2N4234 - 2N4236 Available on commercial versions PNP Power Amplifier Silicon Transistor Qualified per MIL-PRF-19500/580 Qualified Levels: JAN, JANTX and JANTXV DESCRIPTION This family of 2N4234, 2N4235, and 2N4236 silicon transistors are military qualified up to the JANTXV level for high-reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N4234 and 2N4236 number * JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/580 * RoHS compliant version available TO-205AD (formerly TO-39) Package APPLICATIONS / BENEFITS * * * Short leaded TO-205AD package Lightweight package Military and other high-reliability applications MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol Junction & Storage Temperature Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient (1) Total Power Dissipation TJ , Tstg R JC R JA Collector - Emitter Voltage Collector - Base Voltage (1) @ TA = 25 C (2) @ TC = 25 C 2N4234 2N4235 2N4236 2N4234 2N4235 2N4236 Emitter - Base Voltage Base Current Collector Current PT V CEO V CBO V EBO IB IC Value Unit -65 to +200 29 175 1.0 6.0 -40 -60 -80 -40 -60 -80 -7.0 -0.5 -1.0 C C/W C/W Notes: 1. Derated linearly by 5.7 mW/C for T A > +25 C 2. Derated linearly by 34 mW/C for T C > +25 C W V V V A A MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0319, Rev. 1 (9/25/13) (c)2013 Microsemi Corporation Page 1 of 5 2N4234 - 2N4236 MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, steel base, nickel cap TERMINALS: Steel Leads, nickel plated, then solder dipped or RoHS compliant matte-tin available on commercial grade only MARKING: Part number, date code, manufacturer's ID and serial number POLARITY: PNP WEIGHT: Approximately 1.064 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N4234 (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant JEDEC type number Symbol IB IC IE TC V CB V CBO V CC V CE SYMBOLS & DEFINITIONS Definition Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Emitter current: The value of the dc current into the emitter terminal. Case temperature: The temperature measured at a specified location on the case of a device. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. V EB Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base V EBO Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. V CEO T4-LDS-0319, Rev. 1 (9/25/13) (c)2013 Microsemi Corporation Page 2 of 5 2N4234 - 2N4236 ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = -100 mA Collector-Emitter Cutoff Current V CB = -30 V V CB = -40 V V CB = -60 V Collector-Emitter Cutoff Current V CB = -40 V, V BE = -1.5 V V CB = -60 V, V BE = -1.5 V V CB = -80 V, V BE = -1.5 V Collector-Base Cutoff Current V CB = -40 V V CB = -60 V V CB = -80 V Emitter-Base Cutoff Current V BE = -7.0 V Symbol Min Max Unit 2N4234 2N4235 2N4236 V (BR)CEO -40 -60 -80 2N4234 2N4235 2N4236 I CEO -1.0 -1.0 -1.0 mA 2N4234 2N4235 2N4236 I CEX -100 -100 -100 nA 2N4234 2N4235 2N4236 I CBO -100 -100 -100 nA I EBO -0.5 mA V (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I C = -100 mA, V CE = -1.0 V I C = -250 mA, V CE = -1.0 V I C = -500 mA, V CE = -1.0 V Collector-Emitter Saturation Voltage I C = -1.0 A, I B = -100 mA I C = -500 mA, I B = -50 mA h FE Base-Emitter Saturation Voltage I C = -500 mA, I B = -50 mA I C = -1.0 A, I B = -100 mA DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = -100 mA, V CE = -10 V, f = 1 MHz Output Capacitance V CB = -10 V, I E = 0, f = 100 MHz T4-LDS-0319, Rev. 1 (9/25/13) (c)2013 Microsemi Corporation 40 30 20 150 V CE(sat) -0.6 -0.4 V V BE(sat) -1.1 -1.5 V |h FE | C obo 3.0 100 pF Page 3 of 5 2N4234 - 2N4236 ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted (continued) SAFE OPERATING AREA DC Tests T C = +25 C, 1 cycle, t 0.5 Test 1 V CE = -6.0 V, I C = -1.0 A Test 2 V CE = -12 V, I C = -500 mA Test 3 V CE = -30 V, I C = -166 mA V CE = -50 V, I C = -100 mA V CE = -70 V, I C = -71 mA s (2N4234) (2N4235) (2N4236) (3) Pulse Test: Pulse Width = 300 s, duty cycle 2.0% T4-LDS-0319, Rev. 1 (9/25/13) (c)2013 Microsemi Corporation Page 4 of 5 2N4234 - 2N4236 PACKAGE DIMENSIONS Ltr Dimensions Inch Millimeters Min Max Min Max Notes CD 0.305 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD 0.335 0.370 8.51 9.40 h 0.009 0.041 0.23 1.04 j 0.028 0.034 0.71 0.86 3 k 0.029 0.045 0.74 1.14 3, 4 LD 0.016 0.021 0.41 0.53 8, 9 LL 0.500 0.750 12.7 19.05 LC LU 0.200 TP 0.016 0.019 L1 - L2 0.250 P 0.100 Q - r 5.08 TP 7 0.41 0.48 8, 9 0.050 - 1.27 8, 9 - 6.35 - 8, 9 0.050 - 1.27 5 0.25 45 TP 10 7 0.010 45 TP 2.54 7 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Dimensions are in inches. Millimeters are given for information only. Beyond r (radius) maximum, TL shall be held for a minimum length of 0.011 inch (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 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