BC858BW / BC858B
Transistors
Rev.A 1/4
PNP General Purpose Transistor
BC858BW / BC858B
zFeatures
1) BV
CEO
< -30V (I
C
=-1mA)
2) Complements the BC848B / BC848BW.
zPackage, marking and packaging specifications
Paet No.
Pakaging type
Marking
BC858BW
UMT3
G3K
T106
3000
BC858B
SST3
G3K
T116
3000
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
−30
−30
−5
−0.1
0.35
150
−65 to +150
Unit
V
V
V
A
Collector power dissipation P
C
0.2
˚C
˚C
∗
W
∗When mounted on 7 × 5 × 0.6 mm ceramic board.
zExternal dimensions (Unit : mm)
BC858BW
BC858B
00.1
(2)(1)
(3)
0.1~0.4
2.1
±
0.1
1.2
±
0.1
0.9±0.1
0.2 0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
0
-
All terminals have same dimensions
0
~
0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+0.2
- 0.1
−0.1
+0.2
+0.1
−0.06
+0.1
−0.05
(2)
(1)
(3)
All terminals have same dimensions
ROHM : UMT3
EIAJ : EC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BV
CBO
BV
CEO
BV
EBO
I
CBO
−30
−30
−5
−
−
−
−
−
−−
−
−
−
4
−100
V
V
V
nA
µA
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −30V, Ta=150°C
V
CB
= −30V
−
Base-emitter saturation voltage V
BE(on)
−0.6 −−0.75 V
−−−0.65 V I
C
/I
B
= −100mA/−5mA
Collector-emitter saturation voltage V
CE(sat)
−−−0.3 V I
C
/I
B
= −10mA/−0.5mA
V
CE
/I
C
= −5V/−10mA
V
CE
/I
C
= −5V/−2mADC current transfer ratio h
FE
210 −480 −
Output capacitance f
T
Cob
−
−
250
4.5
−
−
MHz
pF V
CE
= −5V , I
E
=20mA , f=100MHz
V
CB
= −10V , I
E
=0 , f=1MHz
Transition frequency
zElectrical characteristics curves
0
80
60
40
20
100
2
.0
01.0
I
B
=0mA
0.1
0.3
0.2
0.4
0.5
0.6
0.7
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter output
characteristics ( I )
0
8.0
6.0
4.0
2.0
10.0
2
.0
01.0
Ta=25˚C
1
B
=0µA
5
10
15
20
25
30
35
40
45
50
COLLECTOR CURRENT : IC
(mA)
COLLECTOR-EMITTER VOLTAGE : VCE
(
V
)
Fig.2 Grounded emitter output
characteristics ( II )
BC858BW / BC858B
Transistors
Rev.A 2/4
0.1 101.0 100 100
0
100
10
500
5
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC(mA)
Fig.3 DC current gain vs. collector current ( I )
Ta=25˚C
V
CE
=10V
1V
5V
0.1 101.0 100 100
0
100
10
500
5
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector current ( II )
VCE=5V
Ta=125˚C
Ta=25˚C
Ta=-55˚C
0.01 1.00.1 10 10
0
100
10
500
5
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 AC current gain vs. collector current
Ta=25˚C
V
CE
=5V
f=1kHz
BC858BW / BC858B
Transistors
Rev.A 3/4
0.1 1.0 10 10
0
0.3
0.2
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25˚C
I
C
/
I
B
=10
0.1 1.0 10 10
0
0.8
0.6
1.2
1.0
1.8
1.6
1.4
0.4
0.2
0
BASE EMITTER SATURATION VOLTAGE : VBE(sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
Ta=25
˚C
I
C
/
I
B
=10
0.1 1.0 10 10
0
0.8
1.2
1.8
1.6
0.4
0.6
1.0
1.4
0.2
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : IC(mA)
Fig.8 Grounded emitter propagatio
n
characteristics
Ta=25˚C
VCE=10V
1.0 10 10
100
1000
10
TURN ON TIME : ton(ns)
COLLECTOR CURRENT : IC(mA)
Fig.9 Turn-on time vs. collector curre
Ta=25˚C
IC / IB=10
V
CC
=3V
40V
15V
1.0 10 10
0
100
1000
10
RISE TIME : t
r
(ns)
COLLECTOR CURRENT : I
C
(mA)
Fig.10 Rise time vs. collector curren
t
Ta=25˚C
V
CC
=40V
I
C
/
I
B
=10
Ta=25˚C
I
C
=10I
B1
=10I
B2
1.0 10 10
0
100
1000
10
STORAGE TIME : tS(ns)
COLLECTOR CURRENT : I
C
(mA)
Fig.11 Storage time vs. collector curren
t
V
CE
=3V
40V
15V
Ta=25˚C
V
CC
=40V
I
C
=10I
B1
=10I
B2
1.0 10 10
0
100
1000
10
FALL TIME : tf(ns)
COLLECTOR CURRENT : IC(mA)
Fig.12 Fall time vs. collector curren
t
Ta=25˚C
f=1MHz
0.5 1105
Ta=25˚C
0.5 101 100 50
0
1.0
10
50
0.5
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : IC(mA)
Fig.14 Gain bandwidth product
300MHz
300MHz
200MHz
200MHz
100MHz
100MHz
0
10
100
1
CAPACITANCE (
pF)
REVERSE BIAS VOLTAGE(V)
Fig.13 Input/output capacitance
vs. voltage
Cib
Cob
BC858BW / BC858B
Transistors
Rev.A 4/4
Ta=25˚C
V
CE
=5V
0.5 1 10 100 50
0
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT : fT(MHz)
COLLECTOR CURRENT : I
C
(mA)
Fig.15 Gain bandwidth product
vs. collector current
Ta=25°C
V
CE
=6V
f=270Hz
I
C
=1mA
hie=8.75kΩ
hfe=270
hre=6.25×10-
5
hoe=17.7µS
0.1 11010
0
10
1
100
0.1
h-PARAMETERS NORMALIZED TO 1mA
COLLECTOR CURRENT : I
C
(mA)
Fig.16 h parameter vs.
collector current
hfe
hoe
hoe
hie
hre hre
V
CB
=30V
07525 50 100 125 15
0
100p
10p
1p
10n
1n
0.1p
COLLECTOR CUTOFF CURRENT : I
CBO
(A
)
AMBIENT TEMPERATURE : Ta(°C)
Fig.17 Noise characteristics ( I )
Ta=25˚C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
10 1k100 10k 100
k
5
10
9
8
7
6
4
3
2
1
0
NOISE FIGURE : NF
(dB)
FREQUENCY : f(Hz)
Fig.18 Noise vs. collector curren
t
Ta=25˚C
V
CE
=5V
f=10Hz
0.01 0.1 1 1
0
10k
1k
100k
100
SOURCE RESISTANCE : RS(Ω)
COLLECTOR CURRENT : I
C
(mA)
Fig.19
Noise characteristics ( II
)
12dB
8dB
3dB
5dB
NF=1dB
Ta=25˚C
V
CE
=5V
f=30Hz
0.01 0.1 1 1
0
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(Ω)
COLLECTOR CURRENT : I
C
(mA)
Fig.20
Noise characteristics ( III
)
12dB
8dB
3dB
5dB
NF=1dB
Ta=25˚C
VCE=5V
f=1kHz
0.01 0.1 1 1
0
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(Ω)
COLLECTOR CURRENT : I
C
(mA)
Fig.21
Noise characteristics ( IV
)
12dB
8dB
3dB
5dB
NF=1dB
Ta=25˚C
V
CE
=5V
f=10kHz
0.01 0.1 1 1
0
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(Ω)
COLLECTOR CURRENT : I
C
(mA)
Fig. 22
Noise characteristics ( V
)
1dB
8dB
3dB
5dB
NF=12dB
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.