NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuit
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6V
Continuous Collector Current IC500 mA
Power Dissipation at Tamb
=25°C Ptot 680 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300 V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300 V IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 6V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO 0.1 µAVCB
=200V, IE=0
Emitter Cut-Off Current IEBO 0.1 µAVEB
=6V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5 V IC=20mA, IB=2mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 V IC=20mA, IB=2mA*
Static Forward Current
Transfer Ratio
hFE 25
40
40
IC=1mA, VCE
=10V*
IC=10mA, VCE
=10V*
IC=30mA, VCE
=10V*
Transition
Frequency
fT50 MHz IC=10mA, VCE
=20V
f=20MHz
Output Capacitance Cobo 6pFV
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
MPSA42
3-78
C
B
E
V
CE
(sat) Collector-Emitter Saturation Voltage(Volts)
Safe operating area
TYPICAL CHARACTERISTICS
0.1 10 100
1.0
60
0.1 10 100
1.0
0
40
80
20
100
120
0.001 100
10
0.01
1A
0.1
1000
1
100ms
10ms
1ms
D.C.
200
0.2
0.1
0.1 10 100
0.3
1.0 200
0
100
40
160
80
60
120
140
20
V
CE
=10V
140
V
CE
=20V
Single Pulse Test at T
amb
=25°C
V
CE(sat)
vs I
C
h
FE
vs I
C
f
T
vs I
C
I
C
-Collector Current Amps
V
CE
-Collector-Emitter Voltage (Volts)
I
C
-Collector Current (mA)
I
C
-Collector Current (mA) I
C
-Collector Current (mA)
h
FE
Static Forward Current Transfer Ratio
f
T
Transition Frequency (MHz)
I
C
/ I
B
=10
MPSA42
3-79
Not Recommended for New Design
Please Use ZTX457
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuit
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6V
Continuous Collector Current IC500 mA
Power Dissipation at Tamb
=25°C Ptot 680 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300 V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300 V IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 6V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO 0.1 µAVCB
=200V, IE=0
Emitter Cut-Off Current IEBO 0.1 µAVEB
=6V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5 V IC=20mA, IB=2mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 V IC=20mA, IB=2mA*
Static Forward Current
Transfer Ratio
hFE 25
40
40
IC=1mA, VCE
=10V*
IC=10mA, VCE
=10V*
IC=30mA, VCE
=10V*
Transition
Frequency
fT50 MHz IC=10mA, VCE
=20V
f=20MHz
Output Capacitance Cobo 6pFV
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
MPSA42
3-78
C
B
E
V
CE
(sat) Collector-Emitter Saturation Voltage(Volts)
Safe operating area
TYPICAL CHARACTERISTICS
0.1 10 100
1.0
60
0.1 10 100
1.0
0
40
80
20
100
120
0.001 100
10
0.01
1A
0.1
1000
1
100ms
10ms
1ms
D.C.
200
0.2
0.1
0.1 10 100
0.3
1.0 200
0
100
40
160
80
60
120
140
20
V
CE
=10V
140
V
CE
=20V
Single Pulse Test at T
amb
=25°C
V
CE(sat)
vs I
C
h
FE
vs I
C
f
T
vs I
C
I
C
-Collector Current Amps
V
CE
-Collector-Emitter Voltage (Volts)
I
C
-Collector Current (mA)
I
C
-Collector Current (mA) I
C
-Collector Current (mA)
h
FE
Static Forward Current Transfer Ratio
f
T
Transition Frequency (MHz)
I
C
/ I
B
=10
MPSA42
3-79
Not Recommended for New Design
Please Use ZTX457
