs/r.
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-4.7
-3.8
A
Pulsed drain current
T
A
=25°C
I
D puls
-18.8
Avalanche energy, single pulse
I
D
=-4.7 A , V
DD
=-10V, R
GS
=25Ω
EAS 26 mJ
Reverse diode dv/dt
I
S
=-4.7A, V
DS
=-16V, di/dt=200A/µs, T
jmax
=150°C
dv/dt-6 kV/µs
Gate source voltage VGS ±12 V
Power dissipation
T
A
=25°C
Ptot 2W
Operating and storage temperature T
j
, Tst
g
-55... +150 °C
IEC climatic category; DIN IEC 68-1
55/150/56
• Pb-free lead plating; RoHS compliant
•QualifiedaccordingtoAECQ101
2012-03-14
Page 2
Rev 1.2 BSL211SP
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 50 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
230
62.5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=-250µA
V(BR)DSS -20 - - V
Gate threshold voltage, VGS = VDS
ID=-25µA
VGS(th) -0.6 -0.9 -1.2
Zero gate voltage drain current
VDS=-20V, VGS=0, Tj=25°C
VDS=-20V, VGS=0, Tj=150°C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS=-12V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-2.5V, ID=-3.7A
RDS(on) - 94 110 mΩ
Drain-source on-state resistance
VGS=-4.5, ID=-4.7A
RDS(on) - 54 67
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤ 5 sec.
2012-03-14
Page 3
Rev 1.2 BSL211SP
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs çVDSç≥2*çIDç*RDS(on)max
ID=-3.8A
6.2 12.4 - S
Input capacitance Ciss VGS=0, VDS=-15V,
f=1MHz
- 654 - pF
Output capacitance Coss - 241 -
Reverse transfer capacitance Crss - 197 -
Turn-on delay time td
(
on
)
VDD=-10V, VGS=-4.5V,
ID=-1A, RG=6Ω
- 8.7 13 ns
Rise time tr- 13.9 21
Turn-off delay time td
(
off
)
- 25 37.3
Fall time tf- 23.3 35
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=-10V, ID=-4.7A - -1.3 -2 nC
Gate to drain charge Q
d- -4.7 -7
Gate charge total QgVDD=-10V, ID=-4.7A,
VGS=0 to -4.5V
- -8.3 -12.4
Gate plateau voltage V
(p
lateau
)
VDD=-10V, ID=-4.7A - -2 - V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - -2 A
Inverse diode direct current,
pulsed ISM - - -18.8
Inverse diode forward voltage VSD VGS=0, |IF| = |ID|- -0.94 -1.4 V
Reverse recovery time trr VR=-10V, |IF| = |lD|,
diF/dt=100A/µs
- 20.6 25.8 ns
Reverse recovery charge Qrr - 6.3 7.9 nC
2012-03-14
Page 4
Rev 1.2 BSL211SP
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2 BSL211SP
Ptot
2 Drain current
ID = f (TA)
parameter: |VGS|≥ 4.5 V
0 20 40 60 80 100 120 °C 160
TA
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
A
-5.5 BSL211SP
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 -1 -10 0 -10 1 -10 2
VVDS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSL211SP
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
tp = 41.0µs
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W BSL211SP
ZthJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2012-03-14
Page 5
Rev 1.2 BSL211SP
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
012345678V10
- VDS
0
5
10
15
20
A
30
- ID
Vgs = -2V
Vgs = -2.3V
Vgs = -2.5V
Vgs = -3.5V
Vgs = -3V
Vgs = -4V
Vgs = -4.5V
Vgs = -5.5V
Vgs = -7V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 5 10 15 20 A30
- ID
0
0.025
0.05
0.075
0.1
0.125
0.15
Ω
0.2
RDS(on)
Vgs = -2.3V
Vgs = -2.5V
Vgs = -3V
Vgs = -3.5V
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5.5V
Vgs = - 7V
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x|ID| x RDS(on)max
parameter: tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4 2.8 V3.6
- VGS
0
4
8
12
16
20
24
A
32
- ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
0 4 8 12 16 20 24 A32
- ID
0
3
6
9
12
15
18
S
24
gfs
2012-03-14
Page 6
Rev 1.2 BSL211SP
9 Drain-source on-resistance
RDS(on) = f(Tj)
parameter: ID = -4.7 A, VGS = -4.5 V
-60 -20 20 60 100 °C 160
Tj
40
50
60
70
mΩ
90
RDS(on)
typ.
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = -25 µA
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
V
1.4
- VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
0 5 10 V20
- VDS
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-1
-10
0
-10
1
-10
2
-10
A
BSL211SP
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2012-03-14
Page 7
Rev 1.2 BSL211SP
13 Typ. avalanche energy
EAS = f (Tj), par.: ID = -4.7 A
VDD = -10 V, RGS = 25 Ω
25 50 75 100 °C 150
Tj
0
5
10
15
20
mJ
30
EAS
14 Typ. gate charge
|VGS| = f (QGate)
parameter: ID = -4.7 A pulsed
0 2 4 6 8 10 12 14 nC 18
|QGate|
0
1
2
3
4
5
6
7
8
9
10
V
12
- VGS
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
-18
-18.5
-19
-19.5
-20
-20.5
-21
-21.5
-22
-22.5
-23
-23.5
V
-24.5 BSL211SP
V(BR)DSS
BSS308P
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
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contact the nearest Infineon Technologies Office (www.infineon.com
).
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on the types in question, please contact the nearest Infineon Technologies Office.
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intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
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BSL211SP
 page 82012-03-14