December 2005 / B http://takcheong.com
1
Licensed by ON Semiconductor,
A trademark of semiconductor
Components Industries, LLC for
Zener Technology and Products.
TAK CHEON
G
®
1 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
Maximum Ratings
Rating Symbol Value Units
Maximum Steady State Power Dissipation
@TL≤50℃, Lead Length = 3/8”
Derate Above 50℃
PD
1
6.67
W
mW/℃
Operating and Storage
Temperature Range TJ, Tstg -65 to +200 °C
Specification Features:
Zener Voltage Range = 3.3V to 100V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-41 Package (DO-204AL)
Double Slug Type Construction
Metallurgical Bonded Construction
Oxide Passivated Die
Specification Features:
Case : Double slug type, hermetically sealed glass
Finish : All external surfaces are corrosion resistant and leads are readily solderable
Polarity : Cathode indicated by polarity band
Mounting: Any
Maximum Lead Temperature for Soldering Purposes
230℃, 1/16” from the case for 10 seconds
Ordering Information
Device Package Quantity
1N47xxA Axial Lead 2000 Units / Box
1N47xxARL Axial Lead 6000 Units / Tape & Reel
1N47xxARL2* Axial Lead 6000 Units / Tape & Reel
1N47xxATA Axial Lead 4000 Units / Tape & Ammo
1N47xxATA2* Axial Lead 4000 Units / Tape & Ammo
* The “2” suffix refer to 26mm tape spacing.
1N4728A through 1N4764A Series
Cathode Anode
L = Logo
1N47xxA = Device Code
L
1N
47
xx
A
Devices listed in bold italic are Tak Cheong Preferred
devices. Preferred devices are recommended choices
for future use and best overall value.
1N4728A through 1N4764A Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless
otherwise noted. VF = 1.2 V Max @ IF = 200mA for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Zener Current
ZZT Maximum Zener Impedance @ IZT
IZk Reverse Zener Current
ZZk Maximum Zener Impedance @ IZk
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
IrSurge Current @ TA = 25ºC
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.2 V Max @ IF = 200mA for all types)
Zener Voltage (Note 3 & 4.) Zener Impedance (Note 5.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Ir
(Note 6.)
Device
(Note 2.) Device
Marking Min Nom Max (mA) (Ω
ΩΩ
Ω)(
Ω
ΩΩ
Ω)(mA) (µ
µµ
µA Max) (Volts) (mA)
1N4728A 1N4728A 3.135 3.3 3.465 76 10 400 1 100 1 1380
1N4729A 1N4729A 3.42 3.6 3.78 69 10 400 1 100 1 1260
1N4730A 1N4730A 3.705 3.9 4.095 64 9 400 1 50 1 1190
1N4731A 1N4731A 4.085 4.3 4.515 58 9 400 1 10 1 1070
1N4732A 1N4732A 4.465 4.7 4.935 53 8 500 1 10 1 970
1N4733A 1N4733A 4.845 5.1 5.355 49 7 550 1 10 1 890
1N4734A 1N4734A 5.32 5.6 5.88 45 5 600 1 10 2 810
1N4735A 1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 730
1N4736A 1N4736A 6.46 6.8 7.14 37 3.5 700 1 10 4 660
1N4737A 1N4737A 7.125 7.5 7.875 34 4 700 0.5 10 5 605
1N4738A 1N4738A 7.79 8.2 8.61 31 4.5 700 0.5 10 6 550
1N4739A 1N4739A 8.645 9.1 9.555 28 5 700 0.5 10 7 500
1N4740A 1N4740A 9.5 10 10.5 25 7 700 0.25 10 7.6 454
1N4741A 1N4741A 10.45 11 11.55 23 8 700 0.25 5 8.4 414
1N4742A 1N4742A 11.4 12 12.6 21 9 700 0.25 5 9.1 380
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a st andard tolerance on the nominal zener voltage of ±5%.
3. SPE CIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter vol tage tolerances. For detailed information on price,
availability and delivery, contact your nearest Tak Cheong representative.
4. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
5. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 cycle AC voltage, which resul ts when an AC current having an RMS value
equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK.
6. SURGE CURRENT (Ir) NON-REP ETITIVE
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of ½ square
wave or equivalent sine wave pulse of 1/120 second durat i on superimposed on the test current IZT per JEDEC registration;
however, act ual device capability is as described in figure 5 of the General Data DO-41 Glass.
1N4728A through 1N4764A Series
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ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.2 V Max @ IF = 200mA for all types)
Zener Voltage (Note 8 & 9.) Zener Impedance (Note 10.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Ir
(Note 11.)
Device
(Note 7.) Device
Marking Min Nom Max (mA) (Ω
ΩΩ
Ω)(
Ω
ΩΩ
Ω)(mA) (µ
µµ
µA Max) (Volts) (mA)
1N4743A 1N4743A 12.35 13 13.65 19 10 700 0.25 5 9.9 344
1N4744A 1N4744A 14.25 15 15.75 17 14 700 0.25 5 11.4 304
1N4745A 1N4745A 15.2 16 16.8 15.5 16 700 0.25 5 12.2 285
1N4746A 1N4746A 17.1 18 18.9 14 20 750 0.25 5 13.7 250
1N4747A 1N4747A 19 20 21 12.5 22 750 0.25 5 15.2 225
1N4748A 1N4748A 20.9 22 23.1 11.5 23 750 0.25 5 16.7 205
1N4749A 1N4749A 22.8 24 25.2 10.5 25 750 0.25 5 18.2 190
1N4750A 1N4750A 25.65 27 28.35 9.5 35 750 0.25 5 20.6 170
1N4751A 1N4751A 28.5 30 31.5 8.5 40 1000 0.25 5 22.8 150
1N4752A 1N4752A 31.35 33 34.65 7.5 45 1000 0.25 5 25.1 135
1N4753A 1N4753A 34.2 36 37.8 7 50 1000 0.25 5 27.4 125
1N4754A 1N4754A 37.05 39 40.95 6.5 60 1000 0.25 5 29.7 115
1N4755A 1N4755A 40.85 43 45.15 6 70 1500 0.25 5 32.7 110
1N4756A 1N4756A 44.65 47 49.35 5.5 80 1500 0.25 5 35.8 95
1N4757A 1N4757A 48.45 51 53.55 5 95 1500 0.25 5 38.8 90
1N4758A 1N4758A 53.2 56 58.8 4.5 110 2000 0.25 5 42.6 80
1N4759A 1N4759A 58.9 62 65.1 4 125 2000 0.25 5 47.1 70
1N4760A 1N4760A 64.6 68 71.4 3.7 150 2000 0.25 5 51.7 65
1N4761A 1N4761A 71.25 75 78.75 3.3 175 2000 0.25 5 56 60
1N4762A 1N4762A 77.9 82 86.1 3 200 3000 0.25 5 62.2 55
1N4763A 1N4763A 86.45 91 95.55 2.8 250 3000 0.25 5 69.2 50
1N4764A 1N4764A 95 100 105 2.5 350 3000 0.25 5 76 45
7. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The t ype num bers listed have a standard tolerance on the nominal zener voltage of ±5%.
8. SPECI ALS AVAIL ABLE IN CL UDE
Nominal zener voltages bet ween the voltages shown and tighter voltage toleranc es. For detailed inform ati on on price,
availability and delivery, contact your nearest Tak Cheong represent ative.
9. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
10. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 cycle AC voltage, which results when an AC current having an RMS value
equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK.
11. SURGE CURRENT (Ir) NON-REP ETITIVE
The rat i ng list ed i n the el ectric al c haract eris t ics table is maximum peak, non-repet itive, reverse surge current of ½ square
wave or equival ent sine wave pulse of 1/120 second duration superim posed on the test current IZT per JEDEC regist ration;
however, actual device capability is as desc ri bed in figure 5 of the General Data DO-41 Glass.
1N4728A through 1N4764A Series
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4
Figure 1. Power Temperature Derating Curve
TL, LEAD TEMPERATURE (°C)
0
0.25
0.5
0.75
1
1.25 L = LEAD LENGTH
TO HEAT SINK
L = 3/8"
L = 1/8"
L = 1"
PD, STEADY STATE POWER DISSIPATION (WATTS)
20 40 60 80 100 120 140 160 180 200
1N4728A through 1N4764A Series
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Figure 2. Temperature Coefficients
(-55 °C to +150 °C temperature range; 90% of the units are in the ranges indicated.)
a. Range for Units to 12 Volts b. Range for Units to 12 to 100 Volts
+12
+10
+8
+6
+4
+2
0
-2
-4
VZ, ZENER VOLTAGE (VOLTS)
θV
Z, TEMPERATURE COEFFICIENT (mV/ °C)
100
70
50
30
20
10
7
5
3
2
1
10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS)
θVZ, TEMPERATURE COEFFICIENT (mV/°C)
VZ @IZT
RANGE
RANGE V Z @IZT
Figure 3. Typical Thermal Resistance
versus Lead Length Figure 4. Effect of Zener Current
175
150
125
100
75
50
25
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
L, LEAD LENGTH TO HEAT SINK (INCHES)
θJL, JUNCTION-TO-LEAD THERMAL RESISTANCE (mV/ °C)
θVZ, TEMPERATURE COEFFICIENT (mV/ °C)
+6
+4
+2
0
-2
-4
VZ, ZENER VOLTAGE (VOLTS)
VZ @ I Z
TA
20 mA
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
Figure 5. Maximum Surge Power
100
70
50
30
20
10
7
5
3
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Ppk , PEAK SURGE POWER (WATTA)
11 V - 100 V NONREPETITIVE
3.3 V - 10 V NONREPETITIVE
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
RECT ANGULAR
WAVEFORM
TJ = 25°C PRIOR TO
INITIAL PULSE
23456789
10 11 12
345678
= 25 °C
1N4728A through 1N4764A Series
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VF , FORWARD VOLTAGE (VOLTS)
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
1000
500
200
100
50
20
10
5
2
1
IF, FOR WARD CURRENT (mA)
MAXIMUM
150 °C
75°C
0°C
25°C
Figure 6. Effect of Zener Current
on Zener Impedance Figure 7. Effect of Zener Voltage
on Zener Impedance
Figure 8. T ypical Leakage Current
1000
500
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
IZ, ZENER CURRENT (mA)
ZZ, DYNAMIC IMPEDANCE (OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
1 2 100
VZ, ZENER VOLTAGE (V)
35 710 2030 5070
ZZ, DYNAMIC IMPEDANCE (OHMS)
10000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
IR, LEAKAGE CURRENT (m A)
3 456 78 9101112131415
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
+25 °C
+125 °C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
TJ = 25 °C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
6.2 V
27 V
VZ = 2.7 V
47 V
TJ = 25 °C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
20 mA
5 mA
IZ = 1 mA
0 V BIAS
1 V BIAS
400
300
200
100
50
20
10
8
4
1 2 5 10 20 50 100
VZ, NOMINAL VZ (VOLTS)
C, CAP ACIT ANCE (pF)
50% OF BREAKDOWN BIAS
MINIMUM
Figure 9. T ypical Capacitance versus VZ
Figure 10. Typical Forward Characteristics
1N4728A through 1N4764A Series
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7
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends o n the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + ∆TJL.
∆TJL is the increase in junction temperature above the lead
temperature and may be found as follows:
∆TJL = θJLPD.
θJL may be determined from Figure 3 for dc power
conditions. For worst-case design, using expected limits of
IZ, limits of PD and the extremes of TJ(∆TJ) may be
estimated. Changes in voltage, VZ, can then be found from:
∆V = θVZ ∆TJ.
θVZ, the zener voltage temperature coefficient, is found
from Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 5. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 5 be exceeded.
