DS26LS31CMXNOPB - TEXAS INSTRUMENTS

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA and LTE base station applications with frequencies

from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

cellular base station modulation formats.

!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I

DQ =

700 mA, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

Gps

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz 17.9 33.0 6.4 --38.7

2140 MHz 18.1 33.0 6.4 --38.2

2170 MHz 18.3 33.4 6.3 --37.2

!Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW (1)

Output Power (3 dB Input Overdrive from Rated Pout)

!Typical Pout @ 1 dB Compression Point ≃100 Watts CW

Features

!100% PAR Tested for Guaranteed Output Power Capability

!Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

!Internally Matched for Ease of Use

!Integrated ESD Protection

!Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

!Designed for Digital Predistortion Error Correction Systems

!Optimized for Doherty Applications

!RoHS Compliant

!In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 14.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage VDSS --0.5, +65 Vdc

Gate--Source Voltage VGS --6.0, +10 Vdc

Operating Voltage VDD 32, +0 Vdc

Storage Temperature Range Tstg --65 to +150 #C

Case Operating Temperature TC150 #C

Operating Junction Temperature (2,3) TJ225 #C

CW Operation @ TC=25#C

Derate above 25#C

CW 108

0.57

W/#C

Table 2. Thermal Characteristics

Characteristic Symbol Value (3,4) Unit

Thermal Resistance, Junction to Case

Case Temperature 77#C, 24 W CW, 28 Vdc, IDQ = 700 mA, 2140 MHz

Case Temperature 80#C, 100 W CW(1),28Vdc,I

DQ = 700 mA, 2140 MHz

R$JC

0.48

0.45

#C/W

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF8S21100H

Rev. 1, 3/2011

Freescale Semiconductor

Technical Data

2110--2170 MHz, 24 W AVG., 28 V

W--CDMA, LTE

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF8S21100HR3

MRF8S21100HSR3

CASE 465A--06, STYLE 1

NI--780S

MRF8S21100HSR3

CASE 465--06, STYLE 1

NI--780

MRF8S21100HR3

%Freescale Semiconductor, Inc., 2010--2011.

ll rights reserved.

RF Device Data

Freescale Semiconductor

MRF8S21100HR3 MRF8S21100HSR3

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22--A114) 2 (Minimum)

Machine Model (per EIA/JESD22--A115) A (Minimum)

Charge Device Model (per JESD22--C101) IV (Minimum)

Table 4. Electrical Characteristics (TA=25#C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65Vdc,V

GS =0Vdc)

IDSS — — 10 &Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28Vdc,V

GS =0Vdc)

IDSS — — 1 &Adc

Gate--Source Leakage Current

(VGS =5Vdc,V

DS =0Vdc)

IGSS — — 1 &Adc

On Characteristics

Gate Threshold Voltage

(VDS =10Vdc,I

D= 150 &Adc)

VGS(th) 1.2 2.0 2.7 Vdc

Gate Quiescent Voltage

(VDS =28Vdc,I

D= 700 mAdc)

VGS(Q) —2.7 —Vdc

Fixture Gate Quiescent Voltage (1)

(VDD =28Vdc,I

D= 700 mAdc, Measured in Functional Test)

VGG(Q) 4.0 5.4 7.0 Vdc

Drain--Source On--Voltage

(VGS =10Vdc,I

D=1.5Adc)

VDS(on) 0.1 0.24 0.3 Vdc

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I

DQ = 700 mA, Pout = 24 W Avg., f = 2170 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ '5MHzOffset.

Power Gain Gps 17.2 18.3 20.2 dB

Drain Efficiency "D31.0 33.4 — %

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.9 6.3 —dB

Adjacent Channel Power Ratio ACPR —--37.2 --36.0 dBc

Input Return Loss IRL — -- 1 2 -- 7 dB

Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I

DQ = 700 mA, Pout =24WAvg.,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ '5MHzOffset.

Frequency

Gps

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

2110 MHz 17.9 33.0 6.4 --38.7 -- 1 8

2140 MHz 18.1 33.0 6.4 --38.2 -- 1 6

2170 MHz 18.3 33.4 6.3 --37.2 -- 1 2

1. VGG =2xV

GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally matched both on input and output.

(continued)

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

Table 4. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I

DQ = 700 mA, 2110--2170 MHz Bandwidth

Pout @ 1 dB Compression Point, CW P1dB —100 — W

IMD Symmetry @ 36 W PEP, Pout where IMD Third Order

Intermodulation 30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

IMDsym

—40 —

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres —50 —MHz

Gain Flatness in 60 MHz Bandwidth @ Pout =24WAvg. GF—0.4 —dB

Gain Variation over Temperature

(--30#Cto+80#C)

(G — 0.011 —dB/#C

Output Power Variation over Temperature

(--30#Cto+80#C) (1)

(P1dB —0.005 —dB/#C

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

RF Device Data

Freescale Semiconductor

MRF8S21100HR3 MRF8S21100HSR3

MRF8S21100H

Rev 0

CUT OUT AREA

C1 C2

C10

C12

VGG VDD

C11

C6 C9

C13

Figure 1. MRF8S21100HR3(HSR3) Test Circuit Component Layout

Table 5. MRF8S21100HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C3, C6, C7 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC

C2 1.6 pF Chip Capacitor ATC100B1R6BT500XT ATC

C4 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC

C5, C8, C9, C10, C11 10 &F, 50 V Tantalum Capacitors 293D106X9050E2TE3 Vishay

C12 220 &F, 50 V Electrolytic Capacitor, Radial 227CKS050M Illinois Capacitor

C13 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC

R1, R2 2K), 1/4 W Chip Resistors CRCW12062K00FKEA Vishay

R3 10 ), 1/4 W Chip Resistor CRCW120610R0JNEA Vishay

PCB 0.030*,+r=2.55 AD255A Arlon

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

IRL, INPUT RETURN LOSS (dB)

2060

IRL

Gps

ACPR

f, FREQUENCY (MHz)

Figure 2. Output Peak--to--Average Ratio Compression (PARC)

Broadband Performance @ Pout = 24 Watts Avg.

--17.5

-- 7 . 5

-- 1 0

--12.5

-- 1 5

19.5

-- 3 9

34.5

33.5

-- 3 4

-- 3 5

-- 3 6

-- 3 7

"D, DRAIN

EFFICIENCY (%)

18.5

17.5

16.5

15.5

2080 2100 2120 2140 2160 2180 2200 2220

32.5

-- 3 8

-- 2 0

PARC

PARC (dB)

-- 1 . 8

-- 1

-- 1 . 2

-- 1 . 4

-- 1 . 6

-- 2

ACPR (dBc)

VDD =28Vdc,P

out =24W(Avg.),I

DQ = 700 mA

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Figure 3. Intermodulation Distortion Products

versus Two--Tone Spacing

TWO--TONE SPACING (MHz)

-- 6 0

-- 1 0

-- 2 0

-- 3 0

-- 5 0

1 100

IMD, INTERMODULATION DISTORTION (dBc)

-- 4 0

IM3--U

IM3--L

IM5--U

IM5--L

IM7--L

IM7--U

VDD =28Vdc,P

out = 36 W (PEP), IDQ = 700 mA

Two--Tone Measurements

(f1 + f2)/2 = Center Frequency of 2140 MHz

Figure 4. Output Peak--to--Average Ratio

Compression (PARC) versus Output Power

Pout, OUTPUT POWER (WATTS)

-- 1

-- 3

-- 5

-- 2

-- 4

OUTPUT COMPRESSION AT 0.01%

PROBABILITY ON CCDF (dB)

10 30 40 60

"D,DRAIN EFFICIENCY (%)

-- 1 d B = 2 2 W

-- 2 d B = 3 0 W

-- 3 d B = 4 0 W

VDD =28Vdc,I

DQ = 700 mA, f = 2140 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

ACPR

PARC

ACPR (dBc)

-- 5 0

-- 2 0

-- 2 5

-- 3 0

-- 4 0

-- 3 5

-- 4 5

Gps, POWER GAIN (dB)

18.5

17.5

16.5

Gps

Input Signal PAR = 7.5 dB

@ 0.01% Probability on CCDF

Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF

Gps, POWER GAIN (dB)

RF Device Data

Freescale Semiconductor

MRF8S21100HR3 MRF8S21100HSR3

TYPICAL CHARACTERISTICS

Gps ACPR

Pout, OUTPUT POWER (WATTS) AVG.

Figure 5. Single--Carrier W--CDMA Power Gain, Drain

Efficiency and ACPR versus Output Power

-- 1 0

-- 2 0

"D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

10 100 200

-- 6 0

ACPR (dBc)

-- 3 0

-- 4 0

-- 5 0

Figure 6. Broadband Frequency Response

1800

f, FREQUENCY (MHz)

1900

GAIN (dB)

Gain

2000 2100 2200 2300 2400 2500 2600

IRL

-- 2 0

-- 5

-- 1 0

IRL (dB)

4--15

2170 MHz

2140 MHz

2110 MHz

2140 MHz

2170 MHz

VDD =28Vdc,I

DQ = 700 mA, Single--Carrier

W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF

VDD =28Vdc

Pin =0dBm

IDQ = 700 mA

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

W--CDMA TEST SIGNAL

0.0001

100

PEAK--TO--AVERAGE (dB)

Figure 7. CCDF W--CDMA IQ Magnitude

Clipping, Single--Carrier Test Signal

0.1

0.01

0.001

24 68

PROBABILITY (%)

W--CDMA. ACPR Measured in 3.84 MHz

Channel Bandwidth @ '5MHzOffset.

Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF

Input Signal

-- 6 0

--100

(dB)

-- 2 0

-- 3 0

-- 4 0

-- 5 0

-- 7 0

-- 8 0

-- 9 0

3.84 MHz

Channel BW

7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9

f, FREQUENCY (MHz)

Figure 8. Single--Carrier W--CDMA Spectrum

-- 7 . 2

--ACPR in 3.84 MHz

Integrated BW

+ACPRin3.84MHz

Integrated BW

-- 1 0

13579

RF Device Data

Freescale Semiconductor

MRF8S21100HR3 MRF8S21100HSR3

VDD =28Vdc,I

DQ = 700 mA,Pout =24WAvg.

MHz

Zsource

)

Zload

)

2060 4.41 -- j6.05 3.03 -- j3.64

2080 4.38 -- j5.67 2.96 -- j3.45

2100 4.33 -- j5.29 2.89 -- j3.26

2120 4.33 -- j4.91 2.83 -- j3.10

2140 4.33 -- j4.54 2.75 -- j2.94

2160 4.33 -- j4.17 2.69 -- j2.75

2180 4.31 -- j3.80 2.62 -- j2.50

2200 4.32 -- j3.39 2.65 -- j2.24

2220 4.35 -- j2.99 2.67 -- j2.04

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Figure 9. Series Equivalent Source and Load Impedance

Zsource Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS

Pin, INPUT POWER (dBm)

VDD =28

dc, IDQ = 700 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle

Pout, OUTPUT POWER (dBm)

NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

3230 382928

Ideal

Actual

31 35 36 37

2170 MHz

2110 MHz

2140 MHz

2170 MHz

2110 MHz

2140 MHz

(MHz)

P1dB P3dB

Watts dBm Watts dBm

2110 141 51.5 166 52.2

2140 141 51.5 162 52.1

2170 138 51.4 158 52.0

Test Impedances per Compression Level

(MHz)

Zsource

)

Zload

)

2110 P1dB 3.50 -- j7.47 1.65 -- j3.64

2140 P1dB 4.21 -- j7.53 1.57 -- j3.70

2170 P1dB 6.39 -- j8.09 1.66 -- j3.68

Figure 10. Pulsed CW Output Power

versus Input Power @ 28 V

RF Device Data

Freescale Semiconductor

MRF8S21100HR3 MRF8S21100HSR3

PACKAGE DIMENSIONS

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MRF8S21100HR3 MRF8S21100HSR3

PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following documents, tools and software to aid your design process.

Application Notes

!AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

!EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

!Electromigration MTTF Calculator

!RF High Power Model

!.s2p File

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &

Tools tab on the part’s Product Summary page to download the respective tool.

R5 TAPE AND REEL OPTION

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

The R5 tape and reel option for MRF8S21100H and MRF8S21100HS parts will be available for 2 years after release of

MRF8S21100H and MRF8S21100HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be

delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5

tape and reel option will be offered MRF8S21100H and MRF8S21100HS in the R3 tape and reel option.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0Oct. 2010 !Initial Release of Data Sheet

1Mar. 2011 !Corrected VGG(Q) VDD value from 30 Vdc to 28 Vdc in On Characteristics table to reflect actual test

measurement condition, p. 2

MRF8S21100HR3 MRF8S21100HSR3

RF Device Data

Freescale Semiconductor

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Document Number: MRF8S21100H

Rev. 1, 3/2011