TPCA8026
2008-06-26
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCA8026
Lithium-Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: RDS (ON) = 1.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| =100 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 45
Drain current Pulsed (Note 1) IDP 135
A
Drain power dissipation (Tc = 25℃) PD 45 W
Drain power dissipation (t = 10 s)
(Note 2a)
PD 2.8 W
Drain power dissipation (t = 10 s)
(Note 2b)
PD 1.6 W
Single-pulse avalanche energy
(Note 3) EAS 263 mJ
Avalanche current IAR 45 A
Repetitive avalanche energy
(Tc = 25℃) (Note 4) EAR 3.4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon revie wing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive de vice. Handle with care.
Unit: mm
8 5
1 4
0.6 ± 0.1
4.25 ± 0.2
0.8 ± 0.1 3.5 ± 0.2 1.1 ± 0.2 0.166 ± 0.05
0.95 ± 0.05
5.0 ± 0.2
S
S
0.05
A
0.595
0.4 ± 0.1
6.0 ± 0.3
5.0 ± 0.2
14
0.15 ± 0.05
8
5
1.27
A
0.05 M
JEDEC ⎯
JEITA ⎯
TOSHIBA 2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8 6
1 2 3
7 5
4
1,2,3: SORCE 4: GATE
5,6,7,8:DRAIN
TPCA8026
2008-06-26
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Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case
(Tc = 25℃) Rth (ch-c) 2.78 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, IAR = 45 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
∗
Part number TPCA
8026
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
∗ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
Lot No.
TPCA8026
2008-06-26
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA
Drain cutoff current IDSS V
DS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V
VGS = 4.5 V, ID = 23 A ⎯ 2.7 4.5
Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 23 A ⎯ 1.8 2.2
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 23 A 50 100 ⎯ S
Input capacitance Ciss ⎯ 4200 ⎯
Reverse transfer capacitance Crss ⎯ 1000 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 1400 ⎯
pF
Rise time tr ⎯ 15 ⎯
Turn-on time ton ⎯ 30 ⎯
Fall time tf ⎯ 36 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 111 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 113 ⎯
Gate-source charge 1 Qgs1 ⎯ 13 ⎯
Gate-drain (“miller”) charge Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 45 A
⎯ 42 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 135 A
Forward voltage (diode) VDSF I
DR = 45 A, VGS = 0 V ⎯ ⎯ −1.2 V
RL = 0.65Ω
VDD ≈ 15 V
0 V
VGS10 V
4.7 Ω
ID = 23A
VOUT
TPCA8026
2008-06-26
4
100100
4 5
VGS = 10 V
4.5
1
100
10
0.1 1 10
25
100
0.1 1 10
0.1
1
10
100
1000
23
ID = 45 A
12
0 2 4 6 8 10
0
0.08
0.16
0.24
0.32
0.4
Ta = −55°C
100
25
1 3 4 6
0
20
40
60
80
100
0 2 5
ID – VDS
0
20
40
60
80
100
3.4
VGS = 2.8 V
10
3.2
43.6
0123
3.8
8
5
6
4.5
3
3.6
VGS = 2.8 V
4
8
3
0 0.2 0.4 0.6 0.8 1
3.2
0
10
20
30
40
50
3.4
6
10
5 4.5
3.8
ID – VDS
ID – VGS VDS – VGS
|Yfs| – ID RDS (ON) – ID
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Forward transfer admittance
|Yfs| (S)
Drain−source voltage VDS (V)
Drain−source voltage VDS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate−source voltage VGS (V)
Drain current ID (A)
Gate
−
source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain−source ON-resistance
RDS (ON) (mΩ)
Ta = −55°C
TPCA8026
2008-06-26
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100 140 120 180160
80 160120
VDS
VGS
24
12
0 60
16
20
0
10
20
40
8
20 40
VDD = 6V
0
30
50
12
4
80
3
−80 −40 0 40
0
2
0.5
1
1.5
2.5
Ciss
Coss
Crss
1000
10
0.1 1 10 100
100
10 4.5 3
VGS = 0 V
1
0−0.2 −0.4 −0.6 −0.8
0.1
100
−1
1
10
1000
VGS = 4.5 V
ID = 12, 23, 45 A
0
2
4
6
−80 −40 0 40 80 120 160
VGS = 10 V
8
ID = 12, 23, 45 A
RDS (ON) – Ta
IDR – VDS
Vth – Ta
Common source
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common source
VDS = 10 V
ID = 1mA
Pulse test
Common source
ID = 40 A
Ta = 25°C
Pulse test
Ambient temperature Ta (°C)
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain
−
source voltage VDS (V)
Drain reverse current IDR (A)
Drain−source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Gate−source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain−source voltage VDS (V)
10000
TPCA8026
2008-06-26
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100
t = 10 ms *
1 ms *
0.1 1 10 100
0.1
1
1000
VDSS max
10
0.1
0.001 0.01 0.1 1 10 100 1000
1
10
100
1000
(2)
(1)
(3)
040 80 160120
40
0
10
20
30
50
ID max (continuous)
DC operation
Tc = 25 °C
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
rth − tw
Single pulse
Pulse width tw (s)
Drain−source voltage VDS (V)
Transient thermal impedance
r
th (°C/W)
Drain current ID (A)
Safe operating area
ID max (Pulse) *
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
Case temperature Tc (°C)
PD – Tc
Drain power dissipation PD (W)
(1)
(2)
0
0.5
1
1.5
2
0 40 80 160120
2.5
3
PD – Ta
Ambient temperature Ta (°C)
Drain power dissipation PD (W)
(1) Device mounted on a
g lass- epoxy board (a) (Note 2a)
(2) Device mounted on a
g lass- epoxy board (b) (Note 2b)
t = 10 s
TPCA8026
2008-06-26
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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