E-Line Transistors SILICON TRANSISTORS Applications Chart 150 BA__100pA tmA 10mA___100mA 14 509 The wide diversity of 7 rx302 ,502 li ion f r i ZTX 300, $00 app! icat $ fo which Pa a L CAC E-Line plastic encapsulated 100 elx30us Sy fn 200 transistors are suitable is 4 \ \ i ma Mee Aes 4 fy (MHz) shown on the diagram. r v \ Additional types designed for more 50 LZ S| \ 100 specialized purposes are listed TY Y Yo \ 4 below: = ah 80 ZTX304 (BCW 18) ZTX 504 (BCW 19) Voeo 217X303 (BCW 16) Z1X503 (BCW 17) 40 ZTX301, 302 (BCW 12, 14) ZTX501, 502 (BCW 13, 15) L . 30 ge ve ZTX300 (BCW 10) e v 2TX500 (BCW 11) 20 MEDIUM LEVEL AC and DC Amps, / / Driver Stages, Relay Drivers. A J Dissipation 10 Ci Low LEVEL \, (All types) SS Suitches, SS 300 mW Choppers. 0 Os 10HA 100A mA 10mA 100mA 1A 0% | Vegisar) | 03 k= 101g 7] 0-2 ,. Z| oF ba eee 0 Type Application Competitive Type | Type Application Competitive Type ZTX330, BCW20 | n-p-n low level, low 2N3707 zTx c noise. 107 BC107 ZTX1 -p-n hi i noi ZTX331, BCW22 | n-p-n low level, low 2N929 ST X08 } npn high gain, low noise BC i108 noise. ZTX510, BSV33 p-n-p switching TIS5O - ZTX511, BCW21 | p-n-p low level, low 2N4058 2TX341, BSV28 n-p-n nixie drivers nBise ZTX342, BSV29 P ZTX531, BCW23 | p-n-p low level, low 2N2604 noise. (complementto | ZTX350 Single P-Channel MNOS _ 2N929) SILICON TRANSISTORS Power (n-p-n} Maximum Ratings Characteristics VCBO VcEO(sus) le Dissipation hee R(sat) fy Type Watts (max.) Typical No. Jedec Outline Outline Drawing Case Temp. Vce| atle atle volts volts amps | 25C , 100C | min.| max. | volts) amps |} ohms | amps | MHz Comments *ZT1479 60 40 1-5 5 2-9 | 20 60 4/ 0-2 7 0-2 1-5 TO-5 TIA *ZT1480 | 100 55 1-5 5 2-9 | 20 60 4] 0-2 7 0-2 1-5 TO-5 TIA Medium power types for *Z71481 60 40 1-5 5 2-9 | 36 | 100 4 | 0-2 7 0-2 1-5 TO-5 T7A switching applications *2T1482 | 100 55 1-5 5 2-9 | 35 | 100 4] 0-2 7 0-2 1-5 TO-5 TIA *2T1483 60 40 3-0 25 | 14 20 60 4 | 0-75 2-67 | 0-75 | 1-25 TO-8 T10 *2T1484 | 100 55 3-0 25 | 14 20 60 4] 0-75 2-67 | 0-75 | 1-25 TO-8 T10 *2ZT1485 60 40 3-0 25 | 14 35 | 100 4 | 0-75 1-0 0-75 | 1-25 TO-8 T10 High power switching *ZT1486 | 100 55 3-0 25 | 14 35 | 100 4 | 0-75 1-0 0.75 | 1-25 TO-8 T10 applications, pulse, *Z71487 60 40 6-0 75 | 43 15 45 411-5 2 1-5 1-0 TO-3 T9c audio or servo *ZT1488 | 100 55 6-0 75 | 43 15 45 4/1-5 2 1:5 1:0 TO-3 Tac amplifiers *ZT1489 60 40 6-0 75 | 43 25 75 4)1-5 0-67 | 1-5 1-0 TO-3 TOC *ZT1490 | 100 55 6-0 75 | 43 25 75 4/ 1-5 0-67 | 1-5 1-0 TO-3 T9C *ZT1700 | 60 40 1:0 5 2-8 | 20 80 4] 0-1 10 0-1 1-2 TO-5 T7A *ZT1701 60 40 2-5 25 | 14 20 80 4] 0-3 5 0-3 1-0 TO-8 T10 For low cost industrial systems *ZT1702 | 60 40 5-0 75 | 43 16 60 4] 0-8 4 0-8 1-0 TO-3 T9C Series/shunt Regulator, 2N3055 | 100 60 15 415 | 65 20 70 4/4 0:28 | 4 0-7% TO-3 T9C {Power switching 2N3441 | 160 140 3 25 | 10-6 | 20 80 4|05 1-0f | 0-5 0-65 TO-66 T9A Series/shunt Regulators, 2N3442 | 160 140 10 117 | 67 20 70 4| 3.0 1-0f | 3-0 0-8t TO-3 T9C eewelewitehing 2N3583 | 250 175 2-0 35 | 20 10} 10 | 1-0 10% TO-66 TIA High voltage, high 2N3584 | 375 250 2-0 35 | 20 25 | 100; 10 | 1-0 0-75t| 1-0 |10t TO-66 TSA speed switching and 2N3585 | 500 300 2:0 35 | 20 25 | 100 | 10 | 1-0 0-75+/ 1-0 [104 TO-66 T9A linear amplification TVCE(sat) tf atl=200mA *Also available as 2N1479 etc, Planar General PurposeSmall Signal (n-p-n} Maximum Ratings Characteristics Type | VeBo | Vceo |Veso| ic Prot MW VcE(sat) hee IcBo fr . No. (pk) Ic=10mA max. min. Jedec | Outline amb. temp. Vce=6V Outline | Drawing Max. | at Ic volts | volts | volts] mA 25C | 100C | volts | mA | min. max. pA MHz Comments BCY42 40 25 5 200 300 0-25 10 45 90 0-025] 100 TO-18 T2A on leakage current, BCY43 40 25 5 200 300 0.25 10 75 150 0-025; 100 TO-18 T2A low saturation voltage ZT20 20 20 6 50 350 140 0-5 10 18 42 0-5 70 TO-5 T7A 2721 20 20 6 50 350 140 0-5 10 38 82 0-5 70 TO-5 T7A ZT22 45 45 6 50 350 140 1-0 10 18 42 0-5 70 TO-5 T7A ZT23 45 45 6 50 350 140 1-0 10 38 82 0-5 70 TO-5 T7A ZT24 45 45 6 50 350 140 1-0 10 78 160 0-5 70 TO-5 T7A For amplifier and ZT40 20 20 6 50 300 120 0-5 10 18 42 0-5 70 TO-18 T2B switching applications ZT41 20 20 6 50 300 120 0-5 10 38 82 0-5 70 TO-18 T2B ZT42 45 45 6 50 300 120 1-0 10 18 42 0-5 70 TO-18 T2B ZT43 45 45 6 50 300 120 1-0 10 38 82 0-5 70 TO-18 T2B ZT44 45 45 6 50 300 120 1-0 10 78 160 0-5 70 TO-18 T2B ZT80 25 25 4 500 300 120 0-2 10 38 162 0-5 150 TO-18 T2B ZT81 45 35 4 500 300 120 0-2 10 38 162 0-5 150 TO-18 T2B ZT82 45 35 4 500 300 120 0-2 10 75 250 0-5 150 TO-18 T28 ZT83 60 45 5 500 300 170 0-2 50 38 85 0-05 160 TO-18 T2B ZT84 60 45 5 500 300 170 0-2 50 75 170 0-05 150 7 8 728 ZT86 100 80 5 500 300 170 0-2 50 38 85 0-05 150 TO-18 T2B 2187 25 | 26 | 4 | 500 | 300 | 120 |o2 | 10 | 75 | 250 | 0-5 150 | TO-18 | T2B |} Ow leakage current, ZT88 100 80 5 500 300 170 0-2 50 75 170 0-05 150 TO-18 T2B 8 ZT89 70 70 5 500 300 170 0-2 50 75 250 0-5 150 TO-18 T2B 27110 to SO-12C (TO46) versions of ZT80 to ZT89 JO-46 T1B 27119 2N929 45 45 5 30 300 150 1-0 10 40 120* 0-01 30 TO-18 T2A . 2N930 45 | 45 | 5 30 | 300 | 150 | 1-0 | 10 | 100*| 300*| 0-01 30 | TO-18 | T2a |\Lowievel, low noise 2N2484 60 60 6 50 360 _ 0-35 1-0 | 100* 500* 0-01 60 TO-18 T2A P *Ico=10uA VoeE=5V 22 MICRO-E CHARACTERISTICS AT 25C npn p-np MEDIUM CURRENT GENERAL PURPOSE TRANSISTORS BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 Units Parameter Test Conditions Min. | Max. | Min Max Min. | Max. Min. | Max. | Min Max. | Min. | Max. VoBO Rated Max. - 25 _ 45 60 25 _- 45 _ 45 Vv VcEO (sus) Ic=5mA, Igp=0 25 _ 35 45 25 35 45 _ Vv VeBO Rated Max. 5 _ 5 5 _ 5 5 _ 5 Vv tcBo Vcp=VcBo Rated Max, Ip=0 _ 0-5 _ C5 _ -05 _ 0-5 _ 0-5 _ -05 pA leno VeBo=5V, Ic=0 0-5 _ -05 _ -05 _ _ _ uA Vepo=4V, Ic=0 _ _ _ _ _ _ 0-5 - 0-05; 0:05 | pA hee I=100uA, Vep=6V 20 | 20 | _ hee ic=10mA, Vce=6V 50 300 100 300 40 120 50 300 100 300 40 120 hee Ico=50mA, Vce=6V _ _ 50 _ _ _ _ 50 _ _ _ VCE(sat) 1=50mA, igp=5mA _ 0-25 0-25 _ 0.25 _ 0.25 | Vv Ic=10mA, lp=1mA _ 0:35 _ _ _ 0:35 _ _ _ v VBE(sat) Ic =50mA, Ip=SmA _ 1-0 _ 1-0 _ _ _ 1:0 10/]V ic=10mA, Ip=1mA _ 1-0 _ _ _ _ 1-0 _ _ _ Vv fr \co=10mA, Vce=6V, f=100MHz 150 _ 150 _ 150 _ 150 _ 150 150 _ MHz Cob Vep=6V, le=0 5 _ 5 5 5 5 - 5 pF DEVICE TYPES and nearest metal can equivalents npn p-n-p LOW LEVEL AMPLIFICATION BFS36 2N930 BFS37 2N2605 BFS36A 2N929 BFS37A 2N2604 MEDIUM CURRENT BFS38A ZT80 BFS40A ZT180 BFS38 ZT82 BFS40 ZT182 BFS39 ZT83 BFS41 27183 MEDIUM POWER BFS42 2N2221 BFS44 2N2906 BFS43 2N2222A BFS45 2N2907A HIGH-SPEED SWITCHES BSV35A 2N708 BSV37 2N2894 BSV35 2N2369 BSV36 2N2475 V.H.F. AMPLIFIERS BFS46 2N918 BFS46A HIGH-SPEED DIODES BAW63 1N914 BAW63A BAW63B PACKAGE PHYSICAL DATA HIGH SPEED SWITCHING DIODES Pin Connections 2LEAOS 238 78-00 c 2888 __ $ bs rop 8 F 134 Cc t EWP ie pt, lead' q situated in c c F centre . ommon iommon Single cathode anode s 1,3820,20 10 pair pair 1,426" 1 ep b 2,9520,13 37 po ee E B E B oseara B Base CCollector E- Emitter Dimensions in millimetres Ez * Actual size 42