2N2857
2N3839
NPN SILICON RF TRANSISTORS DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839
are silicon NPN RF transistors designed for VHF/UHF
amplifier, oscillator and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 2.5 V
Continuous Collector Current IC 40 mA
Power Dissipation PD 200 mW
Power Dissipation (TC=25°C) PD 300 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2857 2N3839
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=15V - 10 - 10 nA
ICBO V
CB=15V, TA=150°C - 1.0 - 1.0 μA
BVCBO I
C=1.0μA 30 - 30 - V
BVCEO I
C=3.0mA 15 - 15 - V
BVEBO I
E=10μA 2.5 - 2.5 - V
hFE V
CE=1.0V, IC=3.0mA 30 150 30 150
fT V
CE=6.0V, IC=5.0mA, f=100MHz 1.0 1.9 1.0 2.0 GHz
Cob V
CB=10V, IE=0, f=100kHz to 1.0MHz - 1.0 - 1.0 pF
Po V
CB=10V, IC=12mA, f=500MHz 30 - 30 - mW
Gpe V
CE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω 12.5 19 12.5 19 dB
NF VCE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω - 4.5 - 3.9 dB
rb’Cc V
CB=6.0V, IC=2.0mA, f=31.9MHz 4.0 15 1.0 15 ps
R1 (31-January 2013)
www.centralsemi.com