May 2005 / C
SEMICONDUCTOR
TAK CHEONG
®
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Parameter Value Units
Power Dissipation 500 mW
Storage Temperature Range -65 to +200 °C
Operating Junction Temperature +200 °C
Lead Temperature (1/16” from case for 10 seconds) +230 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 56 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type VZ
Min VZ
Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZX79C 2V0 1.88 2.12 5 100 1 600 150 1
TCBZX79C 2V2 2.08 2.33 5 100 1 600 150 1
TCBZX79C 2V4 2.28 2.56 5 100 1 600 100 1
TCBZX79C 2V7 2.51 2.89 5 100 1 600 75 1
TCBZX79C 3V0 2.8 3.2 5 95 1 600 50 1
TCBZX79C 3V3 3.1 3.5 5 95 1 600 25 1
TCBZX79C 3V6 3.4 3.8 5 90 1 600 15 1
TCBZX79C 3V9 3.7 4.1 5 90 1 600 10 1
TCBZX79C 4V3 4 4.6 5 90 1 600 5 1
TCBZX79C 4V7 4.4 5 5 80 1 500 3 2
TCBZX79C 5V1 4.8 5.4 5 60 1 480 2 2
TCBZX79C 5V6 5.2 6 5 40 1 400 1 2
TCBZX79C 6V2 5.8 6.6 5 10 1 150 3 4
TCBZX79C 6V8 6.4 7.2 5 15 1 80 2 4
TCBZX79C 7V5 7 7.9 5 15 1 80 1 5
TCBZX79C 8V2 7.7 8.7 5 15 1 80 0.7 5
TCBZX79C 9V1 8.5 9.6 5 15 1 100 0.5 6
TCBZX79C 10 9.4 10.6 5 20 1 150 0.2 7
TCBZX79C 11 10.4 11.6 5 20 1 150 0.1 8
TCBZX79C 12 11.4 12.7 5 25 1 150 0.1 8
TCBZX79C 13 12.4 14.1 5 30 1 170 0.1 8
TCBZX79C 15 13.8 15.6 5 30 1 200 0.05 10.5
TCBZX79C 16 15.3 17.1 5 40 1 200 0.05 11.2
TCBZX79C 18 16.8 19.1 5 45 1 225 0.05 12.6
Cathode Anode
ELECTRICAL SYMBOL
TCBZX79C 2V0 through TCBZX79C56 Series
L
79C
xxx
DEVICE MARKING DIAGRAM
L : Logo
Device Code : TCBZX79Cxxx
AXIAL LEAD
DO35