DATA SH EET
Product specification
Supersedes data of 1996 Sep 17 1999 May 11
DISCRETE SEMICONDUCTORS
BAW56
High-speed double diode
b
ook, halfpage
M3D088
1999 May 11 2
Philips Semiconductors Product specification
High-speed double diode BAW56
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
•High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The BAW56 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 common anode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: A1p = made in Hong Kong; A1t = made in Malaysia.
handbook, 4 columns
21
3
MAM206
Top view
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −85 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current single diode loaded; note 1;
see Fig.2 −215 mA
double diode loaded; note 1;
see Fig.2 −125 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward
current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
1999 May 11 3
Philips Semiconductors Product specification
High-speed double diode BAW56
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF= 1 mA 715 mV
IF= 10 mA 855 mV
IF=50mA 1 V
I
F= 150 mA 1.25 V
IRreverse current see Fig.5
VR=25V 30 nA
V
R=75V 1 µA
V
R=25V; T
j= 150 °C30 µA
V
R
=75V; T
j= 150 °C50 µA
C
ddiode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
4ns
V
fr forward recovery voltage when switched from IF= 10 mA;
tr= 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
1999 May 11 4
Philips Semiconductors Product specification
High-speed double diode BAW56
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
1999 May 11 5
Philips Semiconductors Product specification
High-speed double diode BAW56
Fig.5 Reverse current as a function of junction
temperature.
105
104
10 200
0
MGA884
100 T ( C)
jo
IR
(nA)
103
102
75 V
25 V
typ
max
V = 75 V
R
typ
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
025
V
R
(V)
2.5
0
0.5
MBH191
1.0
1.5
2.0
5
Cd
(pF)
10 15 20
1999 May 11 6
Philips Semiconductors Product specification
High-speed double diode BAW56
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
1999 May 11 7
Philips Semiconductors Product specification
High-speed double diode BAW56
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 May 11 8
Philips Semiconductors Product specification
High-speed double diode BAW56
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 11 9
Philips Semiconductors Product specification
High-speed double diode BAW56
NOTES
1999 May 11 10
Philips Semiconductors Product specification
High-speed double diode BAW56
NOTES
1999 May 11 11
Philips Semiconductors Product specification
High-speed double diode BAW56
NOTES
© Philips Electronics N.V. SCA
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Internet: http://www.semiconductors.philips.com
1999 64
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Printed in The Netherlands 115002/00/03/pp12 Date of release: 1999 May 11 Document order number: 9397 750 05948
