SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 Silicon Transistors 2N2711,2 The 2N2711 and 2N2712 are planar passivated NPN Silicon transistors specifically manufactured for radio and general purpose commercial applications. They are housed in an epoxy case and are intended to perform all small signal functions in a conventional AM radio. absolute maximum ratings: (25C) (unless otherwise specified) 2N2711 2N2712 Voltages Collector to Emitter Voxo 18 volts Emitter to Base Vero 5 volts Jollector to Base Voso 18 volts biMeNsioNs, Twin eoec a Current ties | Collector* (Steady State) Ic 100 mA sameeren IT 1a | ing plane. Between .250 and end of jead a . L 2268 Dissipation max. of 021 is held "288 Total Power (Free air @ 25C)** Py 200 mW seo SEATING Total Power (Free air @ 55C)** P 120 mW ALL DIMEN. IN INCHES AND ARE. _| MIN PLANE |.050 + 00S Temperature -4 | +|1002.008 Storage Tse 55 to +125 C 3 Leaps ee Operating T; +100 C nore 0 10 *Determined from power limitations due to saturation voltage at this current. i **Derate 2.67 mW/C increase in ambient temperature above 25C. electrical characteristics: (25C) (unless otherwise specified) 2N2711 2N2712 D-C CHARACTERISTICS Min, Typ. Max. Min. Typ. Max. Collector Cutoff Current (Voz = 18V) Toso 0.5 0.5 pA (Ves = 18V, Ts = 100C) Tczo 15 15 pA Emitter Cutoff Current (Vex = 5V) Leno 0.5 0.5 vA Forward Current Transfer Ratio (Von = 4.5V, Ic == 2 mA) hrs 30 90 15 22. SMALL SIGNAL CHARACTERISTICS Common Emitter (Vce = 5V, I = 2mA, f = 455 kHz) Forward Current Transfer Ratio: Output a.c. Short Circuited Nite 55 Z11 169 Z 42 Input Impedance: Output a.c. Short Circuited hie 1040 Z 10 2580 Z 41 ohms Reverse Voltage Transfer Ratio: Input a.c. Open Circuited Hire .027 279 .071 2 48 Output Admittance: Input a.c. Open Circuited oe 1610 Z 79 4770 Z 48 umhos Forward Transfer Admittance: Output a.c. Short Circuited Yre .053 20 .066 20 mho Input Admittance: Output a.c. Short Circuited Yie 9602 10 388 Z 41 zmho Reverse Transfer Admittance: Input a.c. Short Circuited Yre 26 290 28 290 umho Output Admittance: Input a.c. Short Circuited Joe 170 290 71 245 umho HIGH FREQUENCY CHARACTERISTICS Collector Capacitance (Vczs = 10V, In = 0, f = 1 MHz) Cobo 4.5 9 12 4.5 9 12 pF NOISE Noise Figure (Ic = 100 uA, Vow = 5V, f = 10 kHz, BW = 1 Hz, Re = 20002) N.F. 2.8 2.8 dB Signal to Noise Ratio in Typical RF Cirevit (1600 kHz, 12 V signal) S/N 22 22 dB NOISE VOLTAGE AND CURRENT vs. I: OPTIMUM SOURCE IMPEDANCE FOR LOW NOISE vs. I, 19,000 NOISE OPTIMUM SOURCE IMPEDANCE FOR LOW WOISE V8 I anztis,2n2vi2 Vcers Tees v5 Ig 2N3392, 2NS393, 2N3395 Vg BV Ty #288C (INFORMATION FROM 310 TRANSISTOR NOISE ANALYZER QUAN-TECH LABS, INC.) Ew Iw 0.01 2 Ty X10 aups//= Eq x 10 voLts/ = loo UINFORMATION FROM MODEL BIO TRANSISTOR NOISE OPTIMUM SOURCE IMPEDANCE IM OHMS LABS, INC) e001 ool on ' 2 a 628 IgiN mA loo 341 Te ak 2N2646, 7 TYPE 2N2711, TYPE 2N2712 hye vas. Io 24 he vs. Io hte VS Te 2N2711 20 Veet 5 Tar 25C 16 La hye VS Te 1 22 an2712 ~~ 2 VoatS ca": hy AT 20H2 Ty25"C hy, AT 2OMHE e a ZL hhyg AT 40MH: LETT LT | ta AT 40Hz LA CC jo] jo oe [| | | [pe [nnn] 1 1 i) iso Te INmA oO t 2 4 6 8 10 100 Ig iN mA hee or hrg vs. Io hee or hye vs. lo 70 A 280 | | Mn LE | | | Ate IKHe hte! Kay] Ke 240 Dee 45SKHr: a | hee hee VS Tc i i, Ly \) | ane7u tte EMH: LAL tre bre VS Ic Vee SV 200 2ne7i2 Yi Nts VS Te Vee "SV Vee *8 4 hte VS Te fenmaz / Ve *5 . 4S5KC w 160 #2 1KHr = Iz z= Tat 25C = Tht 28C / 5 F 0 | 14 = 0 A Le | Lt : a | et 80 a ay bee |. 47 lo 10 be 40 0.01 oO. 1 2 4 6 600 100 0.01 ot ( 2 4 6 610 100 Te mA Ie INmA TYPE 2N2711,2N2712 Jono vs. TEMPERATURE 200 Cup vs. Vor Tceg VS TEMPERATURE 2N2711,2N2712 Vor (SAT) VS. le e Veg = 18V | | in ob VS Vou 2N27I 2Ne7I2 {SILICON EPOXY NPN) Ty ~ Tat 25re Yeecasty V8 Te = J tetMHe @N27IL, 2N2TIZ 3 < Teflyero < Tas88C 2 z 2. Zz. Qa a ra be 8 Z gt 38 Zz ue 10 5 o 5 S = IN 3 \ MN s S 8 2 & F _] 4 2 a 8 6 ~ v 0 a 20 49 60 BO 100 0 2 0 40 30 o ao 0 Vou IN VOLTS TEMPERATURE IN C Te ma 342 COLLECTOR POSITIVE WITH RESPECT TO BASE