SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES *High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. *Low Collector-Emitter Saturation Voltage. *Complementary to TIP117. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 2 Pulse ICP 4 Base Current DC IB 50 Collector Power Ta=25 Dissipation Tc=25 Collector Current A 2 PC Junction Temperature Storage Temperature Range mA W 50 EQUIVALENT CIRCUIT Tj 150 Tstg -65150 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. ICEO VCE=50V, IB=0 - - 2 ICBO VCB=100V, IE=0 - - 1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 VCE=4V, IC=1A 1000 - - DC Current Gain hFE VCE=4V, IC=2A 500 - - Collector Cut-off Current UNIT mA mA Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.5 V Base-Emitter On Voltage VBE(ON) VCE=4V, IC=2A - - 2.8 V VCB=10V, IE=0, f=0.1MHz - - 100 pF Collector Output Capacitance 1999. 11. 16 Revision No : 1 Cob 1/2 TIP112 1999. 11. 16 Revision No : 1 2/2