FQS4900TF - Fairchild Semiconductor

August 2000

Rev. A, August 2000

FQS4900

QFET

QFETQFET

QFETTM

FQS4900

Dual N & P-Channel, Logic Level MOSFET

General Description

These dual N and P-channel enhancement mode power

field effect transistors are produced using Fairchild’s

proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. This device is well

suited for high interface in telephone sets.

Features

• N-Channel 1.3A, 60V, RDS(on) = 0.55 Ω @ VGS = 10 V

RDS(on) = 0.65 Ω @ VGS = 5 V

P-Channel -0.3A, -300V, RDS(on) = 15.5 Ω @ VGS = -10 V

RDS(on) = 16 Ω @ VGS =- 5 V

• Low gate charge ( typical N-Channel 1.6 nC)

( typical P-Channel 3.6 nC)

• Fast switching

• Improved dv/dt capability

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Thermal Characteristi cs

Symbol Parameter N-Channel P-Channel Units

VDSS Drain-Source Voltage 60 -300 V

IDDrain Current - Continuous (TA = 25°C) 1.3 -0.3 A

- Continuous (TA = 70°C) 0.82 -0.19 A

IDM Drain Curent - Pulsed (Note 1) 5.2 -1.2 A

VGSS Gate-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt (Note 2) 7.0 4.5 V/ns

PDPower Dissipation (TA = 25°C) 2.0 W

(T A = 70°C) 1.3 W

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Symbol Parameter Typ Max Units

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

S1G1

D1D1D2

FQS4900

Rev. A, August 2000

Electrical Characteristics TA = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤2%

4. Essentially independent of operating temperature

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage

VGS = 0 V, ID = 250 µAN-Ch 60 -- -- V

VGS = 0 V, ID = -250 µAP-Ch -300 -- -- V

IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V N-Ch -- -- 1 µA

VDS = 48 V, TC = 55°C -- -- 10 µA

VDS = -300 V, VGS = 0 V P-Ch -- -- -1 µA

VDS = -240 V, TC = 55°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V All -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V All -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = 4V, ID = 20 mA N-Ch 1.0 -- 1.95 V

VDS = 4V, ID = -20 mA P-Ch -1.0 -- -1.95 V

RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.65 A N-Ch -- 0.39 0.55 Ω

VGS = 5 V, ID = 0.65 A -- 0.46 0.65 Ω

VGS = -10 V, ID = -0.15 A P-CH -- 11.2 15.5 Ω

VGS = -5 V, ID = -0.15 A -- 11.4 16 Ω

gFS Forward Transconductance VDS = 10 V, ID = 0.65 A N-CH -- 1.7 -- S

VDS = -10 V, ID = -0.15 A P-CH -- 0.6 -- S

Switching Characteristics

td(on) Turn-On Delay Time N-Channel

VDD = 30 V, ID = 1.3 A,

RG = 25 Ω

P-Channel

VDD = -150 V, ID = -0.3 A,

RG = 25 Ω

N-Ch -- 5.7 21 ns

P-Ch -- 10 30 ns

trTurn-On Rise Time N-Ch -- 21 50 ns

P-Ch -- 25 60 ns

td(off) Turn-Off De l a y Time N-Ch -- 11 32 ns

P-Ch -- 35 80 ns

tfTurn -Off Fall Time N-Ch -- 17 45 ns

P-Ch -- 47 105 ns

QgTotal Gate Ch arge N-Channel

VDS = 48 V, ID = 1.3 A,

VGS = 5 V

P-Channel

VDS = -240 V, ID = -0.3 A,

VGS = -5 V

N-Ch -- 1.6 2.1 nC

P-Ch -- 3.6 4.7 nC

Qgs Gate-Source Charge N-Ch -- 0.28 -- nC

P-Ch -- 0.42 -- nC

Qgd Gate-Drain Charge N-Ch -- 0.82 -- nC

P-Ch -- 2.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current N-Ch -- -- 1.3 A

P-Ch -- -- -0.3 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A N-Ch -- -- 1.5 V

VGS = 0 V, IS = -0.3 A P-Ch -- -- -4.0 V

FQS4900

Rev. A, August 2000

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS = 48V

VDS = 30V

! Note : ID = 1.3 A

VGS, Gate-Source Voltage [V]

QG, Total G a te Ch a rg e [nC]

10-1 100101

120

160

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

! Note s :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10-1

100

150"

! Notes :

1. VGS = 0V

2. 250#s P ulse Test

25"

IDR, Reverse Drain Current [A]

VSD, Sourc e-D r a i n volta g e [V ]

02468

0.0

0.5

1.0

1.5

2.0

VGS = 5V

VGS = 10V

! N ote : TJ = 25"

RDS(ON) [$],

Drain-Source On-Resistance

ID, Drain Current [A]

0246810

10-1

100

150"

25"

-55"

! No tes :

1. VDS = 25V

2. 250#s P ulse T es t

ID, Drain Cur re nt [A ]

VGS, Gate-Source Voltage [V]

10-1 100101

10-1

100

VGS

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

Bottom : 3.0 V

! Notes :

1. 250#s Pu lse Test

2. TC = 25"

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics : N-C hannel

Figure 5. C apacitance C haracterist i cs Figure 6. Gate Charge Chara ct eri stics

Figu re 3. On-R esistan ce Variat ion vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s

FQS4900

Rev. A, August 2000

10-4 10-3 10-2 10-1 100101102

10-1

100

101

0.01

! No te s :

1 . Z %JC(t) = 62.5 "/W M ax.

2 . Du ty F a c to r, D = t1/t2

3 . T JM - T C = PDM * Z %JC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

Z%JC

(t), Therm al R esponse

t1, Square W ave Pulse Duration [sec]

25 50 75 100 125 150

0.0

0.3

0.6

0.9

1.2

1.5

ID, Drain Current [A]

TC, Case Temperature ["

]

10-1 100101102

10-2

10-1

100

101

1 ms

100 ms

1 s

DC10 s

10 ms

Operation in This Area

is Limited by R DS(on)

! Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Dra in Current [A ]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

! Notes :

1. VGS = 10 V

2. ID = 0.65 A

RDS(ON) , (Norm alized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

! Notes :

1 . VGS = 0 V

2 . ID = 250 #A

BV DSS , (N ormaliz e d )

Drain-Sou rce Breakdow n V oltage

TJ, Junction Temperature [oC]

Typical Characteristics : N-Channel (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdo w n Vol ta g e Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Thermal Respons e Cur ve

PDM

FQS4900

Rev. A, August 2000

0123456

VDS = -150V

VDS = -60V

VDS = -240V

! Note : ID = -0.3 A

-VGS , G ate -S o u rce V o ltag e [V ]

QG, T otal Gate Char g e [nC ]

10-1 100101

100

150

200

250 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

! Notes :

1. VGS = 0 V

2. f = 1 M Hz

Crss

Coss

Ciss

Ca pac itance [pF]

VDS, Drain-Source Voltage [V]

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10-1

100

150"! No tes :

1. VGS = 0V

2. 250#s P ulse T es t

25"

-IDR , Reverse Drain Current [A]

-VSD , So u rc e-D rain Voltage [V ]

0.0 0.3 0.6 0.9 1.2 1.5

! N o te : TJ = 25"

VGS = - 5V

VGS = - 10V

RDS(on) [Ω],

Drain-Source On-Resistance

-ID , Drain C u r re n t [A]

0246810

10-1

100

150"

25"

-55"

! Notes :

1. VDS = -25V

2. 250#s P ulse Test

-ID , Drain Current [A]

-VGS , Gate-Source Voltage [V]

10-1 100101

10-2

10-1

100 VGS

Top : -10.0 V

-8.0 V

-6.0 V

-5.0 V

-4.5 V

-4.0 V

-3.5 V

Bo ttom : -3.0 V

! Notes :

1. 250#s Pulse Test

2. TC = 25"

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

Typical Characteristics : P-Channel (Continued)

Figure 5. C apacitance C haracterist i cs Figure 6. Gate Charge Chara ct eri stics

Figu re 3. On-R esistan ce Variat ion vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s

FQS4900

Rev. A, August 2000

25 50 75 100 125 150

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

-ID, Dra in Curren t [A]

TC, Case Temperature ["

]

100101102

10-3

10-2

10-1

100

101

1 m s

1 s

10 s

100 m s

10 m s

Operation in This Area

is Limited by R DS(on)

! Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

! Notes :

1. V GS = -10 V

2. ID = -0 .1 5 A

RDS(ON) , (Normalized)

Drain-Source O n-R esistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

! Notes :

1 . VGS = 0 V

2 . ID = -250 #A

-BV DSS , (N orm a liz e d)

Drain-Sou rce Breakdow n V oltage

TJ, Junction Temperature [oC]

10-4 10-3 10-2 10-1 100101102

10-1

100

101

0.01

! No te s :

1 . Z %JC(t) = 62.5 "/W M ax.

2 . Du ty F a c to r, D = t1/t2

3 . T JM - T C = PDM * Z %JC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

Z%JC

(t), Therm al R esponse

t1, Square W ave Pulse Duration [sec]

Typical Characteristics : P-Channel (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdo w n Vol ta g e Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Thermal Respons e Cur ve

PDM

FQS4900

Rev. A, August 2000

Charge

VGS

5V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

Charge

VGS

5V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

VDS RL

DUT

VGS

Gate Charge Test Circuit & Waveform

Resist iv e Sw itc h ing Tes t Ci rcuit & Waveforms

FQS4900

Rev. A, August 2000

Package Dimensions

4.92 ±0.20

0.194 ±0.008

0.41 ±0.10

0.016 ±0.004

1.27

0.050

5.72

0.225

1.55 ±0.20

0.061 ±0.008

0.1~0.25

0.004~0.001

6.00 ±0.30

0.236 ±0.012

3.95 ±0.20

0.156 ±0.008

0.50 ±0.20

0.020 ±0.008

5.13

0.202 MAX

#4 #5

0~8°

0.56

0.022

()

1.80

0.071

MAX0.10

MAX0.004

MAX

MIN

+0.10

-0.05

0.15+0.004

-0.002

0.006

8-SOP

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not intended to be an exhaustive list of all such trademarks.

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later dat e.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconduct or reserv es the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. A, January 2000